Substrate liquid processing apparatus, substrate liquid processing method, and computer-readable storage medium storing substrate liquid processing program

Patent metadata

Field	Value
Publication number	US-2016336202-A1
Application number	US-201615152918-A
Country	US
Kind code	A1
Filing date	May 12, 2016
Priority date	May 14, 2015
Publication date	Nov 17, 2016
Grant date	—

Abstract

Disclosed is a substrate liquid processing apparatus that includes: a liquid processing unit that performs a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit that supplies an etching liquid to the liquid processing unit; and a controller that controls the etching liquid supply unit. The controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

First claim

What is claimed is:

1 . A substrate liquid processing apparatus comprising:
a liquid processing unit configured to perform a liquid processing on a film formed on a surface of a substrate with an etching liquid; an etching liquid supply unit configured to supply the etching liquid to the liquid processing unit; and a controller configured to control the etching liquid supply unit, wherein the controller is configured to perform a control such that an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so that the substrate is etched in the liquid processing unit.

2 . The substrate liquid processing apparatus of claim 1 , wherein the controller is configured to perform a control to change a state of the etching rate for the film by changing a temperature or a concentration of the etching liquid supplied to the liquid processing unit from the etching liquid supply unit.

3 . The substrate liquid processing apparatus of claim 1 , wherein the controller is configured to:
set a time and an etching amount for etching the substrate with an etching liquid in a predetermined state of a standard etching rate for the film as a standard etching time and a standard etching amount; set a time and an etching amount for etching the substrate in the liquid processing unit by supplying, from the etching liquid supply unit to the liquid processing unit, an etching liquid in a state of having an etching rate lower than that of the etching liquid in the standard state, as a first processing time and a first etching amount; set a time and an etching amount for etching the substrate in the liquid processing unit by supplying, from the etching liquid supply unit to the liquid processing unit, an etching liquid in a state of having an etching rate higher than that of the etching liquid in the standard state, as a second processing time and a second etching amount; and perform a control such that a sum of the first processing time and the second processing time becomes the standard processing time, and a sum of the first etching amount and the second etching amount becomes the standard etching amount.

4 . The substrate liquid processing apparatus of claim 1 , wherein the film is a silicon nitride film formed on the surface of the silicon oxide film, and the etching liquid is a phosphoric acid aqueous solution.

5 . The substrate liquid processing apparatus of claim 1 , wherein the film is a silicon nitride film formed on the surface of the silicon oxide film and the etching liquid is a phosphoric acid aqueous solution, and
the controller is configured to perform the control such that the etching is performed with the phosphoric acid aqueous solution in the state of having a relatively low etching rate until the silicon concentration in the phosphoric acid aqueous solution becomes a concentration at which the amount of the silicon oxide film etched by the phosphoric acid aqueous solution is suppressed, and then, the etching is performed with the phosphoric acid aqueous solution in the state of having a relatively high etching rate.

6 . A substrate liquid processing method comprising:
performing an etching with an etching liquid in a state of having a relatively low etching rate for a film formed on a surface of a substrate; and performing an etching with an etching liquid in a state having a relatively high etching rate for the film formed on the surface of the substrate.

7 . The substrate liquid processing method of claim 6 , wherein the state of the etching rate for the film is changed by changing a temperature or a concentration of the etching liquid.

8 . The substrate liquid processing method of claim 6 , wherein a time and an etching amount for etching the substrate with an etching liquid in a predetermined state of a standard etching rate for the film are set as a standard etching time and a standard etching amount;
a time and an etching amount for etching the substrate in the liquid processing unit by supplying, from the etching liquid supply unit to the liquid processing unit, an etching liquid in a state of having an etching rate lower than that of the etching liquid in the standard state, are set as a first processing time and a first etching amount; a time and an etching amount for etching the substrate in the liquid processing unit by supplying, from the etching liquid supply unit to the liquid processing unit, an etching liquid in a state of having an etching rate higher than that of the etching liquid in the standard state, are set as a second processing time and a second etching amount; and the substrate is etched such that a sum of the first processing time and the second processing time becomes the standard processing time, and a sum of the first etching amount and the second etching amount becomes the standard etching amount.

9 . The substrate liquid processing method of claim 6 , wherein the film is a silicon nitride film formed on the surface of the silicon oxide film, and the etching liquid is a phosphoric acid aqueous solution.

10 . The substrate liquid processing method of claim 6 , wherein the film is a silicon nitride film formed on the surface of the silicon oxide film, and the etching liquid is a phosphoric acid aqueous solution, and
the etching is performed with the phosphoric acid aqueous solution in the state of having a relatively low etching rate until the silicon concentration in the phosphoric acid aqueous solution becomes a concentration at which the amount of the silicon oxide film etched by the phosphoric acid aqueous solution is suppressed, and then, the etching is performed with the phosphoric acid aqueous solution in the state having a relatively high etching rate.

11 . A non-transitory computer-readable storage medium storing a substrate liquid processing program that, when executed, causes a computer to execute a substrate liquid processing method by using a substrate liquid processing apparatus including a liquid processing unit configured to perform a liquid processing on a film formed on a surface of a substrate with an etching liquid and an etching liquid supply unit configured to supply an etching liquid to the liquid processing unit,
wherein an etching liquid in a state of having a relatively low etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so as to etch the substrate in the liquid processing unit, and then, an etching liquid in a state of having a relatively high etching rate for the film is supplied from the etching liquid supply unit to the liquid processing unit so as to etch the substrate in the liquid processing unit.

Assignees

• Tokyo Electron Ltd

Inventors

• Sato Hideaki
• Nagai Takashi
• Hara Hiromi

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0422 Primary

  for wet etching · CPC title

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0404

  for general liquid treatment, e.g. etching followed by cleaning · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title