Fabrication method of vertical type semiconductor memory apparatus
US-9196832-B2 · Nov 24, 2015 · US
US2016322425A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016322425-A1 |
| Application number | US-201615183372-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 15, 2016 |
| Priority date | Nov 13, 2013 |
| Publication date | Nov 3, 2016 |
| Grant date | — |
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A semiconductor device includes a pillar-shaped resistance-changing layer and a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer. A reset gate surrounds the reset gate insulating film, and the reset gate is electrically insulated from the pillar-shaped resistance-changing layer.
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1 . A semiconductor device comprising: a pillar-shaped resistance-changing layer; a reset gate insulating film that surrounds the pillar-shaped resistance-changing layer; and a reset gate that surrounds the reset gate insulating film, wherein the reset gate is electrically insulated from the pillar-shaped resistance-changing layer.
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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