Container for chemical precursors in a deposition process

Patent metadata

Field	Value
Publication number	US-2016333477-A1
Application number	US-201615142847-A
Country	US
Kind code	A1
Filing date	Apr 29, 2016
Priority date	May 13, 2015
Publication date	Nov 17, 2016
Grant date	—

Abstract

Described herein are systems and methods using same for the storage and delivery of chemical precursors that are used in the manufacture of a semiconductor device. In one aspect, the storage system comprises the chemical precursors and a container and the systems have an inlet jet design. The chemical precursor has a low vapor pressure less than about 50 Torr-absolute at container temperature set for delivery. The delivery system further contains a carrier gas. The inlet jet design can deliver the carrier gas at a certain pressure and a certain low rate to impinge upon the surface of the chemical precursors to produce a vapor or droplets of the chemical precursor. The vapor or droplets of the chemical precursor then combine with the carrier gas to provide a precursor-laden fluid stream which will be passed to and used in the processing tool.

First claim

1 . A system for storage and delivery of a chemical precursor to a process tool, comprising:
the chemical precursor selected from the group consisting of metal β-diketonates, metal β-diketoesterates, metal β-ketoiminates, metal β-diiminates, metal alkyls, metal carbonyls, alkyl metal carbonyls, metal cyclopentadienyls, metal cyclopentadienyls carbonyls, metal pyrrolyls, metal imidazolyls, metal amidinates, metal alkoxides, and combinations thereof;
wherein
ligand is selected from the group consisting of monodentate, bidentate and multidentate complexing to the metal atoms, and
the metal is selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Ce, Sm, Tb, Er, Yb, Lu, Ti, Zr, Hf, Fe, Co, Ni, Ru, Ir, Rh, Cu, Al, Sn, Pb, Sb, Bi, Te, Cr, Mo and W;
a container containing the chemical precursor; comprises
a sidewall;
a base;
a lid; and
a head space including space above the chemical precursor within the container; and
an inlet passing through the lid and having a nozzle inside the head space;
wherein tip of the nozzle is located with a distance of greater or equal to 0.5 inches from surface of the chemical precursor and the nozzle is at a 90° angle to the lid;

and
an outlet passing through the lid;
wherein the chemical precursor has a low vapor pressure less than about 50 Torr-absolute at container temperature set for delivery, and has a melting point above or below container temperature set for storage and below the container temperature set for delivery; and the container has a volume ranging from 100 milliliters (ml) to 10 liters.

2 . The system of claim 1 , wherein the container has a temperature set for delivery and the chemical precursor is a liquid chemical precursor; and the system further comprises:
a carrier gas passing through the nozzle and impinging upon surface of the liquid chemical precursor to produce a vapor or droplets of the chemical precursor which combines with the carrier gas to form a precursor-laden fluid stream; and the precursor-laden fluid stream passing through the outlet out from the container to the process tool.

3 . The system of claim 2 , wherein the liquid chemical precursor contains or forms >01 wt % and <20 wt % of solid or non-volatile dissolved components or impurities which are not passed through the outlet.

4 . The system of claim 1 , wherein the chemical precursor is a metal carbonyl selected from the group consisting of dicobalt hexacarbonyl tert-butylacetylene (CCTBA), dicobalt hexacarbonyl dialkylacetylene, cyclopentadienylcobalt dicarbonyl, alkylcyclopentadienyl cobalt dicarbonyl, cyclopentadienylmanganese tricarbonyl (CpMn(CO) 3 ), alkylcyclopentadienylmanganese tricarbonyl (e.g. MeCpMn(CO) 3 , EtCpMn(CO) 3 ), cyclopentadienyltungsten tricarbonyl hydride (CpW(CO) 3 H)), alkylcyclopentadienyl tricarbonyl hydride ((RCp)W(CO) 3 H), tris(carbonyl)(alkylcyclopentadienyl)methyl tungsten ((RCp)W(CO) 3 Me), tris(carbonyl)(alkylcyclopentadienyl)ethyl tungsten ((RCp)W(CO) 3 Et), and combinations thereof.

5 . The system of claim 1 , wherein an equivalent diameter of the nozzle ranges from about 1/16 inch to about ½ inch.

6 . The system of claim 1 , wherein the equivalent diameter of the nozzle ranges from about 1/16 inch to about ¼ inch.

7 . The system of claim 1 , wherein the precursor has a vapor pressure less than 10 Torr-absolute at the container temperature set for delivery.

8 . A system for the delivery of a liquid chemical precursor to a process tool, comprising:
the liquid chemical precursor; a container containing the liquid chemical precursor, comprises
a sidewall;
a base;
a lid; and
a head space including space above surface of the liquid chemical precursor within the container;
an inlet passing through the lid and having a nozzle inside the head space;
and
an outlet passing through the lid;
a carrier gas passing through the nozzle and impinging upon the surface of the liquid chemical precursor to produce a vapor or droplets of the chemical precursor combining with the carrier gas to form a precursor-laden fluid stream; and the precursor-laden fluid stream passing through the outlet to the process tool; wherein the liquid chemical precursor has a vapor pressure less than 50 Torr-absolute at container temperature set for delivery; and the container has a volume ranging from 100 milliliters (ml) to 10 liters.

9 . The system of claim 8 , wherein the liquid chemical precursor is selected from the group consisting of metal β-diketonates, metal β-diketoesterates, metal β-ketoiminates, metal β-diiminates, metal alkyls, metal carbonyls, alkyl metal carbonyls, metal cyclopentadienyls, metal cyclopentadienyls carbonyls, metal pyrrolyls, metal imidazolyls, metal amidinates, metal alkoxides, and combinations thereof;
wherein
ligand is selected from the group consisting of monodentate, bidentate and multidentate complexing to the metal atoms, and
the metal is selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Ce, Sm, Tb, Er, Yb, Lu, Ti, Zr, Hf, Fe, Co, Ni, Ru, Ir, Rh, Cu, Al, Sn, Pb, Sb, Bi, Te, Cr, Mo and W.

10 . The system of claim 8 , wherein the liquid chemical precursor is a metal carbonyl selected from the group consisting of dicobalt hexacarbonyl tert-butylacetylene (CCTBA), dicobalt hexacarbonyl dialkylacetylene, cyclopentadienylcobalt dicarbonyl, alkylcyclopentadienyl cobalt dicarbonyl, cyclopentadienylmanganese tricarbonyl (CpMn(CO) 3 ), alkylcyclopentadienylmanganese tricarbonyl (e.g. MeCpMn(CO) 3 , EtCpMn(CO) 3 ), cyclopentadienyltungsten tricarbonyl hydride (CpW(CO) 3 H)), alkylcyclopentadienyl tricarbonyl hydride ((RCp)W(CO) 3 H), tris(carbonyl)(alkylcyclopentadienyl)methyl tungsten ((RCp)W(CO) 3 Me), tris(carbonyl)(alkylcyclopentadienyl)ethyl tungsten ((RCp)W(CO) 3 Et), and combinations thereof.

11 . The system of claim 8 , wherein the nozzle is at a 90° angle to the lid; and tip of the nozzle is located with a distance of greater or equal to 0.5 inches from the surface of the liquid chemical precursor.

12 . The system of claim 11 , wherein the container further comprises a rate controller or a valve connected to the inlet to control flow rate of the carrier gas ranging from about 100 to about 2000 standard cubic centimeters (sccm).

13 . The system of claim 12 , wherein the nozzle has an equivalent diameter ranging from about 1/16 inch to about ½ inch, and the carrier gas at the tip of the nozzle has a Reynolds number of ≧50.

14 . The system of claim 13 wherein the flow rate of the carrier gas ranges from about 500 to about 1000 sccm, and the Reynolds number is ≧150.

15 . The system of claim 8 , wherein the liquid chemical precursor contains or forms >0.01 wt % and <20 wt % of solid or non-volatile dissolved components or impurities which are not passed through the outlet.

16 . A method for storage and delivery of a liquid chemical precursor to a process tool, comprising:
providing the liquid chemical precursor selected from the group consisting of metal β-diketonates, metal β-diketoesterates, metal β-ketoiminates, metal β-diiminates, metal alkyls, metal carbonyls, alkyl metal carbonyls, metal cyclopentadienyls, metal cyclopentadienyls carbonyls, metal pyrrolyls, metal imidazolyls, metal amidinates, metal alkoxides, and combinations thereof;
wherein
ligand is selected from the group consisting of monodentate, bidentate and multidentate complexing to the metal atoms, and
the metal is selected from the group consisting of Mg, Ca, Sr, Ba, Y, La, Ce, Sm, Tb, Er, Yb, Lu, Ti, Zr, Hf, Fe, Co, Ni, Ru, Ir, Rh, Cu, Al, Sn, Pb, Sb, Bi, Te, Cr, Mo and W;
providing a container c

Assignees

• Air Prod & Chem

Inventors

• Nehlsen James Patrick
• Birtcher Charles Michael

Classifications

• C23C16/4481 Primary

  by evaporation using carrier gas in contact with the source material (C23C16/4486 takes precedence) · CPC title

• C23C16/45563 Primary

  Gas nozzles · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title