Direct Current Superposition Freeze

Patent metadata

Field	Value
Publication number	US-2015160557-A1
Application number	US-201414532672-A
Country	US
Kind code	A1
Filing date	Nov 4, 2014
Priority date	Dec 5, 2013
Publication date	Jun 11, 2015
Grant date	—

Abstract

Systems and methods include improved techniques for patterning substrates, including improvements to double patterning techniques. Direct current superposition plasma processing is combined with photolithographic patterning techniques. An electron flux or ballistic electron beam from a plasma processing system can induce cross linking in a given photoresist, which alters the photoresist to be resistant to subsequent light exposure and/or developer treatments. Plasma processing is also used to add a protective layer of oxide on exposed surfaces of a first relief pattern, thereby protecting the photoresist from a developing acid. By protecting an initial photoresist relief pattern from developing acid, a second pattern can be applied on and/or between the first photoresist relief pattern thereby doubling an initial pattern or otherwise increasing pattern density. This combined pattern can then be used for subsequent microfabrication such as transferring the combined pattern into one or more underlying layers.

First claim

1 . A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate; developing a first exposure pattern in the first layer of radiation-sensitive material, the first exposure pattern having been exposed via photolithography, wherein developing the first exposure pattern results in a first patterned layer; positioning the substrate in a processing chamber of a capacitively coupled plasma system; treating the first patterned layer with a flux of electrons by coupling negative polarity direct current power to an upper electrode of the plasma processing system, the flux of electrons being accelerated from the upper electrode with sufficient energy to pass through a plasma and strike the substrate such that an exposed surface of the first patterned layer changes in physical properties; forming a second layer of radiation-sensitive material on the substrate; and developing a second exposure pattern in the second layer of radiation-sensitive material, the second exposure pattern having been exposed via photolithography, wherein developing the second exposure pattern results in a second patterned layer such that the second patterned layer and the first patterned layer form a combined pattern.

2 . The method of claim 1 , wherein the upper electrode comprises silicon; and
wherein coupling negative polarity direct current power causes sputtering of silicon onto the first patterned layer creating a semi-conformal layer of silicon on the first patterned layer.

3 . The method of claim 2 , further comprising exposing the semi-conformal layer of silicon to an oxygen-containing environment such that the semi-conformal layer of silicon becomes silicon oxide.

4 . The method of claim 1 , wherein the plasma is created in the processing chamber from a process gas flowed into the processing chamber.

5 . The method of claim 4 , wherein the process gas comprises an inert gas and hydrogen or a noble gas and nitrogen.

6 . The method of claim 1 , wherein developing the first exposure pattern includes using developing chemicals to dissolve and remove the first exposure pattern from the first layer of radiation-sensitive material.

7 . The method of claim 1 , wherein changes in physical properties includes increased cross-linking of the exposed surface such that the exposed surface of the first patterned layer increases in resistance to developing chemicals.

8 . The method of claim 1 , wherein the first patterned layer includes a plurality of line structures.

9 . The method of claim 1 , wherein the first patterned layer includes structures created at a first spacing.

10 . The method of claim 1 , wherein the first patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist; and
wherein the second patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist.

11 . The method of claim 1 , wherein the first patterned layer is selected from a negative tone developer resist, and wherein the second patterned layer is selected from a negative tone developer resist.

12 . The method of claim 1 , wherein the combined pattern includes intersecting features.

13 . The method of claim 1 , wherein the combined pattern includes intersecting trenches.

14 . The method of claim 1 , wherein the combined pattern includes trenches defined by the second patterned layer that intersect with trenches defined by the first patterned layer.

15 . The method of claim 14 , wherein trench intersections define contact holes.

16 . The method of claim 15 , further comprising transferring defined contact holes to one or more underlying layers.

17 . The method of claim 1 , further comprising transferring the combined pattern to an underlying layer via an etch operation.

18 . A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate; developing a first pattern in the first layer of radiation-sensitive material, the first pattern having been exposed via photolithography, wherein developing the first pattern results in a first patterned layer; treating the first patterned layer with an electron flux formed by coupling negative polarity direct current power to an upper electrode in a plasma processing chamber, such that a protective layer is semi-conformally created on exposed surfaces of the first patterned layer, the electron flux sufficient to increase cross-linking of the first patterned layer; forming a second layer of radiation-sensitive material on the substrate; and developing a second pattern in the second layer of radiation-sensitive material, the second pattern having been exposed via photolithography, wherein developing the second pattern results in a second patterned layer having structures created between structures of the first patterned layer.

19 . A method for double patterning a substrate, the method comprising:
forming a first layer of radiation-sensitive material on a substrate; developing a first exposure pattern in the first layer of radiation-sensitive material, the first exposure pattern having been exposed via photolithography, wherein developing the first exposure pattern results in a first patterned layer; positioning the substrate in a processing chamber of a capacitively coupled plasma system and flowing a process gas into the processing chamber; creating plasma in the processing chamber above the substrate and applying negative polarity direct current power to an upper electrode of the plasma processing system such that a beam of ballistic electrons strike the substrate, the ballistic electrons originating from the upper electrode; removing the substrate from the processing chamber and exposing the substrate to an oxygen-containing atmosphere such that a semi-conformal layer of silicon oxide forms on the first patterned layer, the semi-conformal layer of silicon oxide being sufficiently thick such that the first patterned layer is protected from subsequent developing chemicals; forming a second layer of radiation-sensitive material on the substrate; and developing a second exposure pattern in the second layer of radiation-sensitive material, the second exposure pattern having been exposed via photolithography, wherein developing the second exposure pattern results in a second patterned layer such that the second patterned layer and the first patterned layer form a combined pattern.

20 . The method of claim 19 , wherein the first patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist; and
wherein the second patterned layer is selected from the group consisting of negative tone developer resist, positive tone developer resist, and alcohol-based resist.

Assignees

• Tokyo Electron Ltd

Inventors

• Devilliers Anton J

Classifications

• G03F7/40

  Treatment after imagewise removal, e.g. baking · CPC title

• G03F7/0035

  Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface · CPC title

• H05H1/46

  using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) · CPC title

• G03F7/2024 Primary

  of the already developed image · CPC title

• H10P50/242

  of Group IV materials · CPC title