Systems and methods for forming nanowires using anodic oxidation

Patent metadata

Field	Value
Publication number	US-2015275383-A1
Application number	US-201414315421-A
Country	US
Kind code	A1
Filing date	Jun 26, 2014
Priority date	Mar 31, 2014
Publication date	Oct 1, 2015
Grant date	—

Abstract

Structures, devices and methods are provided for forming nanowires on a substrate. A first protruding structure is formed on a substrate. The first protruding structure is placed in an electrolytic solution. Anodic oxidation is performed using the substrate as part of an anode electrode. One or more nanowires are formed in the protruding structure. The nanowires are surrounded by a first dielectric material formed during the anodic oxidation.

First claim

What is claimed is:

1 . A method for forming nanowires on a substrate, the method comprising:
forming a first protruding structure on a substrate; placing the substrate including the first protruding structure in an electrolytic solution; performing anodic oxidation using the substrate as part of an anode electrode; and forming one or more nanowires in the protruding structure, the nanowires being surrounded by a first dielectric material formed during the anodic oxidation.

2 . The method of claim 1 , wherein the anode electrode further includes a conductive material configured to be electrically connected to a power supply and be in contact with the substrate.

3 . The method of claim 1 , wherein:
the anode electrode further includes a conductive material and a metal electrode, the metal electrode being disposed between the substrate and the conductive material; and the conductive material is configured to be electrically connected to a power supply and be in contact with the substrate and the metal electrode.

4 . The method of claim 1 , wherein the first protruding structure includes: a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

5 . The method of claim 1 , wherein:
the first protruding structure has a width and a height; an aspect ratio of the first protruding structure is equal to the height divided by the width; and the aspect ratio is larger than an aspect-ratio threshold.

6 . The method of claim 1 , wherein the first protruding structure has a width in a range of about 10 nm to about 100 nm.

7 . The method of claim 1 , wherein the first protruding structure has a height in a range of about 10 nm to about 500 nm.

8 . The method of claim 1 , wherein the first protruding structure includes a sidewall corresponding to: a vertical shape, a trapezoidal shape, a scalloped shape, or a shape of which a top width is larger than or equal to a bottom width.

9 . The method of claim 1 , wherein:
the first protruding structure includes a first part and a second part under the first part; oxidation of the first part stops when the second part is completely oxidized during the anodic oxidation; and a first nanowire is formed when the oxidation of the first part stops, the first nanowire corresponding to the un-oxidized first part.

10 . The method of claim 9 , wherein:
the first protruding structure includes a third part and a fourth part under the third part; oxidation of the third part stops when the fourth part is completely oxidized during the anodic oxidation; and a second nanowire is formed when the oxidation of the third part stops, the second nanowire corresponding to the un-oxidized third part.

11 . The method of claim 1 , wherein the performing anodic oxidation using the substrate as part of an anode electrode includes:
performing a first oxidation process to oxidize part of the first protruding structure using the substrate as part of the anode electrode; forming a metal material on the partially oxidized protruding structure; and performing a second oxidation process to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

12 . The method of claim 1 , wherein the performing anodic oxidation using the substrate as part of an anode electrode includes:
forming a material on the protruding structure; and performing the anodic oxidation to oxidize the metal material and the first protruding structure using the substrate as part of the anode electrode.

13 . The method of claim 1 , wherein one or more second protruding structures are formed on the substrate for nanowire formation through the anodic oxidation.

14 . The method of claim 1 , further comprising:
removing at least part of the first dielectric material; forming a gate dielectric material on the nanowires; and forming one or more gate contacts on the gate dielectric material for fabricating nanowire devices.

15 . A structure comprising:
a substrate; a protruding structure formed on the substrate; and one or more nanowires formed in the protruding structure; wherein the substrate includes a ridge section extending under the protruding structure.

16 . The structure of claim 15 , wherein:
the one or more nanowires extend along a first direction; and the ridge section extends along the first direction.

17 . The structure of claim 15 , wherein the protruding structure includes: a nanowire-shaped structure, a nanoslate, a nanorod, or a nanostructure disposed between pads.

18 . The structure of claim 15 , wherein:
the protruding structure has a width and a height; an aspect ratio of the protruding structure is equal to the height divided by the width; and the aspect ratio is larger than an aspect-ratio threshold.

19 . The structure of claim 15 , wherein the protruding structure includes a sidewall corresponding to: a vertical shape, a trapezoidal shape, a scalloped shape, or a shape of which a top width is larger than or equal to a bottom width.

20 . A device comprising:
a source region formed on a substrate; a drain region formed on a substrate; and a gate structure including one or more nanowires disposed between the source region and the drain region; wherein the substrate includes a ridge section extending under the nanowires.

Assignees

• Taiwan Semiconductor Mfg
• Univ Nat Taiwan

Inventors

• Hwu Jenn-Gwo
• Tian Wei-Cheng
• Tseng Po-Hao

Classifications

• H10P14/3462

  Nanowires · CPC title

• H10P14/6324

  Formation by anodic treatments, e.g. anodic oxidation · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C25D5/02

  Electroplating of selected surface areas · CPC title

• C25D17/001

  Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells · CPC title