Photoresist layer outgassing prevention
US-2024282577-A1 · Aug 22, 2024 · US
US2015234279A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2015234279-A1 |
| Application number | US-201514590488-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jan 6, 2015 |
| Priority date | Jul 10, 2012 |
| Publication date | Aug 20, 2015 |
| Grant date | — |
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A mark forming method includes: a step of forming, on a device layer of a wafer, an intermediate layer to which a polymer layer containing a block copolymer is adherable, the device layer including a shot area and a scribe line area; a step of removing a portion, of the intermediate layer, formed in the scribe line area; a step of exposing an image of a mark on the scribe line area and forming, based on the image of the mark, a mark including recessed portion; and a step of applying the polymer layer containing the block copolymer on the device layer of the wafer. When a circuit pattern is forced by using the self-assembly of the block copolymer, it is possible to form the mark simultaneously with the formation of the circuit pattern.
Opening claim text (preview).
What is claimed is: 1 . A mark forming method comprising: forming, oil a substrate, an intermediate layer to which a polymer layer containing a block copolymer is adherable; removing a portion of the intermediate layer formed on the substrate; forming an alignment mark in an area of the substrate, the area being an area from which the portion of the intermediate layer has been removed; and forming a device pattern by applying the polymer layer containing the block copolyme…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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