Multifunctional wafer pretreatment chamber and chemical vapor deposition device
US-2024337011-A1 · Oct 10, 2024 · US
US2016289825A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016289825-A1 |
| Application number | US-201615089702-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 4, 2016 |
| Priority date | Apr 6, 2015 |
| Publication date | Oct 6, 2016 |
| Grant date | — |
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Disclosed is a carbon thin-film device and method for manufacturing the same. The method includes forming a functional group on a surface of a substrate and functionalizing the substrate, and depositing a carbon thin film through ALD on the substrate in which the functional group is formed.
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What is claimed is: 1 . A method of manufacturing a carbon thin-film device, the method comprising: forming a functional group on a surface of a substrate to functionalize the substrate, and depositing a carbon thin film through atomic layer deposition on the substrate on which the functional group is formed. 2 . The method of claim 1 , wherein the functional group comprises at least one selected from oxygen group, hydroxyl group, and amino group. 3 . The method of claim 1 , wherein the functionalizing of the substrate comprises: supplying a solution, which is made by mixing sulfuric acid and hydrogen peroxide water, to the substrate to form a hydroxyl group on the substrate. 4 . The method of claim 1 , wherein the functionalizing of the substrate comprises: treating the substrate with oxygen plasma to form an oxygen group on the substrate. 5 . The method of claim 1 , wherein the functionalizing of the substrate comprises: forming an adsorption layer, which comprises the functional group, on the substrate. 6 . The method of claim 5 , wherein the adsorption layer is formed of a single atomic layer or a single molecular layer. 7 . The method of claim 5 , wherein the functionalizing of the substrate comprises: forming the functional group on the substrate to allow oxygen or nitrogen atoms of the adsorption layer to be covalent-bonded with atoms of the substrate. 8 . The method of claim 5 , wherein the depositing of the carbon thin film on the substrate comprises: forming the carbon thin film on the substrate to allow carbon atoms of a basal layer of the carbon thin film to be covalent-bonded with oxygen or nitrogen atoms of the adsorption layer. 9 . The method of claim 1 , wherein the depositing of the carbon thin film on the substrate comprises: repeating unit cycles in a number of times, wherein the unit cycle comprises: supplying halocarbon as carbon precursors to the substrate; supplying a purge gas to the substrate to purge the substrate; supplying a reaction gas to the substrate; and supplying a purge gas to the substrate to purge the substrate, wherein a supply time of the halocarbon at the first unit cycle is longer than a supply time of the halocarbon at the unit cycle after the second unit cycle. 10 . The method of claim 9 , wherein the reaction gas has larger bonding energy to halogen atoms of the halocarbon than to carbon atoms of the halocarbon. 11 . The method of claim 9 , wherein the halocarbon is carbon tetrabromide (CBr 4 ), wherein the reaction gas is hydrogen gas or hydrogen plasma. 12 . The method of claim 1 , further comprising: pre-supplying halocarbon to the substrate, on which the functional group is formed, between the functionalizing of the substrate and the depositing of the carbon thin film on the substrate. 13 . The method of claim 12 , wherein the halocarbon is carbon tetrabromide (CBr 4 ). 14 . The method of claim 12 , wherein the pre-supplying of the halocarbon comprises: supplying the halocarbon to the substrate, on which the functional group is formed, for 30 seconds to 5 minutes. 15 . The method of claim 1 , wherein the carbon thin film is formed at deposition temperature of 200 to 450′C. 16 . A carbon thin-film device comprising: a substrate; an adsorption layer on the substrate; and a carbon layer on the adsorption layer, wherein the adsorption layer comprises a functional group comprising at least one selected from oxygen and nitrogen atoms. 17 . The carbon thin-film device of claim 16 , wherein the adsorption layer is formed of a single layer with oxygen or nitrogen atoms. 18 . The carbon thin-film device of claim 16 , wherein the oxygen or nitrogen atoms of the adsorption layer is covalent-bonded with carbon atoms of a basal layer of the carbon layer. 19 . The carbon thin-film device of claim 18 , wherein the oxygen or nitrogen atoms of the adsorption layer is covalent-bonded with atoms of a surface layer of the substrate. 20 . A carbon nanowire comprising: a nanowire; a carbon layer wrapping the nanowire; and an adsorption layer between the nanowire and the carbon layer, wherein the adsorption layer comprises a functional group, the functional group comprising at least one selected from oxygen and nitrogen atoms.
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