Extreme ultraviolet reflective element with amorphous layers and method of manufacturing thereof

US2016011345A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2016011345-A1
Application numberUS-201514696331-A
CountryUS
Kind codeA1
Filing dateApr 24, 2015
Priority dateJul 11, 2014
Publication dateJan 14, 2016
Grant date

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  1. Title

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.

First claim

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What is claimed is: 1 . A method of manufacture for an extreme ultraviolet reflective element comprising: providing a substrate; forming a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and forming a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 2 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the second reflective layer having the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 3 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 4 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer formed from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 5 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer by injecting carbon into a continuous stream of molybdenum to form an atomic mixture of carbon and molybdenum on the lower amorphous layer. 6 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming the preventative layer directly on the lower amorphous layer and forming the upper amorphous layer directly on the preventative layer. 7 . The method as claimed in claim 1 , wherein forming the multilayer stack includes forming between 20 and 60 of the reflective layer pairs. 8 . An extreme ultraviolet reflective element comprising: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 9 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the second reflective layer includes the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 10 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 11 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer formed from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 12 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer formed from an atomic mixture of carbon and molybdenum on the lower amorphous layer. 13 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes the preventative layer directly on the lower amorphous layer and the upper amorphous layer directly on the preventative layer. 14 . The extreme ultraviolet reflective element as claimed in claim 8 , wherein the multilayer stack includes between 20 and 60 of the reflective layer pairs. 15 . An extreme ultraviolet reflective element production system comprising: a first deposition system for depositing a multilayer stack on a substrate, the multilayer stack including a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a second deposition system for forming a capping layer on the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion. 16 . The system as claimed in claim 15 , wherein the first deposition system is for forming the second reflective layer having the lower amorphous layer having a thickness of less than 2.5 nanometers and the upper amorphous layer having a thickness of less than 2.5 nanometers. 17 . The system as claimed in claim 15 , wherein the first deposition system is for forming the preventative layer between the lower amorphous layer and the upper amorphous layer for preventing crystallization of the lower amorphous layer and the upper amorphous layer. 18 . The system as claimed in claim 15 , the first deposition system is for forming the preventative layer from carbon, ruthenium, niobium, nitrogen, molybdenum carbide, ruthenium molybdenum, boron, or boron carbide. 19 . The system as claimed in claim 15 , the first deposition system is for forming the preventative layer by injecting carbon into a continuous stream of molybdenum to form an atomic mixture of carbon and molybdenum on the lower amorphous layer. 20 . The system as claimed in claim 15 , wherein the first deposition system is for forming the preventative layer directly on the lower amorphous layer and forming the upper amorphous layer directly on the preventative layer.

Assignees

Inventors

Classifications

  • Devices having a multilayer structure · CPC title

  • Atomic layer deposition [ALD] · CPC title

  • the reflecting layers comprising two or more metallic layers · CPC title

  • characterised by the coating material ({C23C14/0021} , C23C14/04 take precedence) · CPC title

  • Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties · CPC title

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What does patent US2016011345A1 cover?
An extreme ultraviolet reflective element and method of manufacture includes a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer having a preventative layer separating a lower amorphous layer and an upper amorphous layer; and a capping layer on and …
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification G02B5/0891. Mapped technology areas include Physics.
When was this patent published?
Publication date Thu Jan 14 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).