Nonvolatile semiconductor memory device and method for manufacturing same

Patent metadata

Field	Value
Publication number	US-9450065-B2
Application number	US-201414495958-A
Country	US
Kind code	B2
Filing date	Sep 25, 2014
Priority date	Nov 10, 2010
Publication date	Sep 20, 2016
Grant date	Sep 20, 2016

Abstract

According to one embodiment, a nonvolatile semiconductor memory device includes a first stacked structure body, a first semiconductor layer, a first organic film, a first semiconductor-side insulating film, and a first electrode-side insulating film. The first stacked structure body includes a plurality of first electrode films stacked along a first direction and a first inter-electrode insulating film provided between the first electrode films. The first semiconductor layer is opposed to side faces of the first electrode films. The first organic film is provided between the side faces of the first electrode films and the first semiconductor layer and containing an organic compound. The first semiconductor-side insulating film is provided between the first organic film and the first semiconductor layer. The first electrode-side insulating film provided between the first organic film and the side faces of the first electrode films.

First claim

What is claimed is:

1. A method for manufacturing a nonvolatile semiconductor memory device including a stacked structure body including a plurality of electrode films stacked along a first direction and an inter-electrode insulating film provided between the electrode films, a semiconductor layer opposed to side faces of the electrode films, an organic film provided between the side faces of the electrode films and the semiconductor layer and containing an organic compound, a semiconductor-side insulating film provided between the organic film and the semiconductor layer, and an electrode-side insulating film provided between the organic film and the side faces of the electrode films, the method comprising:
alternately stacking a plurality of first films and a plurality of second films along the first direction to form a base body, the base body being to be at least part of the stacked structure body;
forming a through hole penetrating through the base body along the first direction and burying a semiconductor in the through hole to form the semiconductor layer;
removing the plurality of first films;
forming an insulating film on a side face of the semiconductor layer exposed by removing the plurality of first films to form the semiconductor-side insulating film;
forming the organic film on the semiconductor-side insulating film;
forming the electrode-side insulating film on the organic film; and
forming a conductive film on the electrode-side insulating film to form the electrode films,
wherein the organic film is bonded to the semiconductor-side insulating film by at least one of an ether linkage, a silyl ether linkage, an ester linkage, a thioether linkage.

2. The method according to claim 1 , wherein the forming the organic film includes processing using a self-assembly method.

3. The method according to claim 1 , wherein forming the electrode films includes recessing the conductive film.

4. The method according to claim 1 , wherein the organic film is bonded to the semiconductor-side insulating film by a silyl ether linkage.

5. The method according to claim 1 , wherein
the semiconductor layer penetrates through the stacked structure body along the first direction,
the semiconductor-side insulating film surrounds a side face of the semiconductor layer,
the organic film surrounds a side face of the semiconductor-side insulating film, and
the electrode-side insulating film surrounds a side face of the organic film.

6. The method according to claim 1 , wherein the organic film is a monomolecular film.

7. The method according to claim 1 , wherein the organic film contains at least one selected from the group consisting of Zn, Cu, Fe, Ru, and Ir.

8. The method according to claim 1 , wherein the organic film contains at least one of a porphyrin, a metallocene, and a bipyridine.

9. The method according to claim 1 , wherein the organic film includes at least one of a zinc porphyrin, a ferrocene and an iron bis(terpyridine).

10. The method according to claim 1 , wherein the semiconductor-side insulating film contains a metal oxide.

Assignees

• Toshiba Kk

Inventors

• Hattori Shigeki
• Ichihara Reika
• Terai Masaya
• Nishizawa Hideyuki
• Tada Tsukasa
• Asakawa Koji
• Fuke Hiroyuki
• Mikoshiba Satoshi
• Fukuzumi Yoshiaki
• Aochi Hideaki

Classifications

• H10P14/6302

  Non-deposition formation processes · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title

• H10D64/037

  comprising charge-trapping insulators · CPC title

• H10D64/685 Primary

  being perpendicular to the channel plane · CPC title

• H01L27/1157

  Electricity · mapped topic