Method of fabricating a variable resistance memory device

Patent metadata

Field	Value
Publication number	US-2016104841-A1
Application number	US-201514794932-A
Country	US
Kind code	A1
Filing date	Jul 9, 2015
Priority date	Oct 14, 2014
Publication date	Apr 14, 2016
Grant date	—

Abstract

A method of fabricating a variable resistance memory device includes preparing a substrate having a lower electrode, forming a mold layer on the substrate, patterning the mold layer to form an opening, forming a variable resistance layer having a first portion in the opening and a second portion disposed on a top surface of the mold layer, and separating the second portion of the variable resistance layer from the first portion by irradiating the variable resistance layer to form a variable resistance element in the opening.

First claim

What is claimed is:

1 . A method of fabricating a variable resistance memory device, the method comprising:
providing a substrate on which a lower electrode is disposed; forming a mold layer on the substrate; patterning the mold layer to form an opening; forming a variable resistance layer on the mold layer, the variable resistance layer having a first portion in the opening, and a second portion extending over a top surface of the mold layer; and separating the second portion of the variable resistance layer from the first portion to thereby form a variable resistance element in the opening, wherein said separating comprise irradiating the variable resistance using a laser.

2 . The method of claim 1 , wherein the separating of the second portion of the variable resistance layer from the first portion comprises melting and/or vaporizing only the second of the first and second portions of the variable resistance layer using the laser.

3 . The method of claim 1 , further comprising:
forming a sacrificial layer on the mold layer before forming the opening; and patterning the sacrificial layer to form a sacrificial pattern on the mold layer.

4 . The method of claim 3 , wherein the separating of the second portion of the variable resistance layer from the first portion comprises melting the sacrificial pattern using the laser to facilitate a separating of the sacrificial pattern from the mold layer.

5 . The method of claim 4 , wherein the separating of the second portion of the variable resistance layer from the first portion comprises:
fixing the substrate to a support disposed in an upper region of a chamber with the mold layer facing a lower region of the chamber; and irradiating the variable resistance layer with laser light propagating to the variable resistance layer from a lower region of the chamber; wherein the sacrificial pattern is separated from the mold layer under force of gravity and, at the same time, the second portion of the variable resistance layer separates from the first portion.

6 . The method of claim 3 , wherein the sacrificial layer is formed of at least one material selected from the group consisting of gallium nitride (GaN), titanium nitride (TiN), aluminum-silicon (Al—Si), silicon (Si), germanium (Ge), crystalline aluminum nitride (crystalline AlN), amorphous aluminum nitride (amorphous AlN), amorphous silicon carbide (amorphous SiC), aluminum (Al), tungsten (W), chrome (Cr), nickel (Ni), and copper (Cu).

7 . The method of claim 1 , wherein the variable resistance element is formed so as to have a concave top surface.

8 . The method of claim 1 , wherein the laser is solid state laser.

9 . The method of claim 8 , wherein the solid state laser is aluminum-garnet (YAG) laser.

10 . The method of claim 1 , wherein the laser has a wavelength of about 500 nm to about 1200 nm, and
wherein the laser irradiates the variable resistance layer with an energy density of 0.3 J/cm 2 to 4 J/cm 2 for a process time of 300 ns to 1200 ns.

11 . The method of claim 1 , wherein the separating of the second portion of the variable resistance layer from the first portion further comprises:
while the variable resistance layer is being irradiated using the laser, directing a gas jet onto the variable resistance layer in such a direction that the second portion flows in a direction across the substrate so as to separate from the first portion.

12 . A method of fabricating a variable resistance memory device, the method comprising:
providing a substrate on which a lower electrode is disposed; forming a mold layer on the substrate; patterning the mold layer to form an opening; forming a variable resistance layer on the mold layer, the variable resistance layer having a first portion in the opening, an air pocket in the first portion, and a second portion extending over a top surface of the mold layer; and irradiating the variable resistance layer with light emitted by a laser to cause the second portion of the variable resistance layer to flow into the opening and thereby form a variable resistance element in the opening.

13 . The method of claim 12 , wherein the second portion of the variable resistance layer is melted by the laser to fill the air gap.

14 . The method of claim 12 , wherein the second portion of the variable resistance layer flows into the opening to expose the top surface of the mold layer.

15 . A method of fabricating a variable resistance memory device, the method comprising:
forming a mold layer on the substrate; patterning the mold layer to form an opening in the mold layer; forming a blanket variable resistance layer on the mold layer to such a thickness that the variable resistance layer extends within the opening and across a top surface of the mold layer, wherein the variable resistance layer is of material whose resistance changes with changes in voltage impressed thereacross and/or current supplied thereto; and forming a variable resistance element in the opening by removing at least all of the variable resistance layer that extends across the top surface of the mold layer and leaving some of the variable resistance layer within the opening, wherein the forming of the variable resistance element comprises irradiating the variable resistance layer.

16 . The method of claim 15 , further comprising:
forming a sacrificial layer on the mold layer before forming the opening in the mold layer; and patterning the sacrificial layer to form a sacrificial pattern on the mold layer before the variable resistance layer is formed, wherein the variable resistance layer is formed on the sacrificial layer pattern, and the forming of the variable resistance element comprises melting the sacrificial layer pattern, and while the sacrificial layer pattern is molten removing the sacrificial pattern from the mold layer along with at least that part of the variable resistance layer that is disposed on the sacrificial layer pattern.

17 . The method of claim 16 , wherein the forming of the variable resistance element comprises supporting the substrate with the variable resistance layer facing downwardly while the sacrificial layer pattern is being melted such that the sacrificial layer pattern falls away from the mold layer after it is melted.

18 . The method of claim 16 , wherein the forming of the variable resistance element comprises vaporizing at least all of the variable resistance layer that extends across the top surface of the mold layer.

19 . The method of claim 16 , wherein the forming of the variable resistance element comprises:
melting the variable resistance layer in at least a region thereof that is located above the level of the top surface of the mold layer, and while the region of the variable resistance layer is molten, directing a gas jet onto the molten region of the variable resistance layer to push the molten region of the variable resistance layer across the mold layer.

20 . The method of claim 16 , wherein the variable resistance layer is formed such that it contains an air pocket within the opening in the mold layer, and
the forming of the variable resistance element comprises melting at least all of the variable resistance layer that extends across the top surface of the mold layer and causing all of the variable resistance layer that extends over the top surface of the mold layer to flow into the opening, whereby the air pocket in the variable resistance layer within the opening is diminished.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Ahn Junku

Classifications

• H10B63/80

  Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays · CPC title

• H10B63/20

  comprising selection components having two electrodes, e.g. diodes · CPC title

• H10N70/8828

  Tellurides, e.g. GeSbTe · CPC title

• H10N70/8825

  Selenides, e.g. GeSe · CPC title

• H10N70/8418

  adapted for focusing electric field or current, e.g. tip-shaped · CPC title