Reactive ultraviolet thermal processing of low dielectric constant materials

Patent metadata

Field	Value
Publication number	US-2016138160-A1
Application number	US-201414546990-A
Country	US
Kind code	A1
Filing date	Nov 18, 2014
Priority date	Nov 18, 2014
Publication date	May 19, 2016
Grant date	—

Abstract

Various embodiments herein relate to methods and apparatus for preparing a low-k dielectric material on a semiconductor substrate. The dielectric material may include porogens distributed throughout a structural matrix. A reactive ultraviolet thermal processing operation is performed to promote removal of the porogens from the dielectric material. By flowing a weak oxidizer such as carbon dioxide into the reaction chamber during UV exposure, the rate at which the porogens are removed can be enhanced in a controllable manner.

First claim

What is claimed is:

1 . A method of preparing a film on a substrate, the method comprising:
receiving the substrate in a processing chamber, the substrate having the film thereon, wherein the film comprises a carbon-containing dielectric film comprising porogens and a structure former, the film having a first dielectric constant; flowing a processing gas into the reaction chamber and exposing the substrate to the flow of processing gas, wherein the processing gas comprises carbon dioxide and an inert carrier gas; exposing the substrate and the processing gas to ultraviolet (UV) radiation, wherein the UV radiation comprises wavelengths that result in photodissociation of a portion of the carbon dioxide in the processing gas to thereby form carbon monoxide and oxygen radicals; and reacting the film on the substrate with the oxygen radicals to thereby remove the porogens from the film, thereby reducing the dielectric constant of the film to a second dielectric constant.

2 . The method of claim 1 , wherein the UV radiation comprises wavelengths between about 185-230 nm.

3 . The method of claim 2 , wherein the UV radiation comprises wavelengths between about 190-210 nm.

4 . The method of claim 1 , wherein a partial pressure of carbon dioxide in the reaction chamber is between about 0.1-10 T.

5 . The method of claim 4 , wherein the partial pressure of carbon dioxide in the reaction chamber is between about 1-2 T.

6 . The method of claim 1 , wherein the processing gas comprises between about 5-30% carbon dioxide, as measured by volumetric flow rates.

7 . The method of claim 6 , wherein the processing gas comprises between about 10-25% carbon dioxide, as measured by volumetric flow rates.

8 . The method of claim 1 , wherein the second dielectric constant is between about 2.2-2.25.

9 . The method of claim 1 , wherein the processing gas does not comprise molecular oxygen (O 2 ).

10 . The method of claim 9 , wherein the processing gas does not comprise any of the following species: nitrogen dioxide (NO 2 ), nitric oxide (NO), ozone (O 3 ), and hydrogen peroxide (H 2 O 2 ).

11 . The method of claim 1 , wherein exposing the substrate and the processing gas to UV radiation comprises performing a staged curing operation, wherein UV conditions exposed to the substrate during a first stage are different from UV conditions exposed to the substrate during a second stage.

12 . The method of claim 1 , wherein the reaction chamber comprises multiple stations for simultaneously processing multiple substrates.

13 . The method of claim 12 , wherein the reaction chamber comprises at least a first UV radiation source and a second UV radiation source, the first UV radiation source providing UV radiation to a first station and the second UV radiation source providing UV radiation to a second station, the method further comprising modulating at least one of the first and second UV radiation sources to independently modulate the photodissociation of carbon dioxide in the first and second stations.

14 . The method of claim 13 , wherein modulating at least one of the first and second UV radiation sources comprises changing a range of wavelengths exposed to the substrate from at least one of the first and second UV radiation sources.

15 . The method of claim 12 , wherein the reaction chamber comprises at least a first UV radiation source for providing UV radiation to a first station and a second UV radiation source for providing UV radiation to a second station, wherein the first UV radiation source exposes the substrate to radiation at wavelengths that photodissociate carbon dioxide, and wherein the second UV radiation source exposes the substrate to radiation at wavelengths that do not substantially photodissociate carbon dioxide.

16 . The method of claim 1 , wherein the film has a thickness of about 200 nm or less.

17 . The method of claim 1 , wherein the photodissociation of carbon dioxide preferentially occurs proximate the substrate as compared to locations in the reaction chamber removed from the substrate.

18 . The method of claim 17 , wherein during exposing the substrate and processing gas to UV radiation, there is a temperature differential of at least about 150° C. between the substrate and a window through which the UV radiation passes before reaching the substrate.

19 . A method comprising:
receiving a substrate in a processing chamber, the substrate having a film thereon, wherein the film comprises porogens and a structure former; and exposing the substrate to a processing gas while exposing the substrate to ultraviolet (UV) radiation to thereby remove the porogen, wherein the processing gas comprises an inert carrier gas and between about 5-30% carbon dioxide, as measured by volumetric flow rate.

20 . The method of claim 19 , wherein the UV radiation comprises wavelengths between about 185-230 nm.

21 . The method of claim 19 , wherein the processing gas is substantially free of molecular oxygen.

22 . An apparatus for preparing low-k dielectric films, the apparatus comprising:
a reaction chamber; a substrate support for supporting a substrate in the reaction chamber; an ultraviolet (UV) radiation source configured to deliver UV radiation to the substrate on the substrate support; an inlet for providing processing gas to the reaction chamber and an outlet for removing material from the reaction chamber; and a controller comprising instructions for exposing the substrate to the processing gas while exposing the substrate to UV radiation from the UV radiation source to thereby remove porogens from an exposed film on the substrate, wherein the processing gas comprises an inert carrier gas and between about 5-30% carbon dioxide, as measured by volumetric flow rate.

Assignees

• Lam Res Corp

Inventors

• Lambert Darcy E
• Holder Casey
• Antonelli George Andrew

Classifications

• C23C16/48 Primary

  by irradiation, e.g. photolysis, radiolysis, particle radiation · CPC title

• C23C16/40

  Oxides · CPC title

• C23C16/458

  characterised by the method used for supporting substrates in the reaction chamber · CPC title

• C23C16/52

  Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} · CPC title

• C23C16/455

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title