Composition for forming a coating type silicon-containing film, substrate, and patterning process

Patent metadata

Field	Value
Publication number	US-2016096977-A1
Application number	US-201514855772-A
Country	US
Kind code	A1
Filing date	Sep 16, 2015
Priority date	Oct 3, 2014
Publication date	Apr 7, 2016
Grant date	—

Abstract

A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

First claim

1 . A composition for forming a coating type silicon-containing film, comprising
one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units in the formula (2)

wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 each represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); R 7 , R 8 , R 9 , R 10 , R 11 , and R 12 each represent a methyl group, a phenyl group, or a hydroxyl group; m10, m11, m12, and m13 each represent a molar fraction in the silicic acid skeletal structure, and satisfy m10+m11+m12+m13=1, 0≦m10≦0.3, 0≦m11≦0.5, 0≦m12≦0.7, and 0<m13≦1; and m20, m21, m22, and m23 each represent a molar fraction in the silicon skeletal structure, and satisfy m20+m21+m22+m23=1, 0≦m20≦1, 0≦m21≦1, 0≦m22≦1, and 0≦m23≦1.

2 . The composition for forming a coating type silicon-containing film according to claim 1 , wherein the composition comprises a solvent and (A) one or more polymers selected from a hydrolysate, a condensate, and a hydrolysis condensate of a mixture containing one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more polysilane compounds represented by the formula (A-2-1),
R 1 R 2 R 3 SiOR  (A-1-1)
R 4 R 5 Si(OR) 2   (A-1-2)
R 6 Si(OR) 3   (A-1-3)
Si(OR) 4   (A-1-4)

wherein R represents a hydrocarbon group having 1 to 6 carbon atoms; and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 have the same meanings as defined above,
(R 7 R 8 R 9 Si) a1 (R 10 R 11 Si) a2 (R 12 Si) a3 (Si) a4   (A-2-1)

wherein R 7 , R 8 , R 9 , R 10 , R 11 , and R 12 have the same meanings as defined above; and a1, a2, a3, and a4 each represent a molar fraction, and satisfy a1+a2+a3+a4=1, 0≦a1≦1, 0≦a2≦1, 0≦a3≦1, and 0≦a4≦1.

3 . The composition for forming a coating type silicon-containing film according to claim 2 , wherein the compound represented by the formula (A-2-1) has a weight average molecular weight of 1,000 or less.

4 . The composition for forming a coating type silicon-containing film according to claim 1 , wherein the composition comprises: a solvent; (A) one or more polymers selected from a hydrolysate, a condensate, and a hydrolysis condensate of a mixture containing one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4); and (B) one or more polysilane compounds represented by the formula (B-1),
R 1 R 2 R 3 SiOR  (A-1-1)
R 4 R 5 Si(OR) 2   (A-1-2)
R 6 Si(OR) 3   (A-1-3)
Si(OR) 4   (A-1-4)

wherein R represents a hydrocarbon group having 1 to 6 carbon atoms; and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 have the same meanings as defined above,
(R 7 R 8 R 9 Si) a1 (R 10 R 11 Si) a2 (R 12 Si) a3 (Si) a4   (B-1)

wherein R 7 , R 8 , R 9 , R 10 , R 11 , and R 12 have the same meanings as defined above; and a1, a2, a3, and a4 each represent a molar fraction, and satisfy a1+a2+a3+a4=1, 0≦a1≦1, 0≦a2≦1, 0≦a3≦1, and 0≦a4≦1.

5 . The composition for forming a coating type silicon-containing film according to claim 4 , wherein the compound represented by the formula (B-1) has a weight average molecular weight of 1,000 or less.

6 . The composition for forming a coating type silicon-containing film according to claim 2 , wherein the composition further comprises (C) one or more members selected from one or more silicon compounds represented by the formula (C-1), a hydrolysate, a condensate, and a hydrolysis condensate thereof,
R 1C c1 R 2C c2 R 3C c3 Si(OR 0C ) (4-c1-c2-c3)   (C-1)

wherein R 0C represents a hydrocarbon group having 1 to 6 carbon atoms; R 1C , R 2C , and R 3C each represent a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and c1, c2, and c3 are each 0 or 1, and satisfy 1≦c1+c2+c3≦3.

7 . The composition for forming a coating type silicon-containing film according to claim 4 , wherein the composition further comprises (C) one or more members selected from one or more silicon compounds represented by the formula (C-1), a hydrolysate, a condensate, and a hydrolysis condensate thereof,
R 1C c1 R 2C c2 R 3C c3 Si(OR 0C ) (4-c1-c2-c3)   (C-1)

wherein R 0C represents a hydrocarbon group having 1 to 6 carbon atoms; R 1C , R 2C , and R 3C each represent a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and c1, c2, and c3 are each 0 or 1, and satisfy 1≦c1+c2+c3≦3.

8 . The composition for forming a coating type silicon-containing film according to claim 6 , wherein one or more of R 1C , R 2C , and R 3C in the formula (C-1) are an organic group having a hydroxyl group or a carboxyl group each substituted by an acid-labile group.

9 . The composition for forming a coating type silicon-containing film according to claim 7 , wherein one or more of R 1C , R 2C , and R 3C in the formula (C-1) are an organic group having a hydroxyl group or a carboxyl group each substituted by an acid-labile group.

10 . The composition for forming a coating type silicon-containing film according to claim 6 , wherein the component (C) contains one or more members selected from one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more phosphorus compounds represented by the formulae (C-2-1) to (C-2-6) each alone, a mixture thereof, and a hydrolysate, a condensate, or a hydrolysis condensate thereof,
PX 3   (C-2-1)
POX 3   (C-2-2)
P 2 O 5   (C-2-3)
H(HPO 3 ) a5 OH  (C-2-4)
R 13 PX 2   (C-2-5)
R 13 POX 2   (C-2-6)

wherein R 13 represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); X represents a halogen atom, a hydroxyl group, or an alkoxy group having 1 to 6 carbon atoms; and a5 is an integer of 1 or more.

11 . The composition for forming a coating type silicon-containing film according to claim 7 , wherein the component (C) contains one or more members selected from one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more phosphorus compounds represented by the formulae (C-2-1) to (C-2-6) each alone, a mixture thereof, and a hydrolysate, a condensate, or a hydrolysis condensate thereof,
PX 3   (C-2-1)
POX 3   (C-2-2)
P 2 O 5   (C-2-3)
H(HPO 3 ) a5 OH  (C-2-4)
R 13 PX 2   (C-2-5)
R 13 POX 2   (C-2-6)

wherein R 13 represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); X represents a halogen atom, a hydroxyl group, or an alkoxy group having 1 to 6 carbon atoms; and a5 is an integer of 1 or more.

12 . The composition for forming a coating type silicon-containing film according to claim 6 , wherein the component (C) contains one or more members selected from one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more boron compounds represented by the formulae (C-3-1) to (C-3-3) each alone, a mixture thereof, and a hydrolysate, a condensate, or a hydrolysis condensate thereof,
BX 3   (C-3-1)
B 2 O 3   (C-3-2)
R 14 BX 2   (C-3-3)

wherein R 14 represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); and X represents a halogen atom, a hydroxyl

Assignees

• Shinetsu Chemical Co

Inventors

• Tachibana Seiichiro
• Taneda Yoshinori
• Kikuchi Rie
• Ogihara Tsutomu

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title