Wafer processing method
US-2024395620-A1 · Nov 28, 2024 · US
Method of processing single-crystal substrate
US2016268155A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016268155-A1 |
| Application number | US-201615068141-A |
| Country | US |
| Kind code | A1 |
| Filing date | Mar 11, 2016 |
| Priority date | Mar 12, 2015 |
| Publication date | Sep 15, 2016 |
| Grant date | — |
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- Title
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Abstract
Official abstract text for this publication.
A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a protective member to the substrate before or after the shield tunnel forming step, and a grinding step of holding the protective member on the substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the substrate to bring the substrate to a predetermined thickness, and dividing the substrate along the division lines along which the shield tunnels have been formed.
First claim
Opening claim text (preview).
What is claimed is: 1 . A method of processing a single-crystal substrate to divide the single-crystal substrate along a plurality of preset division lines, comprising: a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the single-crystal substrate to the single-crystal substrate along the division lines to form shield tunnels, each shield tunnel including a fine hole and an amorphous region shielding the fine hole, in the single-crystal substrate along the division lines; a protective member adhering step of adhering a protective member to the single-crystal substrate before or after the shield tunnel forming step; and a grinding step of holding the protective member on the single-crystal substrate, to which the shield tunnel forming step and the protective member adhering step are performed, on a chuck table of a grinding apparatus, grinding a reverse surface of the single-crystal substrate to bring the single-crystal substrate to a predetermined thickness, and dividing the single-crystal substrate along the division lines along which the shield tunnels have been formed. 2 . The method of processing a single-crystal substrate according to claim 1 , wherein the pulsed laser beam used in the shield tunnel forming step has a peak energy density set to a value in a range from 1 TW/cm 2 to 100 TW/cm 2 .
Assignees
Inventors
Classifications
Separation by peeling · CPC title
used to protect an active side of a device or wafer · CPC title
used during dicing or grinding · CPC title
Cutting or separating of wafers, substrates or parts of devices · CPC title
- H10P72/7402Primary
Wafer tapes, e.g. grinding or dicing support tapes · CPC title
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- What does patent US2016268155A1 cover?
- A method of dividing a single-crystal substrate along a plurality of preset division lines, includes a shield tunnel forming step of applying a pulsed laser beam having such a wavelength that permeates through the substrate along the division lines to form shield tunnels, each including a fine hole and an amorphous region shielding the fine hole, a protective member adhering step of adhering a …
- Who is the assignee on this patent?
- Disco Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P72/7402. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Sep 15 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).