Electronic device and method for manufacturing electronic device

Patent metadata

Field	Value
Publication number	US-12588351-B2
Application number	US-202118256084-A
Country	US
Kind code	B2
Filing date	Dec 8, 2021
Priority date	Dec 16, 2020
Publication date	Mar 24, 2026
Grant date	Mar 24, 2026

Abstract

Light reduction in a wiring part connected to an optical device of an electronic device including the optical device is prevented. The electronic device includes an insulating layer, an interlayer connection wiring, and an upper layer wiring. The insulating layer is disposed adjacent to the lower layer wiring and includes a through hole. The interlayer connection wiring is a transparent wiring that is connected to the lower layer wiring in the through hole and is formed into a shape extending to a surface side of the insulating layer. The upper layer wiring is a transparent wiring that is stacked and connected to the interlayer connection wiring extending to the surface side of the insulating layer.

First claim

The invention claimed is:

1 . An electronic device, comprising:
a first insulating layer disposed adjacent to a lower layer wiring, the first insulating layer including a through hole; a transparent interlayer connection wiring connected to the lower layer wiring in the through hole,
wherein the transparent interlayer connection wiring has a shape that extends to a surface side of the first insulating layer;
a transparent upper layer wiring stacked on and connected to the transparent interlayer connection wiring that extends to the surface side of the first insulating layer,
wherein the transparent upper layer wiring is connected to the transparent interlayer connection wiring; and
a second insulating layer adjacent to the first insulating layer and adjacent to a side surface of the transparent interlayer connection wiring and a side surface of the transparent upper layer wiring,
wherein the second insulating layer has a refractive index different from a refractive index of the first insulating layer.

2 . The electronic device according to claim 1 , further comprising an embedded part that includes a transparent member, wherein the embedded part is in a recess of the transparent interlayer connection wiring, formation of the recess is based on the through hole, and wherein the transparent upper layer wiring is adjacent to a surface of the embedded part.

3 . The electronic device according to claim 2 , wherein the embedded part includes an insulator.

4 . The electronic device according to claim 3 , wherein the embedded part includes one of silicon oxide (SiO 2 ), silicon nitride (SIN), silicon oxynitride (SiON), silicon oxycarbide (SiOC), fluorine-doped silicon oxide (SiOF), carbon-doped silicon oxide (SiOCH), niobium oxide (Nb 2 O 5 ), hafnium oxide (HfO 2 ), boron silicate glass (BSG), or boron phosphorus silicate glass (BPSG).

5 . The electronic device according to claim 3 , wherein the embedded part has a refractive index different from the refractive index of the first insulating layer.

6 . The electronic device according to claim 2 , wherein the embedded part includes a conductive member.

7 . The electronic device according to claim 6 , wherein the embedded part includes a member that constitutes the transparent upper layer wiring.

8 . The electronic device according to claim 1 , further comprising a plurality of two-layer wiring parts including the first insulating layer, the transparent interlayer connection wiring, and the transparent upper layer wiring in a stacked arrangement.

9 . The electronic device according to claim 1 , wherein the transparent interlayer connection wiring has a refractive index different from the refractive index of the first insulating layer.

10 . The electronic device according to claim 1 , wherein the through hole has a tapered shape.

11 . The electronic device according to claim 10 , wherein the through hole has the tapered shape having an angle of at least 50 degrees.

12 . The electronic device according to claim 1 , wherein the transparent interlayer connection wiring includes one of indium-tin oxide (ITO), indium-zinc oxide (IZO), tin oxide (SnO x ), zinc oxide (ZnO x ), titanium oxide (TiO x ), or carbon nanotube (CNT).

13 . The electronic device according to claim 1 , wherein the transparent upper layer wiring includes one of indium-tin oxide (ITO), indium-zinc oxide (IZO), tin oxide (SnO x ), zinc oxide (ZnO x ), titanium oxide (TiO x ), or carbon nanotube (CNT).

14 . The electronic device according to claim 1 , further comprising a protective film disposed between the first insulating layer and at least one of the lower layer wiring and the transparent upper layer wiring.

15 . The electronic device according to claim 1 , further comprising a transparent lower layer wiring.

16 . The electronic device according to claim 15 , wherein the transparent lower layer wiring has a shape in which a specific wiring is embedded in a bottom surface.

17 . The electronic device according to claim 1 , further comprising an imaging device configured to generate an image signal based on incident light, wherein the transparent upper layer wiring is configured to transmit a signal to the imaging device.

18 . The electronic device according to claim 17 , further comprising a two-layer wiring part including the first insulating layer, the transparent interlayer connection wiring, and the transparent upper layer wiring, wherein the two- layer wiring part is around the imaging device.

Assignees

• Sony Semiconductor Solutions Corp

Inventors

• Tsuno Hitoshi
• Togashi Hideaki
• Ohkubo Tomohiro
• Kurita Masayuki
• Tamura Syuto
• Kawai Nobuhiro
• Hiramatsu Tomoki
• Joei Masahiro
• Murata Kenichi
• Tsujiai Hideki
• Takada Tetsuro

Classifications

• H10K39/401

  Integrated devices having a three-dimensional layout, e.g. 3D ICs · CPC title

• H10K39/32 Primary

  Organic image sensors · CPC title

• H10W20/48

  Insulating materials thereof · CPC title

• H10W20/40

  Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes · CPC title

• H10W20/01

  Manufacture or treatment · CPC title