Surface emitting semiconductor laser device

Patent metadata

Field	Value
Publication number	US-2016276808-A1
Application number	US-201615066252-A
Country	US
Kind code	A1
Filing date	Mar 10, 2016
Priority date	Mar 19, 2015
Publication date	Sep 22, 2016
Grant date	—

Abstract

There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

First claim

What is claimed is:

1 . A surface emitting semiconductor laser comprising:
a substrate; and a semiconductor layer including:
a first semiconductor multilayer film including a plurality of first sets, each set being formed of two layers different from each other in refractive index and thermal conductivity; and
a second semiconductor multilayer film the second semiconductor multilayer including a plurality of second sets, each set being formed of two layers different from each other in refractive index and thermal conductivity; and
an active layer provided between the first semiconductor multilayer film and the second semiconductor multilayer film,
wherein the first semiconductor multilayer film, the second semiconductor multilayer film, and the active layer constitutes a resonator, at least one set in the plurality of first sets and the plurality of second sets is composed of a first layer having a first thermal conductivity, a first composition inclination layer, a second layer having a second thermal conductivity lower than the first thermal conductivity and a second composition inclination layer, and an optical film thickness of the first layer is (2m+1)λ/4, wherein λ is an oscillation wavelength of the resonator and m is an integer, and a total optical film thickness of the first composition inclination layer, the second layer and the second composition inclination layer is (2n+1)λ/4, wherein λ is the oscillation wavelength of the resonator and n is an integer equal to or less than m.

2 . The surface emitting semiconductor laser device according to claim 1 ,
wherein the substrate is an N-type into which an N-type impurity is doped, the first semiconductor multilayer film is an N-type into which an N-type impurity is doped, at least one set in the plurality of the first sets is composed of a first layer having the first thermal conductivity, a first composition inclination layer, a second layer having the second thermal conductivity and a second composition inclination layer, an optical film thickness of the first layer is (2m+1)λ/4, wherein λ is an oscillation wavelength of the resonator and m is an integer, and a total optical film thickness of the first composition inclination layer, the second layer and the second composition inclination layer is (2n+1)λ/4, wherein λ is the oscillation wavelength of the resonator and n is an integer equal to or less than m, and the second semiconductor multilayer film is a P-type into which a P-type impurity is doped, and at least one set in the plurality of the second sets is composed of a third layer having a third thermal conductivity, a third composition inclination layer, a fourth layer having a fourth thermal conductivity lower than the third thermal conductivity and a fourth composition inclination layer, and a total optical film thickness of the third layer, the third composition inclination layer, the fourth layer and the fourth composition inclination layer is an integer multiple of λ/2, wherein λ is an oscillation wavelength of the resonator.

3 . The surface emitting semiconductor laser device according to claim 1 ,
wherein antinodes and nodes of light intensity distribution in an inside of at least one of the first semiconductor multilayer film and the second semiconductor multilayer film are positioned at an interface between the first layer and the first composition inclination layer or at an interface between the first layer and the second composition inclination layer, but the antinodes and the nodes are not positioned either at an interface between the second layer and the first composition inclination layer and or at an interface between the second layer and the second composition inclination layer.

4 . The surface emitting semiconductor laser device according to claim 2 ,
wherein antinodes and nodes of light intensity distribution in an inside of at least one of the first semiconductor multilayer film and the second semiconductor multilayer film are positioned at an interface between the first layer and the first composition inclination layer or at an interface between the first layer and the second composition inclination layer, but the antinodes and the nodes are not positioned either at an interface between the second layer and the first composition inclination layer and or at an interface between the second layer and the second composition inclination layer.

5 . The surface emitting semiconductor laser device according to claim 1 ,
wherein each of an optical film thickness of the first composition inclination layer and an optical film thickness of the second composition inclination layer is 10 nm or more and 18 nm or less.

6 . The surface emitting semiconductor laser device according to claim 2 ,
wherein each of an optical film thickness of the first composition inclination layer and an optical film thickness of the second composition inclination layer is 10 nm or more and 18 nm or less.

7 . The surface emitting semiconductor laser device according to claim 3 ,
wherein each of an optical film thickness of the first composition inclination layer and an optical film thickness of the second composition inclination layer is 10 nm or more and 18 nm or less.

8 . The surface emitting semiconductor laser device according to claim 4 ,
wherein each of an optical film thickness of the first composition inclination layer and an optical film thickness of the second composition inclination layer is 10 nm or more and 18 nm or less.

Assignees

• Fuji Xerox Co Ltd

Inventors

• Hayakawa Junichiro
• Murakami Akemi
• Kondo Takashi
• Takeda Kazutaka
• Jogan Naoki
• Sakurai Jun

Classifications

• H01S5/18361

  Structure of the reflectors, e.g. hybrid mirrors · CPC title

• H01S5/3432

  the whole junction comprising only (AI)GaAs · CPC title

• H01S5/34353

  based on (AI)GaAs · CPC title

• H01S5/02461

  Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity · CPC title

• H01S5/18358

  containing spacer layers to adjust the phase of the light wave in the cavity · CPC title