Package structure and method of fabricating the same

Patent metadata

Field	Value
Publication number	US-12564055-B2
Application number	US-202318522259-A
Country	US
Kind code	B2
Filing date	Nov 29, 2023
Priority date	Dec 19, 2019
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

A method of manufacturing a package structure at least includes the following steps. An encapsulant laterally is formed to encapsulate the die and the plurality of through vias. A plurality of first connectors are formed to electrically connect to first surfaces of the plurality of through vias. A warpage control material is formed over the die, wherein the warpage control material is disposed to cover an entire surface of the die. A protection material is formed over the encapsulant and around the plurality of first connectors and the warpage control material. A coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

First claim

What is claimed is:

1 . A method of manufacturing a package structure, comprising:
forming a plurality of through vias around a die; forming an encapsulant laterally encapsulating the die and the plurality of through vias; forming a plurality of first connectors electrically connected to first surfaces of the plurality of through vias; forming a warpage control material over the die, wherein the warpage control material is disposed to cover an entire surface of the die; and forming a protection material over the encapsulant, around the plurality of first connectors and the warpage control material, wherein a coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

2 . The method of claim 1 , wherein the coefficient of thermal expansion of the encapsulant is less than a coefficient of thermal expansion of the warpage control material.

3 . The method of claim 2 , wherein a Young's modulus of the warpage control material is greater than a Young's modulus of the encapsulant, and the Young's modulus of the encapsulant is greater than a Young's modulus of the protection material.

4 . The method of claim 1 , further comprising a dielectric layer disposed between the die and the warpage control material, and between the encapsulant and the protection material.

5 . The method of claim 4 , wherein the plurality of first connectors extend through the dielectric layer to be in contact with the plurality of through vias.

6 . The method of claim 5 , wherein the protection material is formed to further cover a top surface of the warpage control material.

7 . The method of claim 1 , further comprising:
forming a redistribution structure electrically connected to second surfaces of the plurality of through vias, wherein the die is between the warpage control material and the redistribution structure; and forming a plurality of second connectors to electrically connect to the redistribution structure.

8 . The method of claim 1 , further comprising:
disposing the die on an adhesive, wherein the adhesive is sandwiched between the die and the warpage control material.

9 . A method of manufacturing a package structure, comprising:
forming a plurality of through vias around a die; forming an encapsulant laterally encapsulating the die and the plurality of through vias; forming a plurality of first connectors electrically connected to the plurality of through vias; forming a warpage control material over the die, wherein the warpage control material overlaps a periphery of a surface of the die; and forming a protection material over the encapsulant, around the plurality of first connectors and the warpage control material, wherein a coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

10 . The method of claim 9 , wherein the warpage control material covers an interface between the die and the encapsulant, the protection material is formed on the die and around by the warpage control material.

11 . The method of claim 9 , further comprising a dielectric layer disposed between the die and the warpage control material, between the die and the protection material, and between the encapsulant and the protection material.

12 . The method of claim 11 , wherein the plurality of first connectors extend through the dielectric layer to be in contact with the plurality of through vias.

13 . The method of claim 9 wherein the coefficient of thermal expansion of the encapsulant is less than a coefficient of thermal expansion of the warpage control material.

14 . The method of claim 9 , wherein a Young's modulus of the warpage control material is greater than a Young's modulus of the encapsulant, and the Young's modulus of the encapsulant is greater than a Young's modulus of the protection material.

15 . A method of manufacturing a package structure, comprising:
forming an encapsulant to laterally encapsulate a die and a plurality of through vias; forming a plurality of first connectors to electrically connect to the plurality of through vias; forming a warpage control material over a first surface of the die; and forming a protection material over a first surface of the encapsulant and a top surface of the warpage control material, and around the plurality of first connectors and the warpage control material; and forming a first redistribution structure disposed between the die and the warpage control material, and between the encapsulant and the protection material, wherein the plurality of first connectors and the plurality of through vias are in contact with a metallization pattern of the first redistribution structure; wherein a coefficient of thermal expansion of the protection material is less than a coefficient of thermal expansion of the encapsulant.

16 . The method of claim 15 , further comprising disposing the die on an adhesive, wherein the adhesive disposed between the die and the first redistribution structure.

17 . The method of claim 15 , further comprising forming a dielectric layer between the first redistribution structure and the warpage control material, and between the first redistribution structure and the protection material, wherein the plurality of first connectors extend through the dielectric layer to be in contact with the plurality of through vias.

18 . The method of claim 15 , further comprising:
forming a second redistribution structure disposed on a second surface of the die and a second surface of the encapsulant to electrically connect to the plurality of through vias; and forming a plurality of second connectors to electrically connect to the second redistribution structure.

19 . The method of claim 15 , wherein the warpage control material comprises a base material and a plurality of fillers in the base material.

20 . The method of claim 15 , wherein a Young's modulus of the warpage control material is greater than a Young's modulus of the protection material.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Pei Hao-Jan
• Hsieh Ching-Hua
• Lin Hsiu-Jen
• Chen Wei-Yu
• Cheng Chia-Shen
• Tsao Chih-Chiang
• Yu Jen-Jui
• Wong Cheng-Shiuan

Classifications

• H10W74/121

  by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation · CPC title

• H10W74/117

  the substrate having spherical bumps for external connection · CPC title

• H10W74/019 Primary

  using temporary auxiliary substrates (H10W74/017 takes precedence) · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W72/874

  On different surfaces · CPC title