Method for forming conductor layer, and method for producing multilayer wiring substrate using same

Patent metadata

Field	Value
Publication number	US-2016353580-A1
Application number	US-201515113234-A
Country	US
Kind code	A1
Filing date	Jan 21, 2015
Priority date	Jan 22, 2014
Publication date	Dec 1, 2016
Grant date	—

Abstract

A method for forming a conductor layer, including subjecting a surface of a polyimide film where a polyimide layer (a) is formed to polyimide etching treatment, to remove at least part of the polyimide layer (a), the polyimide film having the polyimide layer (a) formed on one surface or both surfaces of a polyimide layer (b); and then forming a conductor layer on the surface, such that the polyimide etching treatment time T (min), which is represented using t (min) defined by the formula as described below, is within the range of 0.2t≦T≦5t.

t


(
min
)

=

Thickness



of



polyimide



layer




(
a
)



(

μ



m

)

Etching



rate



in



the



direction



of



thickness



of





polyimide



layer




(
a
)



(μm/min)

First claim

1 . A method for forming a conductor layer, comprising:
subjecting a surface of a polyimide film where a polyimide layer (a) is formed to polyimide etching treatment, to remove at least part of the polyimide layer (a), wherein the polyimide film has the polyimide layer (a) formed on one surface or both surfaces of a polyimide layer (b); and then forming a conductor layer on the surface,
wherein the polyimide etching treatment time T (min), which is represented using t (min) defined by the formula as described below, is within the range of 0.2t≦T≦5t.

t


(
min
)

=

Thickness



of



polyimide



layer




(
a
)



(

μ



m

)

Etching



rate



in



the



direction



of



thickness



of





polyimide



layer




(
a
)



(μm/min)

2 . The method for forming a conductor layer according to claim 1 , wherein
the polyimide layer (b) consists essentially of a polyimide obtained using a 3,3′,4,4′-biphenyltetracarboxylic acid compound in an amount of 90 mol % or more as the tetracarboxylic acid component, and 4,4′-diaminodiphenyl ether and/or p-phenylenediamine in an amount of 90 mol % or more as the diamine component, and the polyimide layer (a) consists essentially of a polyimide obtained using a 3,3′,4,4′-biphenyltetracarboxylic acid compound, a 2,3,3′,4′-biphenyltetracarboxylic acid compound, a pyromellitic acid compound, or a plurality of compounds selected from these compounds as the tetracarboxylic acid component, and p-phenylenediamine, 4,4′-diaminodiphenyl ether, 4,4′-diaminodiphenyl methane, 2,2-bis(4-aminophenyl)propane, 1,3-bis(4-aminophenoxy benzene), 1,4-bis(4-aminophenoxy)benzene, 4,4′-bis(4-aminophenyl)diphenyl ether, 4,4′-bis(4-aminophenyl)diphenyl methane, 4,4′-bis(4-aminophenoxy)diphenyl ether, 4,4′-bis(4-aminophenoxy)diphenyl methane, 2,2-bis[4-(aminophenoxy)phenyl]propane, or a plurality of compounds selected from these compounds as the diamine component, with the proviso that a polyimide obtained using 3,3′,4,4′-biphenyltetracarboxylic acid compound in an amount of 90 mol % or more as the tetracarboxylic acid component, and 4,4′-diaminodiphenyl ether and/or p-phenylenediamine in an amount of 90 mol % or more as the diamine component is excluded.

3 . The method for forming a conductor layer according to claim 1 , wherein the polyimide layer (a) consists of polyimide obtained from a polyimide precursor composition comprising any one or more of an aminosilane compound, an epoxysilane compound, an aluminum compound, or a titanate compound.

4 . The method for forming a conductor layer according to claim 1 , wherein the chemical etching rate of the polyimide constituting the polyimide layer (b) with a polyimide etching solution is lower than the chemical etching rate of the polyimide constituting the polyimide layer (a) with the polyimide etching solution.

5 . The method for forming a conductor layer according to claim 1 , wherein the thickness of the polyimide layer (b) is 1 μm to 100 μm, and the thickness of the polyimide layer (a) is 0.05 μm to 5 μm.

6 . The method for forming a conductor layer according to claim 1 , wherein the polyimide film is a polyimide film obtained by
applying a polyimide precursor solution, which is to be formed into the polyimide layer (a), to at least one surface of a self-supporting film obtained from a polyimide precursor solution, which is to be formed into the polyimide layer (b); and then subjecting the film to heat treatment at a temperature of 350° C. to 600° C.

7 . The method for forming a conductor layer according to claim 1 , wherein the polyimide etching treatment is wet etching treatment with a polyimide etching solution, or dry etching treatment by plasma treatment.

8 . The method for forming a conductor layer according to claim 1 , wherein a metal film layer as the conductor layer is formed on the surface of the polyimide film by electroless plating.

9 . A method for producing a multilayer wiring substrate, comprising:
laminating a polyimide film onto a printed wiring board in which a conductor wiring pattern is formed on an insulation substrate; forming a via to the conductor wiring patt

Assignees

• Ube Industries

Inventors

• Miura Toru
• Bamba Keita
• Kohda Masafumi
• Yokozawa Tadahiro

Classifications

• H05K1/0298

  Multilayer circuits · CPC title

• H05K3/181 Primary

  by electroless plating (adhesives therefor H05K3/387) · CPC title

• H01J2237/334

  Etching · CPC title

• H05K3/0017

  Etching of the substrate by chemical or physical means · CPC title

• H01J37/32009

  Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources (plasma generation in general H05H1/24) · CPC title