Mask blank, phase-shift mask and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-2016377975-A1
Application number	US-201415121124-A
Country	US
Kind code	A1
Filing date	Dec 9, 2014
Priority date	Mar 18, 2014
Publication date	Dec 29, 2016
Grant date	—

Abstract

To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.
A mask blank 10 comprises a phase-shift film 2 and a light-shielding film 4 on a transparent substrate 1 , the phase-shift film 2 is made of a material with ArF light fastness, and at least one layer in the light-shielding film 4 is made of a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below:
C N ≦9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611×R M −21.084  Formula (1)
wherein R M is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and C N is the content of nitrogen in said one layer.

First claim

1 - 9 . (canceled)

10 . A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium; wherein the phase-shift film is made of a material in which transition metal, silicon, and nitrogen are contained, and a ratio of the content [at %] of transition metal to the total content [at %] of transition metal and silicon is less than 4 [%]; wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (1) below:
C N ≦9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611×R M −21.084  Formula (1)

wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.

11 . A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium; wherein the phase-shift film is comprised of a surface layer and layers other than the surface layer; wherein the layers other than the surface layer are made of a material in which transition metal, silicon, and nitrogen are contained, a ratio of the content [at %] of transition metal to the total content [at %] of transition metal and silicon is less than 9 [%], and incomplete nitride is a main component; wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (2) below:
C N ≦9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611×R M −21.084  Formula (2)

wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.

12 . A mask blank having a structure in which a phase-shift film, an etching stopper film, and a light-shielding film are laminated in said order on a transparent substrate,
wherein the etching stopper film is made of a material containing chromium; wherein the phase-shift film is comprised of a surface layer and layers other than the surface layer; wherein the layers other than the surface layer are made of a material consisting of silicon and nitrogen, or a material consisting of silicon, nitrogen, and one or more elements selected from metalloid elements, non-metallic elements, and noble gases; wherein the light-shielding film has a single layer structure, or a laminated structure comprised of multiple layers; and wherein at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, but does not contain nitrogen and oxygen, or a material which contains transition metal, silicon, and nitrogen, and satisfies the conditions of Formula (3) below:
C N ≦9.0×10 −6 ×R M 4 −1.65×10 −4 ×R M 3 −7.718×10 −2 ×R M 2 +3.611×R M −21.084  Formula (3)

wherein R M is a ratio [%] of the content [at %] of transition metal to the total content [at %] of transition metal and silicon in said one layer, and C N [at %] is the content [at %] of nitrogen in said one layer.

13 . The mask blank according to claim 12 , wherein the layers other than the surface layer in the phase-shift film have a structure in which a low-transmittance layer and a high-transmittance layer are laminated, and
wherein the low-transmittance layer has nitrogen content that is relatively lower than the high-transmittance layer.

14 . The mask blank according to claim 12 , wherein the surface layer in the phase-shift film is made of a material consisting of silicon, nitrogen, and oxygen, or a material consisting of silicon, nitrogen, oxygen, and one or more elements selected from metalloid elements, non-metallic elements, and noble gases.

15 . The mask blank according to claim 10 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.

16 . The mask blank according to claim 11 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.

17 . The mask blank according to claim 12 , wherein the optical density with respect to ArF excimer laser light is 2.7 or more in the laminated structure of the phase-shift film, etching stopper film, and light-shielding film.

18 . The mask blank according to claim 10 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.

19 . The mask blank according to claim 11 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.

20 . The mask blank according to claim 12 , wherein a hard mask film made of a material containing chromium is provided on the light-shielding film.

21 . A phase-shift mask manufactured from the mask blank according to claim 10 .

22 . A phase-shift mask manufactured from the mask blank according to claim 11 .

23 . A phase-shift mask manufactured from the mask blank according to claim 12 .

24 . A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 21 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.

25 . A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 22 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.

26 . A method for manufacturing a semiconductor device, comprising the step of:
setting the phase-shift mask according to claim 23 on an exposure apparatus having an exposure light source for emitting ArF excimer laser light, so as to transfer a transfer pattern onto a resist film formed on a transfer target substrate.

Assignees

• Hoya Corp

Inventors

• Matsumoto Atsushi
• Shishido Hiroaki
• Uchida Takashi

Classifications

• G03F7/2053

  using a laser (ablative removal B41C) · CPC title

• G03F1/32 Primary

  Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof · CPC title

• G03F1/58

  having two or more different absorber layers, e.g. stacked multilayer absorbers · CPC title

• G03F1/66

  Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof · CPC title

• G03F1/20

  Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof · CPC title