Thin film transistor element, production method for same, and display device

Patent metadata

Field	Value
Publication number	US-2016118244-A1
Application number	US-201414895545-A
Country	US
Kind code	A1
Filing date	Feb 27, 2014
Priority date	Jun 4, 2013
Publication date	Apr 28, 2016
Grant date	—

Abstract

A thin-film transistor includes: a gate electrode; a source electrode; a drain electrode; a channel layer that is in contact with the source electrode and the drain electrode, and includes oxide semiconductor; and a gate insulating layer that is disposed between the gate electrode and the channel layer, and is in contact with the gate electrode and the channel layer, wherein a region of the gate insulating layer that is in contact with the channel layer is a silicon compound film, and the silicon compound film contains silicon, nitrogen, and oxygen, and is formed by performing plasma processing for introducing, into a film containing silicon and one of nitrogen and oxygen, the other of nitrogen and oxygen.

First claim

1 . A thin-film transistor comprising:
a gate electrode; a source electrode; a drain electrode; a channel layer that is in contact with the source electrode and the drain electrode, and includes oxide semiconductor; and a gate insulating layer that is disposed between the gate electrode and the channel layer, and is in contact with the gate electrode and the channel layer, wherein a region of the gate insulating layer that is in contact with the channel layer is a silicon compound film, and the silicon compound film contains silicon, nitrogen, and oxygen, and is formed by performing plasma processing for introducing, into a film containing silicon and one of nitrogen and oxygen, the other of nitrogen and oxygen.

2 . The thin-film transistor of claim 1 , wherein
the channel layer is disposed between the gate electrode and each of the source electrode and the drain electrode.

3 . The thin-film transistor of claim 1 , wherein
the silicon compound film is a silicon oxynitride film resulting from performing plasma nitridation processing on a silicon oxide film or performing plasma oxidation processing on a silicon nitride film.

4 . The thin-film transistor of claim 1 , wherein
the silicon compound film includes a layer having a nitrogen concentration of 2×10 20 cm −3 or higher, and the silicon compound film has a hydrogen concentration of 2×10 21 cm −3 or less.

5 . The thin-film transistor of claim 1 , wherein
the silicon compound film has a thickness of 6 nm to 30 nm.

6 . A display device comprising:
the thin-film transistor of claim 1 ; and a pixel part that is connected with the thin-film transistor.

7 . A method of manufacturing a thin-film transistor, comprising:
forming a gate electrode; forming a gate insulating layer on the gate electrode; forming a channel layer including oxide semiconductor on the gate insulating layer; and forming a source electrode and a drain electrode on the channel layer, wherein the gate insulating layer is formed by forming a first film containing silicon and one of nitrogen and oxygen, and performing plasma processing to introduce the other of nitrogen and oxygen into the first film, such that the gate insulating layer has a second film containing silicon, nitrogen, and oxygen as an upper surface thereof.

8 . A method of manufacturing a thin-film transistor, comprising:
forming a channel layer including oxide semiconductor; forming a gate insulating layer on the channel layer; forming a gate electrode on the gate insulating layer; and forming a source electrode and a drain electrode on the channel layer, wherein the gate insulating layer is formed by forming a first film containing silicon and one of nitrogen and oxygen, and performing plasma processing to introduce the other of nitrogen and oxygen into the first film, such that the gate insulating layer has a second film containing silicon, nitrogen, and oxygen as a lower surface thereof.

9 . The method of claim 7 , wherein
as the first film, a silicon oxide film or a silicon nitride film is formed, and as the second film, a silicon oxynitride film is formed, the silicon oxynitride film resulting from performing plasma nitridation processing on the silicon oxide film or performing plasma oxidation processing on the silicon nitride film.

10 . The method of claim 8 , wherein
as the first film, a silicon oxide film or a silicon nitride film is formed, and as the second film, a silicon oxynitride film is formed, the silicon oxynitride film resulting from performing plasma nitridation processing on the silicon oxide film or performing plasma oxidation processing on the silicon nitride film.

Assignees

• Joled Inc

Inventors

• Hayashi Hiroshi
• Nakazaki Yoshiaki
• Kishida Yuji

Classifications

• H10P32/20

  Diffusion for doping of insulating layers · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6927

  the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title