Method for producing glass article and glass-melting furnace
US-2020331789-A1 · Oct 22, 2020 · US
Semiconductor Device Manufacturing Method
US2017077396A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017077396-A1 |
| Application number | US-201615263942-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 13, 2016 |
| Priority date | Sep 16, 2015 |
| Publication date | Mar 16, 2017 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
There is provided a semiconductor device manufacturing method which includes: loading a substrate with a magnetic substance film formed thereon into a process container; regulating an internal pressure of the process container to a first pressure lower than an atmospheric pressure; regulating the internal pressure of the process container from the first pressure to a second pressure higher than the first pressure; and magnetizing the magnetic substance film by applying a magnetic field to the magnetic substance film under the second pressure.
First claim
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What is claimed is: 1 . A semiconductor device manufacturing method comprising: loading a substrate with a magnetic substance film formed thereon into a process container; regulating an internal pressure of the process container to a first pressure lower than an atmospheric pressure; regulating the internal pressure of the process container from the first pressure to a second pressure higher than the first pressure; and magnetizing the magnetic substance film by applying a magnetic field to the magnetic substance film under the second pressure. 2 . The semiconductor device manufacturing method of claim 1 , wherein the second pressure falls within a range of 0.1 Pa to 100 kPa. 3 . The semiconductor device manufacturing method of claim 1 , wherein the second pressure falls within a range of 100 Pa to 100 kPa. 4 . The semiconductor device manufacturing method of claim 1 , wherein the first pressure falls within a range of 10 μPa to 0.1 Pa. 5 . A semiconductor device manufacturing method comprising: loading a substrate with a magnetic substance film formed thereon into a process container; regulating an internal pressure of the process container to fall within a range of 0.1 Pa to 100 kPa; and magnetizing the magnetic substance film by applying a magnetic field to the magnetic substance film in a state where the internal pressure of the process container is kept within the range of 0.1 Pa to 100 kPa. 6 . The semiconductor device manufacturing method of claim 1 , wherein the magnetizing includes applying the magnetic field to the magnetic substance film while heating the magnetic substance film. 7 . The semiconductor device manufacturing method of claim 1 , wherein the magnetizing includes supplying an inert gas into the process container. 8 . The semiconductor device manufacturing method of claim 1 , wherein the loading includes loading the substrate into the process container while vertically holding the substrate by a substrate holder. 9 . The semiconductor device manufacturing method of claim 1 , wherein the loading includes loading the substrate into the process container while horizontally holding the substrate by a substrate holder. 10 . The semiconductor device manufacturing method of claim 5 , wherein the magnetizing includes applying the magnetic field to the magnetic substance film while heating the magnetic substance film. 11 . The semiconductor device manufacturing method of claim 5 , wherein the magnetizing includes supplying an inert gas into the process container. 12 . The semiconductor device manufacturing method of claim 5 , wherein the loading includes loading the substrate into the process container while vertically holding the substrate by a substrate holder. 13 . The semiconductor device manufacturing method of claim 5 , wherein the loading includes loading the substrate into the process container while horizontally holding the substrate by a substrate holder.
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Classifications
Forming or maintaining special atmospheres or vacuum within heating chambers (supplying steam, vapour, gases or liquids F27D7/02) · CPC title
Arrangements of controlling devices · CPC title
with electromagnetic fields acting directly on the material being heated · CPC title
- F27B3/08Primary
heated electrically, with or without any other source of heat · CPC title
adapted for treating the charge in vacuum or special atmosphere · CPC title
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- What does patent US2017077396A1 cover?
- There is provided a semiconductor device manufacturing method which includes: loading a substrate with a magnetic substance film formed thereon into a process container; regulating an internal pressure of the process container to a first pressure lower than an atmospheric pressure; regulating the internal pressure of the process container from the first pressure to a second pressure higher than…
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification F27B3/08. Mapped technology areas include Mechanical Engineering.
- When was this patent published?
- Publication date Thu Mar 16 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).