Solid-state imaging device and electronic apparatus

Patent metadata

Field	Value
Publication number	US-2020303432-A1
Application number	US-201716086173-A
Country	US
Kind code	A1
Filing date	Feb 22, 2017
Priority date	Mar 31, 2016
Publication date	Sep 24, 2020
Grant date	—

Abstract

To provide a back-illuminated solid-state imaging device that can improve image quality. Provided is a back-illuminated solid-state imaging device that includes at least a semiconductor substrate, an organic photoelectric conversion film, and an optical waveguide. The organic photoelectric conversion film is formed on one of front and back surfaces of the semiconductor substrate. The optical waveguide is formed between the semiconductor substrate and the organic photoelectric conversion film.

First claim

What is claimed is:

1 . A back-illuminated solid-state imaging device comprising at least:
a semiconductor substrate; an organic photoelectric conversion film formed on one of surfaces of the semiconductor substrate; and an optical waveguide formed between the semiconductor substrate and the organic photoelectric conversion film.

2 . The back-illuminated solid-state imaging device of claim 1 , comprising:
a lower electrode provided under the organic photoelectric conversion film; and a through electrode that penetrates the semiconductor substrate to transfer an electric charge, converted through photoelectric conversion of the organic photoelectric conversion film, to the side of the other of the surfaces of the semiconductor substrate, wherein the lower electrode and the through electrode are connected.

3 . The back-illuminated solid-state imaging device of claim 1 , comprising:
a lower electrode provided under the organic photoelectric conversion film; a through electrode adapted to penetrate the semiconductor substrate to transfer an electric charge, converted through photoelectric conversion of the organic photoelectric conversion film, to the side of the other of the surfaces of the semiconductor substrate; and at least an interconnect layer adapted to connect the lower electrode and the through electrode.

4 . The back-illuminated solid-state imaging device of claim 1 , wherein
the semiconductor substrate includes a first photodiode, and at least part of incident light not converted into an electric charge by the organic photoelectric conversion film is converted into an electric charge by the first photodiode.

5 . The back-illuminated solid-state imaging device of claim 4 , wherein
the semiconductor substrate includes a second photodiode, and the second photodiode is provided between the first photodiode and the other of the surfaces of the semiconductor substrate, and at least part of incident light not converted into an electric charge by the organic photoelectric conversion film and the first photodiode is converted into an electric charge by the second photodiode.

6 . The back-illuminated solid-state imaging device of claim 1 , further comprising:
a first insulating film formed between the semiconductor substrate and the organic photoelectric conversion film.

7 . The back-illuminated solid-state imaging device of claim 6 , wherein the optical waveguide and the first insulating film are perpendicularly separated.

8 . The back-illuminated solid-state imaging device of claim 6 , wherein the optical waveguide has a refractive index greater than the first insulating film.

9 . The back-illuminated solid-state imaging device of claim 6 , wherein
the optical waveguide includes SiN and has a refractive index of 1.8 to 2.1, and the first insulating film includes SiO and has a refractive index of 1.3 to 1.5.

10 . The back-illuminated solid-state imaging device of claim 1 , wherein the optical waveguide includes a low-dielectric constant material.

11 . The back-illuminated solid-state imaging device of claim 1 , wherein the number of vertical spectroscopic layers is two or three.

12 . The back-illuminated solid-state imaging device of claim 1 , wherein the thickness from the semiconductor substrate to the organic photoelectric conversion film is 1 μm or less.

13 . The back-illuminated solid-state imaging device of claim 1 , wherein the optical waveguide includes an organic film.

14 . The back-illuminated solid-state imaging device of claim 1 , further comprising:
a second insulating film formed under the optical waveguide.

15 . The back-illuminated solid-state imaging device of claim 1 , further comprising:
a low-dielectric-constant material layer formed under the optical waveguide.

16 . The back-illuminated solid-state imaging device of claim 1 , further comprising:
an inner lens formed between the organic photoelectric conversion film and the optical waveguide.

17 . The back-illuminated solid-state imaging device of claim 1 , further comprising:
a first lower electrode; a second lower electrode connected to the first lower electrode and formed at a lower position than the first lower electrode; a via adapted to connect the first lower electrode and the second lower electrode; and a photodiode formed at a lower position than the second lower electrode, wherein a first distance between the center of the photodiode and the center of the via at a view angle center and a second distance between the center of the photodiode and the center of the via at a view angle end are different.

18 . An electronic apparatus incorporating a back-illuminated solid-state imaging device, the back-illuminated solid-state imaging device including at least
a semiconductor substrate, an organic photoelectric conversion film formed on one of surfaces of the semiconductor substrate, and an optical waveguide formed between the semiconductor substrate and the organic photoelectric conversion film.

Assignees

• Sony Corp

Inventors

• Shibuta Hirokazu

Classifications

• H04N25/70

  SSIS architectures; Circuits associated therewith · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/199 Primary

  Back-illuminated image sensors · CPC title

• H10F39/191 Primary

  Photoconductor image sensors · CPC title

• H10F39/812

  Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region · CPC title