Compositional analysis of a gas or gas stream in a chemical reactor and method for preparing chlorosilanes in a fluidized bed reactor

US10031082B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10031082-B2
Application numberUS-201414899147-A
CountryUS
Kind codeB2
Filing dateJun 17, 2014
Priority dateJul 2, 2013
Publication dateJul 24, 2018
Grant dateJul 24, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The composition of a gas or gas stream containing AlCl3 in a chemical reactor is measured by removing AlCl3 from the gas and analyzing the gas by gas chromatography or spectroscopy. Chlorosilanes may be prepared in a fluidized bed reactor having a reactor height H0, in which supplied HCl reacts with silicon, wherein a temperature profile in the fluidized bed reactor is greater than S1(H/H0)=(a1−b1)*(1/(1+exp(−c1((H/H0)−d1))))+b1 and less than S2(H/H0)=(a2−b2)*(1/(1+exp(−c2((H/H0)−d2))))+b2, where a1=100° C., a2=300° C., b1=300° C., b2=400° C., c1=50, c2=20, d1=0.2, and d2=0.8.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for analyzing the composition of a gas or gas stream comprising AlCl 3 exiting a fluidized bed chemical reactor having a reactor height H0 in which HCI reacts with Si forming chlorosilanes, comprising removing AlCl 3 from the gas or gas stream, subsequently analyzing the gas or gas stream by means of on-line gas chromatography or spectroscopy, and employing the results of analyzing the gas or gas stream to establish or modify a temperature profile in the reactor as a function of reactor height by changing at least one reactor operating parameter, wherein the temperature profile in the fluidized bed chemical reactor having a reactor height H0, is above S1(H/H0)=(a1−b1)*(1/(1+exp(−c1((H/H0)−d1))))+b1 and below S2(H/H0)=(a2−b2)*(1/(1+exp(−c2((H/H0)−d2))))+b2, where a1=100° C., a2=300° C., b1=300° C., b2=400° C., c1=50, c2=20, d1=0.2, and d2=0.8. 2. The method of claim 1 , wherein the silicon comprises metallurgical grade silicon. 3. The method of claim 1 , wherein removing AlCl 3 , from the gas or gas stream is accomplished by absorption on solid sodium chloride. 4. The method of claim 1 , further comprising removing particulate solids as well as AlCl 3 from the gas or gas stream. 5. The method of claim 1 , wherein the gas or gas stream is analyzed by Raman spectroscopy, gas chromatography or IR spectroscopy. 6. The method of claim 1 , wherein the analysis of the gas or gas stream determines at least one of the concentrations of HCl, N 2 , H 2 , or one or more chlorosilanes in the gas or gas stream. 7. The method of claim 1 , wherein the data obtained from analysis of the gas controls the fluidized bed temperature profile of the chemical reactor. 8. The method of claim 7 , wherein the reactor is a fluidized bed reactor in which trichlorosilane is prepared by reaction of metallurgical grade silicon with HCl. 9. The method of claim 8 , wherein analysis of the gas is used to change one or more operating parameters so as to optimize one or more variables selected from the group consisting of chlorosilane yield, trichlorosilane selectivity, HCl conversion rate, and space-time yield. 10. The method of claim 1 , wherein the analysis of the gas or gas stream is used to modify temperatures in the reactor and temperature profile as a function of a reactor height. 11. The method of claim 1 , wherein analysis of the gas determines a time for discharge of catalyst material. 12. A method for preparing chlorosilanes in a fluidized bed reactor having a reactor height H0, in which HCl reacts with silicon, comprising establishing a temperature profile in the fluidized bed reactor which is above S1(H/H0)=(a1−b1)*(1/(1+exp(−c1((H/H0)−d1))))+b1 and below S2(H/H0)=(a2−b2)*(1/(1+exp(−c2((H/H0)−d2))))+b2, where a1=100° C., a2=300° C., b1=300° C., b2=400° C., c1=50, c2=20, d1=0.2, and d2=0.8. 13. The method of claim 12 , further comprising removing AlCl 3 from a product gas stream and analyzing the product gas stream by on-line gas chromatography or spectroscopy to obtain data on the composition of the product gas stream, and adjusting the temperature profile of the reactor from the data to optimize production of a desired chlorosilane product. 14. The method of claim 13 , wherein AlCl 3 is removed from the gas stream by contacting solid sodium chloride forming a liquid adduct of sodium chloride and aluminum chloride, and collecting the liquid adduct in a collecting vessel below a container in which the solid sodium chloride is contained.

Assignees

Inventors

Classifications

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10031082B2 cover?
The composition of a gas or gas stream containing AlCl3 in a chemical reactor is measured by removing AlCl3 from the gas and analyzing the gas by gas chromatography or spectroscopy. Chlorosilanes may be prepared in a fluidized bed reactor having a reactor height H0, in which supplied HCl reacts with silicon, wherein a temperature profile in the fluidized bed reactor is greater than S1(H/H0)=(a1…
Who is the assignee on this patent?
Wacker Chemie Ag
What technology area does this patent fall under?
Primary CPC classification G01N21/65. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jul 24 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).