Bonding method, bonding apparatus, and method for manufacturing substrate
US-9640507-B2 · May 2, 2017 · US
US2016315064A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016315064-A1 |
| Application number | US-201615131610-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 18, 2016 |
| Priority date | Apr 24, 2015 |
| Publication date | Oct 27, 2016 |
| Grant date | — |
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A method of operating a thermocompression bonding system is provided. The method includes the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate.
Opening claim text (preview).
What is claimed: 1 . A method of operating a thermocompression bonding system, the method comprising the steps of: bringing first conductive structures of a semiconductor element into contact with second conductive structures of a substrate in connection with a thermocompression bonding operation; and moving the semiconductor element relative to the substrate along at least one substantially horizontal direction using a motion system of at least one of the semiconductor element and the substrate. 2 . The method of claim 1 wherein the step of moving includes moving the semiconductor element using a motion system adapted to move a bonding tool carrying the semiconductor element. 3 . The method of claim 2 wherein the motion system includes a servo controlled linear motion system. 4 . The method of claim 1 wherein the step of moving includes moving the substrate using a motion system adapted to move a support structure supporting the substrate. 5 . The method of claim 4 wherein the motion system includes a servo controlled linear motion system. 6 . The method of claim 1 wherein the step of moving includes moving the semiconductor element relative to the substrate along a plurality of substantially horizontal directions. 7 . The method of claim 6 wherein movement along at least one of the plurality of substantially horizontal directions is provided using a motion system adapted to move a bonding tool carrying the semiconductor element. 8 . The method of claim 6 wherein movement along at least one of the plurality of substantially horizontal directions is provided using a motion system adapted to move a support structure supporting the substrate. 9 . The method of claim 6 wherein movement along at least one of the plurality of substantially horizontal directions is provided using a motion system adapted to move a bonding tool carrying the semiconductor element, and wherein movement along at least one of the plurality of substantially horizontal directions is provided using a motion system adapted to move a support structure supporting the substrate. 10 . The method of claim 1 wherein the step of moving is commenced after bringing first conductive structures of the semiconductor element into contact with second conductive structures of the substrate. 11 . The method of claim 1 wherein the step of moving is commenced before bringing first conductive structures of the semiconductor element into contact with second conductive structures of the substrate. 12 . The method of claim 1 wherein the at least one substantially horizontal direction includes a linear direction. 13 . The method of claim 1 wherein the at least one substantially horizontal direction includes a non-linear direction. 14 . The method of claim 1 wherein the step of moving the semiconductor element relative to the substrate includes low frequency relative movement. 15 . The method of claim 1 wherein the relative motion between the semiconductor element and the substrate varies as a function of time. 16 . The method of claim 1 wherein the relative motion between the semiconductor element and the substrate varies as a function of a z-height of a bonding tool for bonding the semiconductor element to the substrate. 17 . The method of claim 1 wherein the relative motion between the semiconductor element and the substrate varies as a function of a bond force applied by a bonding tool for bonding the semiconductor element to the substrate. 18 . The method of claim 1 wherein the relative motion between the semiconductor element and the substrate varies as a function of a temperature measured from at least one location of a bond head assembly including a bonding tool for bonding the semiconductor element to the substrate. 19 . The method of claim 1 wherein the relative motion between the semiconductor element and the substrate varies as a function of at least one of (1) time, (2) a z-height of a bonding tool for bonding the semiconductor element to the substrate, (3) a bond force applied by the bonding tool, and (4) a temperature measured from at least one location of a bond head assembly including the bonding tool. 20 . The method of claim 1 wherein the step of moving the semiconductor element relative to the substrate includes using a motion system included in a lower bond head assembly carrying the bonding tool to provide the relative movement. 21 . The method of claim 20 wherein the motion system included in the lower bond head assembly includes a piezo actuator. 22 . A thermocompression bonder comprising: a support structure for supporting a substrate; a bonding tool for bonding a semiconductor element to the substrate; and a motion system configured to provide relative movement between the semiconductor element and the substrate during a thermocompression bonding operation. 23 . The thermocompression bonder of claim 22 wherein the motion system is included in a lower bond head of the thermocompression bonder. 24 . The thermocompression bonder of claim 22 wherein the motion system includes a piezo actuator.
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