Method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-12575348-B2
Application number	US-202118041726-A
Country	US
Kind code	B2
Filing date	Aug 6, 2021
Priority date	Aug 21, 2020
Publication date	Mar 10, 2026
Grant date	Mar 10, 2026

Abstract

A semiconductor device in which variation in electrical characteristics is small is provided. A first insulator is deposited, a metal oxide is device over the first insulator, a second insulator is device over the metal oxide, an oxide film is device over the second insulator, and heat treatment is performed, whereby hydrogen in the first insulator, the second insulator, and the oxide is transferred and absorbed into the metal oxide. The metal oxide is formed by an ALD method.

First claim

The invention claimed is:

1 . A method for manufacturing a semiconductor device comprising a transistor, comprising:
depositing a first insulating film; depositing a second insulating film comprising hafnium over the first insulating film by an ALD method; depositing a third insulating film over the second insulating film; depositing an oxide semiconductor film over the third insulating film; and performing heat treatment, so that hydrogen atoms in the first insulating film, the third insulating film, and the oxide semiconductor film are transferred and absorbed into the second insulating film, wherein the ALD method comprises:
a first step of introducing a precursor and a carrier/purge gas into a reaction chamber;
a second step of stopping the introduction of the precursor and exhausting the precursor;
a third step of introducing an oxidizing gas into the reaction chamber; and
a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas,
wherein the precursor comprises HfCl 4 , and wherein the oxidizing gas comprises O 3 .

2 . The method for manufacturing a semiconductor device according to claim 1 ,
wherein the first step to the fourth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C.

3 . The method for manufacturing a semiconductor device according to claim 1 , wherein the first step to the fourth step are repeatedly performed.

4 . The method for manufacturing a semiconductor device according to claim 1 , wherein the carrier/purge gas comprises any one or more selected from N 2 , He, Ar, Kr, and Xe.

5 . A method for manufacturing a semiconductor device comprising a transistor, comprising:
depositing a first insulating film; depositing a second insulating film comprising hafnium and zirconium over the first insulating film by an ALD method; depositing a third insulating film over the second insulating film; depositing an oxide semiconductor film over the third insulating film; and performing heat treatment, so that hydrogen atoms in the first insulating film, the third insulating film, and the oxide semiconductor film are transferred and absorbed into the second insulating film, wherein the ALD method comprises:
a first step of introducing a first precursor and a carrier/purge gas into a reaction chamber;
a second step of stopping the introduction of the first precursor and exhausting the first precursor;
a third step of introducing an oxidizing gas into the reaction chamber;
a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas;
a fifth step of introducing a second precursor into the reaction chamber;
a sixth step of stopping the second precursor and exhausting the second precursor;
a seventh step of introducing the oxidizing gas into the reaction chamber; and
an eighth step of stopping the oxidizing gas and exhausting the oxidizing gas,
wherein the first step to the eighth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C., wherein the first precursor comprises HfCl 4 , wherein the second precursor comprises ZrCl 4 , and wherein the oxidizing gas comprises O 3 .

6 . The method for manufacturing a semiconductor device according to claim 5 , wherein the first step to the eighth step are repeatedly performed.

7 . The method for manufacturing a semiconductor device according to claim 5 , wherein the carrier/purge gas comprises any one or more selected from N 2 , He, Ar, Kr, and Xe.

8 . A method for manufacturing a semiconductor device comprising a transistor, comprising:
depositing a first insulating film; depositing a first conductor serving as a gate electrode of the transistor to be embedded in an opening of the first insulating film; depositing a second insulating film comprising hafnium over the first insulating film and the first conductor by an ALD method; depositing a third insulating film over the second insulating film; depositing an oxide semiconductor film over the third insulating film; and performing heat treatment, wherein the ALD method comprises:
a first step of introducing a precursor and a carrier/purge gas into a reaction chamber;
a second step of stopping the introduction of the precursor and exhausting the precursor;
a third step of introducing an oxidizing gas into the reaction chamber; and
a fourth step of stopping the introduction of the oxidizing gas and exhausting the oxidizing gas,
wherein the first step to the fourth step are performed in a temperature range higher than or equal to 210° C. and lower than or equal to 300° C., wherein the precursor comprises HfCl 4 , and wherein the oxidizing gas comprises O 3 .

9 . The method for manufacturing a semiconductor device according to claim 8 , wherein the first step to the fourth step are repeatedly performed.

10 . The method for manufacturing a semiconductor device according to claim 8 , wherein the carrier/purge gas comprises any one or more selected from N 2 , He, Ar, Kr, and Xe.

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Komatsu Yoshihiro
• Ohno Toshikazu
• Yanagisawa Yuichi
• Sasagawa Shinya

Classifications

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• C23C16/56

  After-treatment · CPC title

• C23C16/45529

  specially adapted for making a layer stack of alternating different compositions or gradient compositions · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title