Method for repairing an oxide layer and method for manufacturing a semiconductor structure applying the same

Patent metadata

Field	Value
Publication number	US-2016027679-A1
Application number	US-201414444131-A
Country	US
Kind code	A1
Filing date	Jul 28, 2014
Priority date	Jul 28, 2014
Publication date	Jan 28, 2016
Grant date	—

Abstract

A method for repairing an oxide layer and a method for manufacturing a semiconductor structure applying the same are provided. The method for repairing an oxide layer comprises following steps. First, a carrier having a first area and a second area is provided, wherein a repairing oxide layer is formed on the second area. Then, the carrier is attached to a substrate with an oxide layer to be repaired formed thereon, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the oxide layer to be repaired. Thereafter, the oxide layer to be repaired is bonded with the repairing oxide layer.

First claim

What is claimed is:

1 . A method for repairing an oxide layer, comprising:
providing a carrier having a first area and a second area, wherein a repairing oxide layer is formed on the second area; attaching the carrier to a substrate with an oxide layer to be repaired formed thereon, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the oxide layer to be repaired; and bonding the oxide layer to be repaired with the repairing oxide layer.

2 . The method according to claim 1 , wherein an inactive film is formed on at least the first area of the carrier, and a separating film is formed on the second area of the carrier, wherein the repairing oxide layer is formed on the separating film.

3 . The method according to claim 2 , wherein the inactive film is formed only on the first area of the carrier.

4 . The method according to claim 2 , wherein the inactive film is formed on both the first area and the second area of the carrier, and the separating film is formed on the inactive film.

5 . The method according to claim 2 , wherein the inactive film is formed of SiN or SiCN, and the separating film is formed of SiN, SiCN or Si.

6 . The method according to claim 1 , wherein the oxide layer to be repaired is bonded with the repairing oxide layer by thermal curing at a temperature higher than 700° C.

7 . The method according to claim 6 , an O 3 gas is provided when bonding the oxide layer to be repaired with the repairing oxide layer.

8 . The method according to claim 1 , further comprising:
separating the repairing oxide layer from the separating film.

9 . The method according to claim 8 , wherein the repairing oxide layer is separated from the separating film by UV light, heat or etching.

10 . The method according to claim 8 , wherein the oxide layer to be repaired and the repairing oxide layer form a bulk oxide, and the method further comprises polishing the bulk oxide.

11 . A method for manufacturing a semiconductor structure, comprising:
providing a substrate having a first region and a second region, wherein a plurality of fins are formed in the first region; depositing an oxide layer in the first region and the second region of the substrate; polishing the oxide layer; providing a carrier having a first area and a second area, wherein a repairing oxide layer is formed on the second area; and attaching the carrier to the substrate, wherein the carrier and the substrate are attached to each other through the repairing oxide layer and the polished oxide layer in the second region; and bonding the polished oxide layer in the second region with the repairing oxide layer.

12 . The method according to claim 11 , wherein an inactive film is formed on at least the first area of the carrier, and a separating film is formed on the second area of the carrier, wherein the repairing oxide layer is formed on the separating film.

13 . The method according to claim 12 , wherein the inactive film is formed only on the first area of the carrier.

14 . The method according to claim 12 , wherein the inactive film is formed on both the first area and the second area of the carrier, and the separating film is formed on the inactive film.

15 . The method according to claim 12 , wherein the inactive film is formed of SiN or SiCN, and the separating film is formed of SiN, SiCN or Si.

16 . The method according to claim 11 , wherein the polished oxide layer in the second region is bonded with the repairing oxide layer by thermal curing at a temperature higher than 700° C.

17 . The method according to claim 16 , an O 3 gas is provided when bonding the polished oxide layer in the second region with the repairing oxide layer.

18 . The method according to claim 11 , further comprising:
separating the repairing oxide layer from the separating film.

19 . The method according to claim 18 , wherein the repairing oxide layer is separated from the separating film by UV light, heat or etching.

20 . The method according to claim 18 , wherein the polished oxide layer in the second region and the repairing oxide layer form a bulk oxide, and the method further comprises polishing the bulk oxide.

Assignees

• United Microelectronics Corp

Inventors

• Huang Po-Cheng
• Li Yu-Ting
• Lin Chih-Hsun
• Li Kun-Ju
• Sie Wu-Sian
• Liu Yi-Liang

Classifications

• H10P72/7438

  with parts of the auxiliary support remaining in the finished device · CPC title

• H10P72/7432

  used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate · CPC title

• H10P72/744

  Details of chemical or physical process used for separating the auxiliary support from a device or a wafer · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title