Flexible optoelectronic device and process for manufacturing same

Patent metadata

Field	Value
Publication number	US-12557440-B2
Application number	US-202118016853-A
Country	US
Kind code	B2
Filing date	Jul 16, 2021
Priority date	Jul 22, 2020
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

An optoelectronic device including an optoelectronic circuit including light-emitting diodes, thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes, and the transistors stack further including conductive elements, between and through the insulating layers, the conductive elements connecting at least some of the transistors to the light-emitting diodes The device further includes a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface on the side of the thin-film transistors.

First claim

The invention claimed is:

1 . An optoelectronic device comprising:
an optoelectronic circuit comprising light-emitting diodes; thin-film transistors, and a stack of electrically-insulating layers, said stack being located between the light-emitting diodes and the transistors, said stack further comprising electrically-conductive elements, between and through said electrically-insulating layers, said electrically-conductive elements connecting at least some of the transistors to the light-emitting diodes; and a support having a surface, the support being flexible and/or the surface being curved and non-planar, the optoelectronic circuit being connected to the surface of the support on a thin-film side of the optoelectronic circuit; wherein the light-emitting diodes comprise wire-shaped, conical, or frustoconical semiconductor elements.

2 . The optoelectronic device according to claim 1 , wherein the support comprises electrically-conductive tracks, each electrically-conductive track being connected to one of the transistors.

3 . The optoelectronic device according to claim 2 , further comprising a circuit for controlling the optoelectronic circuit coupled to the electrically-conductive tracks.

4 . The optoelectronic device according to claim 1 , wherein the total thickness of the optoelectronic circuit is in the range from 0.1 μm to 500 μm.

5 . The optoelectronic device according to claim 1 , wherein the thickness of the support is in the range from 5 μm to 1,000 μm.

6 . The optoelectronic device according to claim 1 , wherein the support is at least partly made of polyethylene naphthalate, of polyethylene terephthalate, of polyimide, of cellulose triacetate, of cycloolefin copolymer, of polyetheretherketone, or of a mixture of at least two of these compounds.

7 . The optoelectronic device according to claim 1 , wherein the transistors are distributed in at least one stage of thin-film transistors.

8 . The optoelectronic device according to claim 7 , wherein each stage comprises an electrically-insulating layer forming the gate insulator of all the transistors of this stage.

9 . The optoelectronic device according to claim 1 , wherein, for at least one of the transistors, the source and drain regions and the gate of the transistor are located in a same electrically-insulating layer.

10 . The optoelectronic device according to claim 3 , wherein the control circuit rests on the support.

11 . The optoelectronic device according to claim 1 , wherein the optoelectronic circuit has a monolithic structure.

12 . The optoelectronic device according to claim 1 , comprising a single copy of the optoelectronic circuit.

13 . The optoelectronic device according to claim 1 , comprising a plurality of copies of the optoelectronic circuit attached to the support and spaced apart from one another.

14 . The optoelectronic device according to claim 13 , wherein said plurality of copies of the optoelectronic circuit are arranged in rows and in columns, the electrically-conductive tracks extending along the rows and the columns, each electrically-conductive tracks being connected to transistors of a plurality of optoelectronic circuits.

15 . A method of manufacturing the optoelectronic device according to claim 1 , comprising the forming of an optoelectronic circuit comprising the successive steps of:
a) forming light-emitting diodes; b) forming, on the light-emitting diodes, a stack of electrically-insulating layers, said stack further comprising electrically-conductive elements between and through said electrically-insulating layers; and c) forming, on said stack, thin-film transistors, said stack being located between the light-emitting diodes and the transistors, said electrically-conductive elements connecting at least some of the transistors to the light-emitting diodes, the assembly comprising the light-emitting diodes, the stack, and the thin-film transistors forming an optoelectronic circuit.

16 . The method of claim 15 , further comprising the following step, after step c):
d) attaching the optoelectronic circuit to the surface of the support, the support being flexible and/or the surface being curved and non-planar.

17 . The method according to claim 15 , wherein the optoelectronic circuit is formed in a plurality of copies forming a one-piece structure, the method further comprising the following step, after step c):
e) separation of each copy of the optoelectronic circuit.

18 . The method according to claim 15 , wherein the total thickness of the optoelectronic circuit is in the range from 0.1 μm to 500 μm.

19 . The method according to claim 15 , wherein step a) comprises the forming of wire-shaped, conical, or frustoconical semiconductor elements.

20 . The method according to claim 19 , wherein step a) comprises the forming of electrically-conductive or semiconductor seed pads on a substrate and the growth of the semiconductor elements on the seed pads.

21 . The method according to claim 15 , wherein steps b) and c) are carried out at temperatures smaller than 180° C.

Assignees

• Aledia

Inventors

• Robin Ivan-Christophe
• Mayer Frédéric

Classifications

• H10W90/00 Primary

  Package configurations · CPC title

• H10H20/8506

  Containers · CPC title

• H10H20/857

  Interconnections, e.g. lead-frames, bond wires or solder balls · CPC title

• H10H20/00

  Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED] · CPC title

• H10H20/819 Primary

  characterised by their shape, e.g. curved or truncated substrates · CPC title