Devices Including a Multilayer Article Having an Absorbent Layer and an Ultraviolet Mirror, Systems, and Methods of Disinfecting
US-2024261449-A1 · Aug 8, 2024 · US
US2016011345A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016011345-A1 |
| Application number | US-201514696331-A |
| Country | US |
| Kind code | A1 |
| Filing date | Apr 24, 2015 |
| Priority date | Jul 11, 2014 |
| Publication date | Jan 14, 2016 |
| Grant date | — |
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An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.
Opening claim text (preview).
What is claimed is: 1 . A method of manufacture for an extreme ultraviolet reflective element comprising: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and forming a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 2 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the second reflective layer having the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 3 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 4 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer formed from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 5 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer by injecting carbon into a continuous stream of molybdenum to form an atomic mixture of carbon and molybdenum on the lower amorphous layer. 6 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer directly on the lower amorphous layer and forming the upper amorphous layer directly on the preventative layer. 7 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming between 20 and 60 of the reflective layer pairs. 8 . An extreme ultraviolet reflective element comprising: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 9 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the second reflective layer includes the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 10 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 11 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer formed from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 12 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer formed from an atomic mixture of carbon and molybdenum on the lower amorphous layer. 13 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer directly on the lower amorphous layer and the upper amorphous layer directly on the preventative layer. 14 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes between 20 and 60 of the reflective layer pairs. 15 . An extreme ultraviolet reflective element production system comprising: a first deposition system for depositing a multilayer stack on a substrate, the multilayer stack including a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a second deposition system for forming a capping layer on the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 16 . The system as claimed in claim 15 , wherein the first deposition system is for forming the second reflective layer having the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 17 . The system as claimed in claim 15 , wherein the first deposition system is for forming the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 18 . The system as claimed in claim 15 , the first deposition system is for forming the preventative layer from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 19 . The system as claimed in claim 15 , the first deposition system is for forming the preventative layer by injecting carbon into a continuous stream of molybdenum to form an atomic mixture of carbon and molybdenum on the lower amorphous layer. 20 . The system as claimed in claim 15 , wherein the first deposition system is for forming the preventative layer directly on the lower amorphous layer and forming the upper amorphous layer directly on the preventative layer.
Devices having a multilayer structure · CPC title
Atomic layer deposition [ALD] · CPC title
the reflecting layers comprising two or more metallic layers · CPC title
characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title
Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties · CPC title
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