Electronic device for detecting defect in semiconductor package and operating method thereof

Patent metadata

Field	Value
Publication number	US-12593662-B2
Application number	US-202318472364-A
Country	US
Kind code	B2
Filing date	Sep 22, 2023
Priority date	Feb 15, 2023
Publication date	Mar 31, 2026
Grant date	Mar 31, 2026

Abstract

A method of operating an electronic device for detecting a defect due to a particle in an equipment generated during a bonding process of a semiconductor chip is disclosed. For example, the method may include obtaining, by the electronic device, profile data including operation information of the equipment from the equipment during the bonding process. Additionally, the method may include calculating, by the electronic device, characteristic data of bonded chips (e.g., from the bonding process) by pre-processing the profile data. Subsequently, after the bonding process is completed, the method may include selecting, by the electronic device, a coordinate of a defective chip on a substrate as a defect coordinate by comparing result data of a reference chip and peripheral chips based on the characteristic data. In some embodiments, the result data may include respective height value information of the bonded chips.

First claim

What is claimed is:

1 . A method of operating an electronic device, the method comprising:
obtaining, by the electronic device, profile data including operation information of an equipment during a bonding process, wherein the bonding process comprises forming a semiconductor chip based on bonding a plurality of chips on a substrate; calculating, by the electronic device, characteristic data of bonded chips by pre-processing the profile data; and after the bonding process, selecting, by the electronic device, a defective chip of the plurality of chips based on comparing result data of a reference chip and peripheral chips based on the characteristic data, wherein the result data comprises respective height value information of the bonded chips.

2 . The method of claim 1 , wherein the characteristic data comprises first information and second information,
wherein the first information corresponds to a first height value of a respective chip at a moment when a header of the equipment and the respective chip are first touched, and wherein the second information corresponds to a second height value when the respective chip is pressed to a first pressure value.

3 . The method of claim 2 , wherein the characteristic data comprises third information corresponding to a third height value of the respective chip pressed to a second pressure value greater than the first pressure value, and
wherein the second information is calculated based on the first information and the third information.

4 . The method of claim 3 , wherein the selecting of the defective chip comprises:
selecting at least one of the result data of the bonded chips as representative data based on the third information; and correcting deviations between the result data of the bonded chips based on the representative data.

5 . The method of claim 4 , wherein the representative data comprises result data of a chip having a lowest third height value.

6 . The method of claim 4 , wherein the selecting of the at least one of the result data of the bonded chips as representative data based on the third information comprises:
dividing the substrate into a first area and a second area; selecting first representative data with respect to the first area; and selecting second representative data with respect to the second area, wherein the correcting of the deviations between the result data of the bonded chips based on the representative data comprises:
correcting the deviations between result data of chips bonded in the first area based on the first representative data; and
correcting the deviations between result data of chips bonded in the second area based on the second representative data.

7 . The method of claim 4 , wherein the selecting of the defective chip comprises:
selecting a coordinate of the reference chip as a first suspected coordinate of the defective chip; determining whether a second suspected coordinate exists around the first suspected coordinate; and selecting the coordinate of the reference chip as a defect coordinate corresponding to the defective chip based on determining that the second suspected coordinate exists around the first suspected coordinate.

8 . The method of claim 7 , wherein the selecting of the coordinate of the reference chip as the first suspected coordinate at which the defect can occur comprises:
determining whether the reference chip satisfies a first condition by comparing the result data of the reference chip and the peripheral chips based on the first information; determining whether the reference chip satisfies a second condition by comparing the result data of the reference chip and the peripheral chips based on the second information; and selecting the coordinate of the reference chip as the first suspected coordinate based on determining that the reference chip satisfies both the first condition and the second condition.

9 . The method of claim 8 , wherein the determining of whether the reference chip satisfies the first condition comprises:
comparing a first height value of the reference chip with first height values of the peripheral chips; based on comparing the first height value of the reference chip with the first height values of the peripheral chips, determining whether a number of the peripheral chips having a difference of more than a first reference value is greater than or equal to a first number; and determining that the reference chip satisfies the first condition based on determining that the number of the peripheral chips is greater than or equal to the first number.

10 . The method of claim 9 , wherein the determining of whether the reference chip satisfies the second condition comprises:
comparing a second height value of the reference chip with second height values of the peripheral chips; based on comparing the second height value of the reference chip with the second height values of the peripheral chips, determining whether a number of the peripheral chips having a difference of more than a second reference value is greater than or equal to a second number; and determining that the reference chip satisfies the second condition based on determining that the number of the peripheral chips is greater than or equal to the second number.

11 . The method of claim 10 , wherein the determining of whether the second suspected coordinate exists around the first suspected coordinate comprises:
selecting a coordinate of a chip that satisfies the first condition as the second suspected coordinate.

12 . The method of claim 1 , wherein the profile data comprises coordinate information at which the equipment performs the bonding process, pressure information applied to the chip by the equipment, or a combination thereof.

13 . The method of claim 1 , wherein the obtaining of the profile data comprises:
linking information associated with the substrate to the obtained profile data.

14 . An electronic device comprising:
a first device connected to an equipment, the first device comprising a data collector configured to acquire profile data including operation information of the equipment from the equipment performing a bonding process of a semiconductor chip; a second device comprising a pre-processor and a defect detector, wherein the pre-processor is configured to pre-process the profile data to calculate characteristic data of bonded chips and wherein the defect detector is configured to select a defect coordinate of a defective chip on a substrate by comparing result data of a reference chip and peripheral chips based on the characteristic data after the bonding process is completed; and a main server configured to store data generated during the bonding process, wherein the result data comprises respective height value information of the bonded chips.

15 . The electronic device of claim 14 , wherein the characteristic data comprises first information and second information,
wherein the first information corresponds to a first height value of a respective chip at a moment when a header of the equipment and the respective chip are first touched, and wherein the second information corresponds to a second height value when the respective chip is pressed to a first pressure value.

16 . The electronic device of claim 15 , wherein the characteristic data comprises third information corresponding to a third height value of the respective chip pressed to a second pressure value greater than the first pressure value, and
wherein the second information is calculated based on the first information and the third information.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Hyeon Joon
• Lee Dongsoo
• Kim Sunghyun

Classifications

• H10P74/232

  comprising connection or disconnection of parts of a device in response to a measurement · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• G01R31/2868

  Complete testing stations; systems; procedures; software aspects · CPC title

• G01R31/2896

  Testing of IC packages; Test features related to IC packages (containers per se H10W76/10, encapsulations per se H10W74/00) · CPC title

• H10W72/07231

  Techniques · CPC title