Process for making an iridium layer

Patent metadata

Field	Value
Publication number	US-2016340792-A1
Application number	US-201615146888-A
Country	US
Kind code	A1
Filing date	May 4, 2016
Priority date	Sep 17, 2012
Publication date	Nov 24, 2016
Grant date	—

Abstract

A process for depositing a plurality of layers of iridium on a substrate includes: contacting the substrate with an electrolyte composition including: iridium cations protons; biasing the substrate at a first potential; forming iridium on the substrate at the first potential of the substrate; disposing hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing a coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.

First claim

What is claimed is:

1 . A process for depositing a plurality of layers of iridium on a substrate, the process comprising:
contacting the substrate with an electrolyte composition comprising:
a plurality of iridium cations; and
a plurality of protons;
biasing the substrate at a first potential; forming iridium on the substrate by electrochemically reducing iridium cations from the electrolyte composition at the first potential of the substrate; disposing hydrogen on the substrate from protons in the electrolyte composition; increasing a coverage of hydrogen on the substrate; self-terminating the forming of iridium on the substrate in response to increasing the coverage of hydrogen on the substrate; oxidizing hydrogen on the substrate by changing a potential of the substrate from the first potential to a second potential; and changing the potential of the substrate from the second potential to a third potential for forming additional iridium on the substrate by electrochemically reducing iridium cations from the electrolyte composition to deposit a plurality of layers of iridium on the substrate, such that forming the additional iridium on the substrate occurs at the third potential in response to oxidizing the hydrogen on the substrate at the second potential.

2 . The process of claim 1 , further comprising conducting the forming of iridium on the substrate at a temperature from 25° C. to 103° C.

3 . The process of claim 2 , further comprising conducting forming of iridium on the substrate at a pH of the electrolyte composition from 0 to 6.5.

4 . The process of claim 3 , wherein self-terminating the forming of iridium on the substrate comprises forming H 2 from hydrogen disposed on the substrate.

5 . The process of claim 4 , further comprising repetitively changing the potential of the substrate from the second potential to the third potential to control a thickness of the iridium formed on the substrate.

6 . The process of claim 1 , wherein the substrate comprises an electrically conductive metal.

7 . The process of claim 6 , wherein the electrically conductive metal comprises a transition metal, a thin oxide thereof, a conductive oxide thereof, or a combination comprising any of the foregoing electrically conductive metals.

8 . The process of claim 7 , wherein the transition metal comprises copper, gold, iridium, nickel, cobalt, palladium, ruthenium, titanium, tantalum, platinum, rhodium, silver, or a combination comprising any of the foregoing transition metals.

9 . The process of claim 1 , wherein the substrate comprises a main group element, and
the substrate is electrically conductive, semiconductive, or photoconductive.

10 . The process of claim 9 wherein the conductive substrate comprises carbon, boron, phosphorus, silicon, germanium, gallium, arsenic, tin, lead, indium or lead.

11 . The process of claim 1 , wherein the iridium cations comprise Ir 3+ .

12 . The process of claim 11 , wherein the electrolyte composition further comprises SO 4 2− , and
the Ir 3+ is present as a complex comprising an Ir 3+ complex.

13 . The process of claim 12 , wherein the Ir 3+ complex comprises
[IrX 6 ] 3− , [IrX 6 ] 2− , [IrX 5 (H 2 O)] 2− , [IrX 5 (H 2 O) 2 ] − , [(H 2 O) 4 Ir(OH) 2 Ir(H 2 O) 4 ] 4+ , [(H 2 O) 5 Ir(OH)Ir(H 2 O) 5 ] 5+ , [Ir 3+ X − w (HSO 4 − ) y (H 2 O) z ] 3-w-y , [Ir 3+ X − w (SO 4 2− ) y (H 2 O) z ] 3-w-2y , a chloride equivalent thereof, a bromide equivalent thereof, a mixed chloride-bromide equivalent thereof, or a combination comprising at least one of the foregoing iridium complexes,
wherein X is a halogen that comprises Cl, Br, or a combination of Cl and Br; w is an integer from 1 to 6; y is an integer selected from 0, 1, or 2; and z is an integer such that z=6−x−y.

14 . The process of claim 13 , wherein the Ir3 + complex is [IrCl 6 ] 3− , and
the electrolyte composition further comprises K 3 IrCl 6 —Na 2 SO 4 —H 2 SO 4 .

15 . The process of claim 13 , wherein the Ir3+ complex is [IrCl 6 ] 3− , and
the electrolyte composition further comprises K 3 IrCl 6 —NaCl, wherein the total Cl − concentration is less than 3 mol/L.

16 . The process of claim 1 , wherein the iridium on the substrate comprises a submonolayer coverage of iridium.

17 . The process of claim 16 , wherein the submonolayer coverage comprises a thin film.

18 . The process of claim 17 , wherein the thin film is semi-coherent.

19 . The process of claim 4 , wherein a thickness of the iridium formed on the substrate is from 0.2 nanometers (nm) to 10,000 nm.

20 . The process of claim 5 , wherein a thickness of the iridium formed on the substrate increases with a number of repetitions of changing the potential of the substrate from the second potential to the third potential.

21 . The process of claim 5 , further comprising subjecting the substrate to a waveform that comprises:
biasing the substrate at the first potential for a first period to perform the forming iridium on the substrate; changing the potential of the substrate from the first potential to the second potential over a first transition period; biasing the substrate at the second potential for a second period to perform the oxidizing hydrogen on the substrate; changing the potential of the substrate from the second potential to the third potential over a second transition period; biasing the substrate at the third potential for a third period to perform the forming of additional iridium on the substrate; changing the potential of the substrate from the third potential to a fourth potential over a third transition period; and biasing the substrate at the fourth potential for a fourth period to oxidize hydrogen on the substrate, wherein the waveform is an arbitrary waveform, a sawtooth waveform, a square waveform, a triangular waveform, a sinusoidal waveform, a symmetric waveform, an asymmetric waveform, an amplitude modulated waveform, a frequency modulated waveform, or a combination comprising at least one of the foregoing waveforms.

22 . A process for performing an electrochemical reaction, the process comprising:
providing an electrode that comprises a substrate and a plurality of layers of iridium disposed on the substrate and deposited according to the process of claim 1 ; contacting the electrode with a second electrolyte composition comprising an electrochemically active reagent; and biasing the electrode at a potential effective to catalyze:
an oxygen evolution reaction, wherein the second electrolyte composition is an acid environment;
a hydrogen evolution reaction, wherein the second electrolyte composition is an alkaline environment;
a hydrogen oxidation reaction wherein the second electrolyte composition is an alkaline environment; or
an organic fuel oxidation reaction wherein the second electrolyte composition is an acid or alkaline environment,
to perform the electrochemical reaction.

Assignees

• Ahn Sang Hyun
• Nat Inst Of Standards & Tech

Inventors

• Moffat Thomas P
• Liu Yihua
• Ahn Sang Hyun

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H01L21/2885

  Electricity · mapped topic

• C25D5/10

  Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10) · CPC title

• C25D3/50

  of platinum group metals · CPC title

• C25D21/12 Primary

  Process control or regulation (controlling or regulating in general G05) · CPC title