Microchamber laser processing systems and methods using localized process-gas atmosphere

Patent metadata

Field	Value
Publication number	US-2016354865-A1
Application number	US-201615145833-A
Country	US
Kind code	A1
Filing date	May 4, 2016
Priority date	Jun 8, 2015
Publication date	Dec 8, 2016
Grant date	—

Abstract

Microchamber laser processing systems and methods that use a localized process-gas atmosphere are disclosed. The method includes processing a substrate with a surface by providing a process gas to a central region of the microchamber that includes the surface of the substrate and providing a curtain gas to a peripheral region of the chamber that includes the surface of the substrate. The method also includes providing a vacuum to a region of the chamber between its central and peripheral regions of the chamber, wherein the vacuum removes the process gas and curtain gas, thereby forming a localized process-gas atmosphere at the surface of the substrate in the central region of the chamber and a gas curtain of the curtain gas in the peripheral region of the chamber. The method also includes irradiating the surface of the substrate through the localized process-gas atmosphere with a laser beam that forms a laser line to perform a laser process on the surface of the substrate.

First claim

What is claimed is:

1 . A microchamber system for processing a surface of a substrate, comprising:
a top member having at least one optical-access feature sized to accommodate a laser beam that forms a laser line at the surface of the substrate; a movable stage assembly spaced apart from and that moves relative to the top member to define a chamber having a central region and a peripheral region, the movable stage assembly including a chuck that supports the substrate; a process-gas supply that contains a process gas and that is operably connected to the central region of the chamber by at least one process-gas conduit; a curtain-gas supply that contains a curtain gas and that is operably connected to the peripheral region of the chamber by at least one curtain-gas conduit; and a vacuum system operably connected to the chamber by at least one vacuum conduit that resides radially between the at least one process gas conduit and the at least one curtain-gas conduit so that when the process gas and the curtain gas are respectively flowed into the central and peripheral regions of the chamber, a localized process-gas atmosphere is formed in the central region of the chamber and a gas curtain of curtain gas is formed in the peripheral region of the chamber.

2 . The microchamber system according to claim 1 , further comprising a laser source that forms the laser beam, wherein the laser source is operably arranged outside of the chamber relative to the optical-access feature.

3 . The microchamber system according to claim 1 , wherein the curtain gas consists of one or more gasses selected from the group of gases consisting of: nitrogen, argon, helium and neon.

4 . The microchamber system according to claim 1 , wherein the process gas is one or more gasses selected from the group of gases consisting of: NH 3 , N 2 O, NO 2 and an H 2 /N 2 mixture.

5 . The microchamber system according to claim 1 , wherein the process gas consists of ammonia and water vapor.

6 . The microchamber system according to claim 1 , wherein the at least one curtain-gas conduit includes a radially arranged array of curtain-gas conduits that run through the top member, wherein the at least one vacuum conduit includes a radially arranged array of vacuum conduits that run through the top member, and wherein the radially arranged array of vacuum conduits is concentric with and resides within the radially arranged array of curtain-gas conduits.

7 . A method of laser processing a surface of a substrate movably supported in a chamber of a microchamber system, comprising:
providing a process gas to a central region of the chamber that includes the surface of the substrate; providing a curtain gas to a peripheral region of the chamber that includes the surface of the substrate; providing a vacuum to a region of the chamber between the central and peripheral regions of the chamber, wherein the vacuum removes process gas and curtain gas thereby forming a localized process-gas atmosphere adjacent the surface of the substrate in the central region of the chamber and a gas curtain of the curtain gas in the peripheral region of the chamber; and irradiating the surface of the substrate through the localized process-gas atmosphere with a laser beam that forms a laser line to perform a laser process on the surface of the substrate.

8 . The method according to claim 7 , further comprising moving the substrate relative to the laser beam so that the laser line scans over the surface of the substrate.

9 . The method according to claim 7 , wherein the process gas includes ammonia.

10 . The method according to claim 9 , wherein the process gas consists of ammonia and water vapor.

11 . The method according to claim 8 , wherein the process gas is nitrogen-based, and wherein the laser process forms a nitride-based oxide film on the surface of the substrate.

12 . The method according to claim 11 , wherein the process gas is selected from the group of gases consisting of: NH 3 , N 2 O, NO 2 , and an H 2 /N 2 mixture.

13 . The method according to claim 7 , wherein the curtain gas consists of one or more gasses selected from the group of gases consisting of: nitrogen, argon, helium and neon.

Assignees

• Ultratech Inc

Inventors

• Mcwhirter James T

Classifications

• H10P32/20

  Diffusion for doping of insulating layers · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6316

  Formation by nitridation, e.g. nitridation of the substrate · CPC title

• H10D64/01344

  in a nitrogen-containing ambient, e.g. N2O oxidation · CPC title

• B23K26/125 Primary

  of mixed gases · CPC title