Dicing method for power transistors
US-2016204074-A1 · Jul 14, 2016 · US
Production method for semiconductor element, and semiconductor element
US2016268167A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016268167-A1 |
| Application number | US-201415032907-A |
| Country | US |
| Kind code | A1 |
| Filing date | Oct 24, 2014 |
| Priority date | Nov 6, 2013 |
| Publication date | Sep 15, 2016 |
| Grant date | — |
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- Title
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Abstract
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A production method for a semiconductor element ( 10 ) includes: a semiconductor element forming step of forming the semiconductor element ( 10 ) including a dielectric film ( 3 ); a dicing region forming step of forming dicing regions ( 11 ) by removing the dielectric film ( 3 ) in partition regions that partition the semiconductor element ( 10 ); and a dicing step of dicing the dicing regions ( 11 ).
First claim
Opening claim text (preview).
1 . A production method for a semiconductor element comprising: a semiconductor element forming step of forming a plurality of semiconductor elements by forming a dielectric film on a GaN-based semiconductor film formed on a substrate; a dicing region forming step of forming groove-shaped dicing regions by removing the dielectric film in partition regions that partition the plurality of semiconductor elements; and a dicing step of separating the plurality of semiconductor elements from each other by dicing the dicing regions. 2 . The production method for a semiconductor element according to claim 1 , wherein the dielectric film remains at the both side portions of the partition region in the dicing region forming step. 3 . The production method for a semiconductor element according to claim 1 wherein a dicing blade is used in the dicing step. 4 . The production method for a semiconductor element according to claim 3 , wherein the dicing blade includes at least a uniaxial rotary blade that cuts the GaN-based semiconductor film and a biaxial rotary blade that cuts the substrate, and wherein the dicing is performed by a step cut method in the dicing step. 5 . A semiconductor element that is separated from a semiconductor wafer, the semiconductor element comprising: a GaN-based semiconductor film formed on a substrate; and a dielectric film formed on the GaN-based semiconductor film, wherein the semiconductor element is separated from the semiconductor wafer by dicing dicing regions from which the dielectric film is removed.
Assignees
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Classifications
Separation by peeling · CPC title
used to protect an active side of a device or wafer · CPC title
used during dicing or grinding · CPC title
Wafer tapes, e.g. grinding or dicing support tapes · CPC title
between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title
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- What does patent US2016268167A1 cover?
- A production method for a semiconductor element ( 10 ) includes: a semiconductor element forming step of forming the semiconductor element ( 10 ) including a dielectric film ( 3 ); a dicing region forming step of forming dicing regions ( 11 ) by removing the dielectric film ( 3 ) in partition regions that partition the semiconductor element ( 10 ); and a dicing step of dicing the dicing regions…
- Who is the assignee on this patent?
- Sharp Kk
- What technology area does this patent fall under?
- Primary CPC classification H10P54/00. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).