Varistor paste, optoelectronic component, method of producing a varistor paste and method of producing a varistor element

Patent metadata

Field	Value
Publication number	US-2016307674-A1
Application number	US-201415101136-A
Country	US
Kind code	A1
Filing date	Dec 2, 2014
Priority date	Dec 4, 2013
Publication date	Oct 20, 2016
Grant date	—

Abstract

A varistor paste includes a matrix material and particles embedded into the matrix material, wherein the matrix material without embedded particles has a viscosity of less than 0.8 Pa·s, and the embedded particles include varistor particles. An optoelectronic component includes an optoelectronic semiconductor chip and a varistor element connected in parallel with the optoelectronic semiconductor chip, wherein the varistor element includes a matrix material and particles embedded into the matrix material, the embedded particles include varistor particles, and the matrix material has a glass transition temperature of more than 130° C. A method of producing a varistor paste includes providing a matrix material having a viscosity of less than 0.8 Pa·s; and embedding particles into the matrix material to form a varistor paste, wherein the embedded particles include varistor particles.

First claim

1 - 15 . (canceled)

16 . A varistor paste comprising a matrix material and particles embedded into the matrix material,
wherein the matrix material without embedded particles has a viscosity of less than 0.8 Pa·s, and the embedded particles comprise varistor particles.

17 . The varistor paste as claimed in claim 16 , wherein the matrix material without embedded particles has a viscosity of less than 0.5 Pa·s.

18 . The varistor paste as claimed in claim 16 , wherein the matrix material comprises a resin, a silicone, an epoxy resin, an acrylate, a polyurethane or a cyanate ester.

19 . The varistor paste as claimed in claim 16 , wherein the matrix material is a one-component matrix material.

20 . The varistor paste as claimed in claim 16 ,
wherein 90% by volume of the embedded particles have a size of less than 20 μm, and 50% by volume of the embedded particles have a size of less than 12 μm.

21 . The varistor paste as claimed in claim 16 , wherein the embedded particles make up at least 50% by weight of the varistor paste.

22 . The varistor paste as claimed in claim 16 , wherein the varistor paste has a viscosity of less than 200 Pa·s.

23 . The varistor paste as claimed in claim 16 , wherein the embedded particles at least comprise one of electrically conductive particles comprising Al, Cu, Ag, Au, Pd, other metals, or electrically conductive particles comprising graphite, conductive carbon black, graphene or carbon nanotubes.

24 . The varistor paste as claimed in claim 23 , wherein the electrically conductive particles are less than 20% by weight of the embedded particles.

25 . The varistor paste as claimed in claim 16 , wherein the varistor paste has a thixotropic index of not more than 10.

26 . An optoelectronic component comprising an optoelectronic semiconductor chip and a varistor element connected in parallel with the optoelectronic semiconductor chip,
wherein the varistor element comprises a matrix material and particles embedded into the matrix material, the embedded particles comprise varistor particles, and the matrix material has a glass transition temperature of more than 130° C.

27 . A method of producing a varistor paste comprising:
providing a matrix material having a viscosity of less than 0.8 Pa·s; and embedding particles into the matrix material to form a varistor paste, wherein the embedded particles comprise varistor particles.

28 . A method of producing a varistor element comprising:
producing a varistor paste according to the method as claimed in claim 27 ; shaping a varistor element from the varistor paste; and curing the varistor element.

29 . The method as claimed in claim 28 , wherein the varistor element is shaped by a needle metering, non-contact needle metering, stamp printing, pad printing, screen printing or stencil printing.

30 . The method as claimed in claim 28 , wherein the varistor element is cured by application of temperature or irradiation with UV light, microwave radiation or electron radiation.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Hoehn Klaus
• Haiberger Luca
• Wicke Markus

Classifications

• H10W72/354

  comprising polymers · CPC title

• H10W72/325

  Die-attach connectors having a filler embedded in a matrix · CPC title

• H10W90/00

  Package configurations · CPC title

• H01C17/0652

  containing carbon or carbides · CPC title

• H01C7/1006 Primary

  Thick film varistors · CPC title