Cross-flow reactor and method

Patent metadata

Field	Value
Publication number	US-2016268102-A1
Application number	US-201514645234-A
Country	US
Kind code	A1
Filing date	Mar 11, 2015
Priority date	Mar 11, 2015
Publication date	Sep 15, 2016
Grant date	—

Abstract

Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.

First claim

What is claimed is:

1 . A gas-phase reactor comprising:
a cross-flow reaction chamber comprising a tapered top surface and a bottom surface comprising a portion of a base plate and a portion of a top surface of a susceptor; a gas diffuser coupled to an inlet of the reaction chamber; and an exhaust conduit coupled to the outlet of the reaction chamber.

2 . The gas-phase reactor of claim 1 , wherein a distance between the tapered top surface and the bottom surface is greater proximate the inlet relative to a distance between the tapered top surface and the bottom surface at the outlet.

3 . The gas-phase reactor of claim 1 , wherein a distance between the tapered top surface and the bottom surface is greater proximate the outlet relative to a distance between the tapered top surface and the bottom curface at the inlet.

4 . The gas-phase reactor of claim 1 , wherein the tapered surface comprises a linearly tapered surface.

5 . The gas-phase reactor of claim 1 , wherein a distance between the tapered top surface and the bottom surface proximate the inlet ranges between about 1 mm and about 10 mm.

6 . The gas-phase reactor of claim 1 , wherein a distance between the tapered top surface and the bottom surface proximate the outlet ranges between about 1 mm and about 10 mm.

7 . The gas-phase reactor of claim 1 , further comprising at least one spacer between the susceptor and the base plate.

8 . The gas-phase reactor of claim 7 , wherein the at least one spacer comprises a pin.

9 . The gas-phase reactor of claim 1 , comprising a vertical gap section between the susceptor and the base plate.

10 . The gas-phase reactor of claim 9 , further comprising a horizontal gap section between the susceptor and the base plate.

11 . A gas-phase reactor comprising:
a cross-flow reaction chamber comprising a top surface, a side surface, and a bottom surface, wherein a distance between the top surface and the bottom surface tapers from an inlet of the reaction chamber to an outlet of the reaction chamber; a gas diffuser coupled to the inlet; and an exhaust coupled to the outlet.

12 . The gas-phase reactor of claim 11 , wherein the gas-phase reactor comprises an atomic layer deposition reactor.

13 . The gas-phase reactor of claim 11 , wherein the bottom surface comprises a portion of a top surface of a susceptor and a portion of a base plate.

14 . The gas-phase reactor of claim 13 , comprising a gap between the susceptor and the base plate.

15 . The gas-phase reactor of claim 11 , comprising a vertical gap and a horizontal gap between the susceptor and the base plate.

16 . The gas-phase reactor of claim 11 , further comprising a spacer between the susceptor and the base plate.

17 . The gas-phase reactor of claim 11 , wherein the top surface is tapered.

18 . The gas-phase reactor of claim 11 , wherein a distance between the tapered top surface and the bottom surface is greater proximate the inlet relative to a distance between the tapered top surface and bottom surface at the outlet.

19 . The gas-phase reactor of claim 11 , wherein a distance between the tapered top surface and bottom surface is greater proximate the outlet relative to a distance between the tapered top surface and the bottom surface at the inlet.

20 . A gas-phase reactor system comprising:
a gas-phase reactor comprising a cross-flow reaction chamber, wherein a vertical height of the reaction chamber is tapered from an inlet to an outlet; and a lower chamber, wherein the system comprises a gap between the reaction chamber and the lower chamber.

21 . The gas-phase reactor of claim 20 , further comprising a spacer to define the gap.

Assignees

• Asm Ip Holding Bv

Inventors

• White Carl Louis
• Shero Eric James
• Verghese Mohith

Classifications

• B08B7/00

  Cleaning by methods not provided for in a single other subclass or a single group in this subclass · CPC title

• C23C16/45544

  characterized by the apparatus · CPC title

• H01J37/32449 Primary

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/4583

  the substrate being supported substantially horizontally · CPC title

• H01J37/32816

  Pressure · CPC title