Methods for depositing metal on a reactive metal film
US-2015348836-A1 · Dec 3, 2015 · US
US2016254103A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016254103-A1 |
| Application number | US-201615151088-A |
| Country | US |
| Kind code | A1 |
| Filing date | May 10, 2016 |
| Priority date | Jun 25, 2010 |
| Publication date | Sep 1, 2016 |
| Grant date | — |
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An electrode for an energy storage device including a Zn layer or Zn alloy layer, a Ni layer, and a Sn layer or Sn alloy layer formed by plating on a connecting terminal part of a positive electrode composed of Al so that the resistance value at the contacting point is reduced and the voltage of the energy storage device can be effectively supplied without any drop. Accordingly, this electrode can be soldered to a Cu negative electrode, which is composed of metal that is different species from Al, through a Sn layer or a Sn alloy layer so that jointing strength of the Al positive electrode and the Cu negative electrode can be enhanced. The contacting area is increased in comparison with the conventional jointing by spot-welding or conventional fastening by a bolt so that the resistance value at the contacting point is reduced.
Opening claim text (preview).
1 . An electrode for an energy storage device, characterized by including a Zn layer or a Zn alloy layer, a Ni layer, and a Sn layer or a Sn alloy layer all formed on a positive electrode containing Al by plating. 2 . The electrode for energy storage device according to claim 1 characterized in that the positive electrode is such that the Zn layer or the Zn alloy layer is formed on Al, the Ni layer is formed on the Zn layer or the Zn alloy layer, and the Sn layer or the Sn alloy layer is formed on the Ni layer. 3 . The electrode for energy storage device according to claim 1 characterized in that the Zn layer or the Zn alloy layer has a thickness of 0.05 through 0.1 μm. 4 . The electrode for energy storage device according to claim 1 characterized in that the Ni layer has a thickness of 1 through 3 μm. 5 . The electrode for energy storage device according to claim 1 characterized in that the Sn layer or the Sn alloy layer has a thickness of 5 through 15 μm. 6 . The electrode for energy storage device according to claim 2 characterized in that the Zn layer or the Zn alloy layer has a thickness of 0.05 through 0.1 μm. 7 . The electrode for energy storage device according to claim 2 characterized in that the Ni layer has a thickness of 1 through 3 μm. 8 . The electrode for energy storage device according to claim 2 characterized in that the Sn layer or the Sn alloy layer has a thickness of 5 through 15 μm. 9 . An electrode for an energy storage device, comprising: (a) a positive electrode including: (i) a layer of plating of Zn or a Zn alloy on an electrode containing Al; (ii) a layer of Ni plating on the layer of plating of Zn or Zn alloy; and (iii) a layer of plating of Sn or Sn alloy on the layer of plating of Ni; and (b) a negative electrode containing Cu, connected to the positive electrode by soldering. 10 . The electrode for energy storage device according to claim 9 characterized in that the layer of Zn or Zn alloy has a thickness of 0.05 through 0.1 μm. 11 . The electrode for energy storage device according to claim 9 characterized in that the layer of Ni has a thickness of 1 through 3 μm. 12 . The electrode for energy storage device according to claim 9 characterized in that the layer of Sn or Sn alloy has a thickness of 5 through 15 μm.
characterised by the material of the leads or tabs · CPC title
Coating with alloys · CPC title
Two or more layers only obtained by electroless plating · CPC title
characterised by their material · CPC title
with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC] · CPC title
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