Power package with integrated magnetic field sensor

Patent metadata

Field	Value
Publication number	US-2016379966-A1
Application number	US-201514747382-A
Country	US
Kind code	A1
Filing date	Jun 23, 2015
Priority date	Jun 23, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

First claim

1 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; a metal clip included in the power semiconductor package, the metal clip electrically connecting one or more of the leads to the power semiconductor die or to another one of the leads; and a magnetic field sensor positioned over or under, and galvanically isolated from, the metal clip, and located in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.

2 . (canceled)

3 . The power semiconductor package of claim 1 , wherein the magnetic field sensor is a magnetoresistive sensor or a Hall sensor.

4 . The power semiconductor package of claim 1 , wherein the power semiconductor package further comprises a spacer separating the magnetic field sensor from the metal clip.

5 . The power semiconductor package of claim 4 , wherein the spacer is selected from the group consisting of: a semiconductor die; a polymer; a ceramic; a non-conductive adhesive; and a non-conductive film.

6 . (canceled)

7 . The power semiconductor package of claim 1 , wherein the metal clip has a tapered region for which the width of the metal clip reduces to less than the width of the magnetic field sensor, and wherein the magnetic field sensor is positioned over or under the tapered region.

8 . The power semiconductor package of claim 7 , wherein the tapered region is interposed between wider opposing end regions of the metal clip, wherein the metal clip further comprises lateral branches which extend in parallel with the tapered region between the opposing end regions, wherein the lateral branches are spaced apart from the tapered region, and wherein the lateral branches are uncovered by the magnetic field sensor.

9 - 13 . (canceled)

14 . The power semiconductor package of claim 25 , wherein the magnetic field sensor is galvanically isolated from the power semiconductor die.

15 . The power semiconductor package of claim 25 , further comprising a spacer separating the magnetic field sensor from the power semiconductor die.

16 . (canceled)

17 . The power semiconductor package of claim 25 , further comprising:
a plurality of electrical conductors each having a first end attached to one of the leads and a second end attached to a side of the magnetic field sensor facing away from the power semiconductor die.

18 . The power semiconductor package of claim 1 , further comprising:
a plurality of passive components attached to different ones of the leads; and a plurality of electrical conductors electrically connecting the passive components to the magnetic field sensor.

19 . The power semiconductor package of claim 1 , further comprising a logic device attached to the metal clip and operable to control the magnetic field sensor.

20 . The power semiconductor package of claim 19 , further comprising:
a plurality of passive components attached to different ones of the leads; and a plurality of electrical conductors electrically connecting the passive components to the magnetic field sensor and the logic device.

21 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway, wherein the magnetic field sensor is disposed on a second one of the leads which is electrically connected to the power semiconductor die through one or more electrical conductors interposed between the power semiconductor die and the magnetic field sensor.

22 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway, wherein the magnetic field sensor is disposed on a second one of the leads which is electrically connected to the power semiconductor die through one or more electrical conductors, wherein the magnetic field sensor has an opening extending through the sensor, and wherein at least one of the one or more electrical conductors is attached to the second lead through the opening in the magnetic field sensor.

23 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway, wherein the magnetic field sensor is embedded in the power semiconductor die and galvanically isolated from each power device included in the power semiconductor die.

24 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway; a first set of one or more electrical conductors having a first end attached to a second one of the leads and a second end attached to a third one of the leads; and a second set of one or more electrical conductors haying a first end attached to the third lead and a second end attached to the power semiconductor die, wherein the magnetic field sensor is disposed on the third lead and interposed between the first and the second set of one or more electrical conductors.

25 . A power semiconductor package, comprising:
a substrate having a plurality of metal leads; a power semiconductor die attached to a first one of the leads; and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die, the magnetic field sensor being operable to generate a

Assignees

• Infineon Technologies Ag

Inventors

• Chen Liu
• Salminen Toni
• Mieslinger Stefan
• Babulano Giuliano Angelo
• Oetjen Jens
• Dinkel Markus
• Jost Franz

Classifications

• H10W90/766

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/756

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W72/07552

  changes in structures or sizes · CPC title

• H10W72/652

  comprising metals or metalloids, e.g. silver · CPC title