System and Method for Production Line Monitoring

Patent metadata

Field	Value
Publication number	US-2016377552-A1
Application number	US-201615166819-A
Country	US
Kind code	A1
Filing date	May 27, 2016
Priority date	May 28, 2015
Publication date	Dec 29, 2016
Grant date	—

Abstract

A method for production line monitoring during semiconductor device fabrication includes acquiring a plurality of inspection results from a plurality of reference samples with an inspection sub-system. The method includes storing the acquired inspection results and geometric pattern codes for each of the reference samples in a database. The method includes acquiring an additional inspection result from an additional sample, where the additional inspection result includes an additional set of geometric pattern codes for identifying each defect identified within the additional inspection result from the additional sample. The method also includes correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

First claim

What is claimed:

1 . A system for semiconductor device production monitoring comprising:
an inspection sub-system including an illumination source and a detector, wherein the illumination source is configured to generate illumination, wherein the inspection sub-system is configured to scan the illumination from the illumination source across a sample, wherein the detector is configured to detect illumination from the sample; and a database maintained in memory for storing inspection results acquired from a reference set of samples with the inspection sub-system, wherein each inspection result from the reference set of samples includes a geometric pattern code for each defect identified on a particular reference sample, wherein the geometric pattern code serves to identify the pattern associated with a particular defect on the particular reference sample; an analyzer, the analyzer including one or more processors and memory, wherein the one or more processors are configured to execute a set of program instructions maintained on the memory, the program instructions are configured to cause the one or processors to:
receive an additional inspection result from an additional sample from the inspection sub-system, wherein the additional inspection result includes an additional set of geometric pattern codes for each defect identified within the additional inspection result from the additional sample;
retrieve the inspection results acquired from the reference set of samples including the geometric pattern code for each defect identified on the particular reference sample from the database; and
correlate the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

2 . The system of claim 1 , wherein the correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold comprises:
correlating a frequency of occurrence of each of the set of geometric pattern codes of the additional sample to the frequency of occurrence of each of the set of geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

3 . The system of claim 1 , wherein the correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold comprises:
comparing the set of geometric pattern codes of the additional sample to the geometric pattern codes from the reference set of samples to identify a deviation between the set of geometric pattern codes of the additional sample and the geometric pattern codes from the reference set of samples; and determining whether the deviation is larger than sample-to-sample variations of the geometric pattern codes from the reference set of samples.

4 . The system of claim 1 , wherein the analyzer is further configured to:
flag at least one of the one or more new patterns or the one or more patterns displaying a frequency of occurrence above a selected threshold.

5 . The system of claim 1 , wherein the analyzer is further configured to:
report an excursion alert to a user interface in response to the identification of at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

6 . The system of claim 1 , wherein the analyzer is further configured to:
direct the inspection sub-system to perform one or more inspection measurements on one or more defects associated with at least one of the one or more new patterns or the one or more patterns displaying a frequency of occurrence above a selected threshold.

7 . The system of claim 1 , wherein the analyzer is further configured to:
provide an identified one or more new patterns to a pattern search database.

8 . The system of claim 7 , wherein the pattern search database is configured to identify one or more instances of the one or more new patterns in the patter search data base.

9 . The system of claim 8 , wherein the pattern search database is configured to transmit the number of instances of the one or more new patterns appearing in the pattern search database to the analyzer.

10 . The system of claim 9 , wherein the analyzer is configured to correlate the number of instances of the one or more new patterns with a failure frequency of each geometric design code of the reference set of samples and the additional sample stored in the database.

11 . The system of claim 10 , wherein the analyzer is configured to flag one or more new patterns displaying a failure frequency above a selected threshold as a systematic defect.

12 . The system of claim 1 , wherein the inspection sub-system is configured in a brightfield inspection mode.

13 . The system of claim 1 , wherein the inspection sub-system is configured in a darkfield inspection mode.

14 . The system of claim 1 , wherein the inspection sub-system comprises:
a light-based inspection sub-system.

15 . The system of claim 1 , wherein the inspection sub-system comprises:
an electron-based inspection sub-system

16 . The system of claim 1 , wherein the inspection sub-system comprises:
a narrow band inspection sub-system

17 . The system of claim 1 , wherein the inspection sub-system comprises:
a broadband inspection sub-system.

18 . The system of claim 17 , wherein the broadband inspection sub-system comprises:
a broadband plasma (BPP) inspection sub-system.

19 . The system of claim 1 , wherein the sample comprises:
a semiconductor wafer.

20 . A method for semiconductor device production monitoring comprising:
acquiring a plurality of inspection results from a plurality of reference samples with an inspection sub-system, each inspection result being acquired from one reference sample of the plurality of reference samples, wherein each inspection result includes a geometric pattern code for each defect identified on the particular reference sample, wherein the geometric pattern code serves to identify the pattern associated with the particular defect; storing the acquired inspection results and the associated geometric pattern codes in a database; acquiring an additional inspection result from an additional sample, wherein the additional inspection result includes an additional set of geometric pattern codes for identifying each defect identified within the additional inspection result from the additional sample; and correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patterns or one or more patterns displaying a frequency of occurrence above a selected threshold.

21 . The method of claim 20 , wherein the correlating the set of geometric pattern codes of the additional sample with the geometric pattern codes from the reference set of samples to identify at least one of one or more new patte

Assignees

• Kla Tencor Corp

Inventors

• Paramasivam Saravanan
• Plihal Martin

Classifications

• H10P74/203 Primary

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23 Primary

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• G01N21/9501 Primary

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• G01N2021/8858

  Flaw counting · CPC title