Method for producing chlorosilane gas using continuous tubular reactor
US-10301182-B2 · May 28, 2019 · US
Method of preparing trichlorosilane
US2016101983A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016101983-A1 |
| Application number | US-201414893132-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 18, 2014 |
| Priority date | Jun 19, 2013 |
| Publication date | Apr 14, 2016 |
| Grant date | — |
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Abstract
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This invention relates to a method of preparing trichlorosilane, which enables trichlorosilane to be obtained at improved yield using silicon having copper silicide uniformly formed thereon, by uniformly distributing and applying a copper compound on the surface of silicon and then performing heat treatment.
First claim
Opening claim text (preview).
1 . A method of preparing trichlorosilane, comprising: forming a copper (Cu) compound coating layer on silicon (Si); heat treating the silicon having the copper compound coating layer formed thereon to a temperature equal to or higher than a melting temperature of the copper compound, thus forming copper silicide (Cu-silicide) on the silicon; and supplying silicon tetrachloride and hydrogen to the silicon having copper silicide formed thereon, so that hydrochlorination is carried out. 2 . The method of claim 1 , wherein forming the copper compound coating layer is performed by incorporating the silicon in a solution containing the copper compound. 3 . The method of claim 2 , wherein the solution includes one or more solvents selected from the group consisting of methanol, ethanol, isopropanol, and butanol. 4 . The method of claim 1 , wherein forming the copper silicide is performed in a mixed gas atmosphere containing hydrogen. 5 . The method of claim 4 , wherein the mixed gas includes 10 wt % or less of hydrogen and a remainder of inert gas. 6 . The method of claim 1 , wherein the hydrochlorination is carried out without addition of a catalyst. 7 . The method of claim 1 , wherein the copper silicide is formed on a surface of the silicon. 8 . The method of claim 1 , wherein the copper compound includes CuCl, CuCl 2 , Cu 2 O, CuO, Cu, or mixtures thereof. 9 . The method of claim 1 , wherein the silicon is metallurgical silicon (MG-Si) having an average particle size of 10 to 500 μm. 10 . The method of claim 1 , wherein heat treating is performed at a temperature of 300 to 800° C. and a pressure of 1 to 20 bar. 11 . The method of claim 1 , wherein the hydrochlorination is carried out at a temperature of 300 to 800° C. and a pressure of 1 to 50 bar.
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Classifications
- C01B33/10763Primary
from silicon · CPC title
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- What does patent US2016101983A1 cover?
- This invention relates to a method of preparing trichlorosilane, which enables trichlorosilane to be obtained at improved yield using silicon having copper silicide uniformly formed thereon, by uniformly distributing and applying a copper compound on the surface of silicon and then performing heat treatment.
- Who is the assignee on this patent?
- Hanwha Chemical Corp
- What technology area does this patent fall under?
- Primary CPC classification C01B33/10763. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Thu Apr 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).