Device structure with negative resistance characteristics

Patent metadata

Field	Value
Publication number	US-2016225919-A1
Application number	US-201514612639-A
Country	US
Kind code	A1
Filing date	Feb 3, 2015
Priority date	Feb 3, 2015
Publication date	Aug 4, 2016
Grant date	—

Abstract

Device structures that exhibit negative resistance characteristics and fabrication methods for such device structures. A signal is applied to a metal layer of a metal-insulator-semiconductor capacitor to cause a breakdown of an insulator layer of the metal-insulator-semiconductor capacitor at a location. The breakdown at the location of the insulator layer causes the metal-insulator-semiconductor capacitor to exhibit negative resistance. The metal layer may be comprised of a polycrystalline metal. A grain of the polycrystalline metal may penetrate through the insulator layer and into a portion of a substrate at the location of the breakdown.

First claim

What is claimed is:

1 . A device structure formed using a substrate comprised of a semiconductor, the device structure comprising:
a first layer comprised of a polycrystalline metal, the polycrystalline metal including plurality of grains; and a second layer comprised of an electrical insulator, the second layer positioned between the first layer and a portion of the substrate, wherein at least one of the grains penetrates through the second layer and into the portion of the substrate.

2 . The device structure of claim 1 wherein the first layer and the second layer are positioned within a trench having a sidewall that extends into the substrate from a top surface of the substrate.

3 . The device structure of claim 2 wherein the second layer is positioned on the sidewall of the trench, and the first layer is a plug positioned inside the trench.

4 . The device structure of claim 1 wherein the first layer and the second layer are positioned on a top surface of the substrate.

5 . The device structure of claim 1 wherein the polycrystalline metal of the first layer comprises polycrystalline copper.

6 . The device structure of claim 5 wherein the polycrystalline copper has a layer thickness in a first range of 1 μm to 15 μm, and a grain size in a second range of 1 μm to 5 μm.

7 . The device structure of claim 5 wherein the electrical insulator of the second layer comprises silicon dioxide, and the silicon dioxide has a thickness in a range of 100 nm to 1000 nm.

8 . The device structure of claim 1 wherein the device structure includes the portion of the substrate.

9 . The device structure of claim 1 further comprising:
a third layer positioned between the first layer and the second layer, the third layer comprised of tantalum, tantalum nitride, titanium, titanium nitride, or a combination thereof,
wherein the at least one of the grains also penetrates through the third layer.

10 . The device structure of claim 1 wherein the at least one of the grains penetrates through the second layer at a location of the insulator layer exhibiting breakdown.

11 . The device structure of claim 1 wherein the device structure exhibits a negative resistance over a range of currents when biased in inversion mode in an operating circuit.

12 . The device structure of claim 11 wherein a voltage-current curve characterizing the negative resistance has a peak-to-valley ratio in a range from 1.25 to 4 at room temperature.

13 . The device structure of claim 1 wherein the device structure is a functioning device element in an integrated circuit when biased in inversion mode.

14 . A method for forming a device structure, the method comprising:
fabricating a metal-insulator-semiconductor capacitor using a substrate comprised of a semiconductor; and applying a signal to a metal layer of the metal-insulator-semiconductor capacitor to cause a breakdown of an insulator layer of the metal-insulator-semiconductor capacitor at a location and thereby form the device structure, wherein the breakdown at the location of the insulator layer causes the device structure to exhibit negative resistance.

15 . The method of claim 14 wherein applying the signal to the metal-insulator-semiconductor capacitor comprises:
programming the metal-insulator-semiconductor capacitor with biasing under accumulation mode.

16 . The method of claim 14 wherein the signal comprises a ramped programming voltage, and applying the signal to the metal-insulator-semiconductor capacitor comprises:
directing the ramped programming voltage to the metal layer of the metal-insulator-semiconductor capacitor.

17 . The method of claim 14 wherein the signal comprises a pulsed programming voltage, and applying the signal to the metal-insulator-semiconductor capacitor comprises:
directing the pulsed programming voltage to the metal layer of the metal-insulator-semiconductor capacitor.

18 . The method of claim 14 wherein fabricating the metal-insulator-semiconductor capacitor comprises:
forming a trench in the substrate;
forming the insulator layer on a sidewall of the trench; and
forming the metal layer inside the trench,
wherein the insulator layer is arranged between the metal layer and the substrate adjacent to the trench, and the location of the breakdown is a position along the sidewall of the trench.

19 . The method of claim 18 wherein the metal layer is comprised of a polycrystalline metal, and applying the signal to the metal layer of the metal-insulator-semiconductor capacitor comprises:
causing a grain of the polycrystalline metal to penetrate through the insulator layer and into a portion of the substrate at the location of the breakdown.

20 . The method of claim 14 wherein the metal layer is comprised of a polycrystalline metal, and applying the signal to the metal layer of the metal-insulator-semiconductor capacitor comprises:
causing a grain of the polycrystalline metal to penetrate through the insulator layer and into a portion of the substrate at the location of the breakdown.

Assignees

• Globalfoundries Inc

Inventors

• Chen Fen
• Graas Carole D
• Kane Terence L
• Shinosky Michael A

Classifications

• H10D64/693

  the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials · CPC title

• H10D64/665

  the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671) · CPC title

• H10D1/665 Primary

  Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors · CPC title

• H10D1/66 Primary

  Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors · CPC title

• H01L29/32

  Electricity · mapped topic