Semiconductor laser element and method of manufacturing semiconductor laser element

Patent metadata

Field	Value
Publication number	US-9478944-B2
Application number	US-201414460090-A
Country	US
Kind code	B2
Filing date	Aug 14, 2014
Priority date	Sep 4, 2007
Publication date	Oct 25, 2016
Grant date	Oct 25, 2016

Abstract

A semiconductor laser element includes: a window region including a disordered portion formed by diffusion of a group-III vacancy, the diffusion promoted by providing on the window region a promoting film that absorbs a predetermined atom; a non-window region including an active layer of a quantum well structure; and a difference equal to or larger than 50 meV between an energy band gap in the window region and an energy band gap in the non-window region.

First claim

What is claimed is:

1. A semiconductor laser element, comprising:
an active layer;
a window region including a disordered portion formed by diffusion of a group-III vacancy, the window region including an impurity free disordered portion of the active layer;
a non-window region including a portion of the active layer having a quantum well structure;
a layer near the active layer, the layer being doped with a p-impurity an impurity that preferentially substitutes a group-V site;
a layer including zinc and being formed above the layer near the active layer, and
a contact layer made of only GaAs and dopants and formed above the active layer to inject a carrier into the active layer, wherein
the GaAs contact layer includes the layer including zinc, and
the GaAs contact layer includes a first GaAs contact layer doped with the p-impurity that preferentially substitutes the group-V site and a second GaAs contact layer which is the layer including zinc and being formed above the first GaAs contact layer.

2. The semiconductor laser element according to claim 1 , wherein the layer including zinc is formed in the non-window region.

3. The semiconductor laser element according to claim 1 , further comprising a current non-injecting layer that is provided between the first GaAs contact layer and the second GaAs contact layer, constricts a current injected from outside, and supplies the current to the active layer.

4. The semiconductor laser element according to claim 1 , wherein the impurity that preferentially substitutes the group-V site is carbon.

5. The semiconductor laser element according to claim 1 , wherein the active layer does not include zinc in the non-window region.

6. The semiconductor laser element according to claim 1 , wherein a difference between an energy band gap in the window region and an energy band gap in the non-window region is equal to or larger than 50 meV.

7. The semiconductor laser element according to claim 1 , wherein the impurity that preferentially substitutes the group-V site has a diffusion coefficient equal to or smaller than 3×10 −14 cm 2 /s at a thermal treatment temperature at which the disordered portion is formed.

8. The semiconductor laser element according to claim 1 , further comprising a guide layer being formed above the active layer, the guide layer is doped with the impurity that preferentially substitutes the group-V site at least at a side of the active layer.

9. The semiconductor laser element according to claim 8 , wherein a doping concentration of the impurity that preferentially substitutes the group-V site in the guide layer is 0.1 to 1.0×10 17 cm 3 .

10. The semiconductor laser element according to claim 1 , wherein a thickness between the layer including zinc of the GaAs contact layer and the active layer is equal to or greater than 1400 nanometers.

11. The semiconductor laser element according to claim 10 , further comprising a cladding layer being dope with the p-impurity that preferentially substitutes the group-V site and being disposed between the layer including zinc of the GaAs contact layer and the active layer, wherein a thickness of the cladding layer is equal to or greater than 1 μm.

Assignees

• Furukawa Electric Co Ltd

Inventors

• Taniguchi Hidehiro
• Ishii Hirotatsu
• Namegaya Takeshi

Classifications

• H01S5/3223

  IV compounds · CPC title

• H01S5/3054

  p-doping · CPC title

• H01S5/162

  with window regions made by diffusion or disordening of the active layer · CPC title

• H01S5/168

  with window regions comprising current blocking layers · CPC title

• H01S5/164 Primary

  with window regions comprising semiconductor material with a wider bandgap than the active layer · CPC title