Substrate processing method and template

Patent metadata

Field	Value
Publication number	US-2016108538-A1
Application number	US-201414892236-A
Country	US
Kind code	A1
Filing date	May 12, 2014
Priority date	May 20, 2013
Publication date	Apr 21, 2016
Grant date	—

Abstract

A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, includes: arranging a template to face the substrate, the template including a passage configured to distribute the processing liquid, a direct electrode, and an indirect electrode, and the substrate including a counter electrode, which matches with the direct electrode, installed in the processing region; supplying the processing liquid to the processing region through the passage; and performing the predetermined processing on the substrate by applying a voltage to the indirect electrode to cause the processing target ions to migrate to the counter electrode side while applying a voltage between the direct electrode and the counter electrode to oxidize or reduce the processing target ions that have migrated to the counter electrode side.

First claim

What is claimed is:

1 . A substrate processing method of performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, the method comprising:
arranging a template to face the substrate, the template including a passage configured to distribute the processing liquid, a direct electrode, and an indirect electrode, and the substrate including a counter electrode, which matches with the direct electrode, installed in the processing region; supplying the processing liquid to the processing region through the passage; and performing the predetermined processing on the substrate by applying a voltage to the indirect electrode to cause the processing target ions to migrate to the counter electrode side while applying a voltage between the direct electrode and the counter electrode to oxidize or reduce the processing target ions that have migrated to the counter electrode side.

2 . The substrate processing method of claim 1 , wherein the counter electrode is provided in common to the direct electrode and the indirect electrode, and
in the performing of the predetermined processing, a voltage is applied between the indirect electrode and the counter electrode to cause the processing target ions to migrate to the counter electrode side.

3 . The substrate processing method of claim 1 , wherein the passage is formed to extend in a thickness direction of the template and through the template.

4 . The substrate processing method of claim 3 , wherein the indirect electrode is provided in the passage via an insulating material.

5 . The substrate processing method of claim 3 , wherein the direct electrode is provided above the indirect electrode, and
the performing of the predetermined processing is terminated when the processing liquid in the passage is positioned at a height which is not in contact with the direct electrode.

6 . The substrate processing method of claim 1 , wherein the template includes another indirect electrode (“second indirect electrode”) which is provided in the passage closer to the substrate side than the indirect electrode across an insulating material from the passage, and has a polarity different from that of the indirect electrode, and
in the performing of the predetermined processing, the processing target ions are caused to migrate to the counter electrode side by applying a voltage to the indirect electrode while applying a voltage to the second indirect electrode.

7 . The substrate processing method of claim 1 , wherein the substrate includes another indirect electrode (“second indirect electrode”) which is provided in the processing region closer to the template side than the counter electrode across an insulating material from the processing region, and has a polarity different from that of the indirect electrode, and
in the performing of the predetermined processing, the processing target ions are caused to migrate to the counter electrode side by applying a voltage to the indirect electrode while applying a voltage to the second indirect electrode.

8 . The substrate processing method of claim 1 , wherein the indirect electrode is stacked on the direct electrode via the insulating material.

9 . The substrate processing method of claim 8 , wherein a surface of the direct electrode is exposed to the inside of the passage,
the direct electrode includes a plurality of first planar fins which are arranged in parallel on the surface, and the indirect electrode includes a plurality of second planar fins, each of which is arranged inside the first fin.

10 . The substrate processing method of claim 8 , wherein the direct electrode is provided inside the passage, and
the insulating material and the indirect electrode are provided inside the direct electrode.

11 . The substrate processing method of claim 8 , wherein the direct electrode, the insulating material, and the indirect electrode are provided on an inner surface of the passage.

12 . The substrate processing method of claim 8 , wherein the direct electrode is provided facing the counter electrode, and
a central portion of a surface at the counter electrode side in the direct electrode protrudes.

13 . The substrate processing method of claim 8 , wherein the passage includes an injection hole configured to inject the processing liquid and a discharge hole configured to discharge the processing liquid, and
the direct electrode, the insulating material, and the indirect electrode are provided between the injection hole and the discharge hole.

14 . The substrate processing method of claim 8 , wherein the direct electrode is provided facing the counter electrode, and
a contact electrode, which is different from the direct electrode, is provided in the central portion of the surface at the counter electrode side in the direct electrode protrudes.

15 . The substrate processing method of claim 1 , wherein the direct electrode is provided with a switch configured to switch a connection state of the direct electrode and a power source.

16 . The substrate processing method of claim 1 , wherein, in the performing of the predetermined processing, a DC voltage is continuously applied to the indirect electrode, and a pulse voltage is applied between the direct electrode and the counter electrode.

17 . The substrate processing method of claim 1 , wherein the template includes a monitor electrode configured to inspect a predetermined processing state, and
in the performing of the predetermined processing, a current value of a current flowing between the counter electrode and the monitor electrode is measured, and the processing state is inspected by a change of the measured current value.

18 . A template for use in performing a predetermined processing by supplying a processing liquid to a processing region of a substrate and using processing target ions in the processing liquid, the template comprising:
a passage configured to distribute the processing liquid; an indirect electrode configured to cause the processing target ions to migrate to a counter electrode side when a voltage is applied; and a direct electrode configured to oxidize or reduce the processing target ions that have migrated to the counter electrode side by applying a voltage between the direct electrode and the counter electrode provided in the processing region.

19 . The template of claim 18 , wherein the counter electrode is provided in common to the direct electrode and the indirect electrode, and
a voltage is applied between the indirect electrode and the counter electrode to cause the processing target ions to migrate to the counter electrode side.

20 . The template of claim 18 , wherein the passage is formed to extend in a thickness direction of the template and through the template.

21 . The template of claim 20 , wherein the indirect electrode is provided in the passage via an insulating material.

22 . The template of claim 20 , wherein the direct electrode is arranged above the indirect electrode and at the same height as the top surface of the processing liquid remaining in the passage at the end of the predetermined processing.

23 . The template of claim 20 , wherein the direct electrode and the indirect electrode are arranged side by side in a vertical direction.

24 . The template of claim 20 , wherein the direct electrode and the indi

Assignees

• Tokyo Electron Ltd

Inventors

• Iwatsu Haruo
• Hoshino Tomohisa
• Matsumoto Toshiyuki

Classifications

• H10P14/47

  Electrolytic deposition, i.e. electroplating; Electroless plating · CPC title

• H10W20/023

  the interconnections being through-semiconductor vias · CPC title

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• C25D17/10

  Electrodes {, e.g. composition, counter electrode} · CPC title

• C25D17/008

  Current shielding devices · CPC title