Electrolyte-based field effect transistor and associated method of fabrication

Patent metadata

Field	Value
Publication number	US-12560574-B2
Application number	US-202217858557-A
Country	US
Kind code	B2
Filing date	Jul 6, 2022
Priority date	Jul 7, 2021
Publication date	Feb 24, 2026
Grant date	Feb 24, 2026

Abstract

An electrolyte-based field effect transistor includes a dielectric layer; a source electrode and a drain electrode located on top of the dielectric layer; the electrolyte-based transistor further including an electrolyte layer between and on top of the source electrode and the drain electrode, the part of the electrolyte layer located between the source electrode and the drain electrode being in direct contact with the dielectric layer; and a gate electrode on top of the electrolyte layer, the orthogonal projection of the gate electrode in a plane including the source and drain electrodes being located, at least in part, between the source and the drain electrodes.

First claim

The invention claimed is:

1 . An electrolyte-based field effect transistor comprising:
a dielectric layer; a source electrode and a drain electrode located on top of the dielectric layer; a lithium-based solid-state electrolyte layer between and on top of the source electrode and the drain electrode, a part of the lithium-based solid-state electrolyte layer located between the source electrode and the drain electrode being in direct contact with the dielectric layer, and a gate electrode on top of the lithium-based solid-state electrolyte layer and in direct contact with the electrolyte layer, an orthogonal projection of said gate electrode in a plane comprising the source and drain electrodes being located, at least in part, between the source and the drain electrodes; wherein the lithium-based solid state electrolyte is an oxide solid electrolyte chosen among LiPON, LI 3 PO 4 and Li 3 PO x Se x , or is a sulfide solid electrolyte, or is a solid polymer electrolyte.

2 . The electrolyte-based field effect transistor according to claim 1 , wherein no semi-conductor layer is present between the source electrode and the drain electrode.

3 . The electrolyte-based field effect transistor according to claim 1 , wherein a dielectric material of the dielectric layer has an energy band gap higher than 8 eV.

4 . The electrolyte-based field effect transistor according to claim 1 , wherein a distance between the source electrode and the drain electrode is between 1.5 μm and 5 μm.

5 . The electrolyte-based field effect transistor according to claim 1 , wherein a width of each source electrode and the drain electrode is between 8 μm and 15 μm.

6 . The electrolyte-based field effect transistor according to claim 5 , wherein the width is 10 μm.

7 . The electrolyte-based field effect transistor according to claim 1 , wherein a thickness of the source electrode, the drain electrode and/or the gate electrode is between 200 nm and 400 nm.

8 . The electrolyte-based field effect transistor according to claim 7 , wherein the thickness is 300 nm.

9 . The electrolyte-based field effect transistor according to claim 1 , wherein a thickness of the dielectric layer is between 400 nm and 600 nm.

10 . The electrolyte-based field effect transistor according to claim 9 , wherein the thickness is 500 nm.

11 . The electrolyte-based field effect transistor according to claim 1 , wherein a thickness of a thicker part of the lithium-based solid-state electrolyte layer is between 10 nm and 300 nm.

12 . The electrolyte-based field effect transistor according to claim 11 , wherein the thickness is 200 nm.

Assignees

• Commissariat Energie Atomique

Inventors

• NGUYEN Ngoc-Anh
• Oukassi Sami

Classifications

• H10D30/6758

  characterised by the insulating substrates · CPC title

• H10D30/031

  of thin-film transistors [TFT] · CPC title

• H10N70/881

  Switching materials · CPC title

• H10N70/011

  Manufacture or treatment of multistable switching devices · CPC title

• H10N70/883

  Oxides or nitrides · CPC title