Radiation based patterning methods

Patent metadata

Field	Value
Publication number	US-12554195-B2
Application number	US-202418428593-A
Country	US
Kind code	B2
Filing date	Jan 31, 2024
Priority date	Jun 1, 2010
Publication date	Feb 17, 2026
Grant date	Feb 17, 2026

Abstract

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

First claim

What we claim is:

1 . A method of forming a radiation patternable coating, the method comprising:
depositing a coating composition comprising metal ions with radiation sensitive ligands onto a substrate comprising a silicon wafer and one or more structures patterned along a surface of the silicon wafer to form the radiation patternable coating.

2 . The method of claim 1 wherein the metal of the metal ions comprises Cu, Al, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, In, Sn, Sb, Hf, Ta, W, Ir, Pt, La, Ce, Pr, Nb, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or a combination thereof.

3 . The method of claim 1 wherein the metal of the metal ions comprises Sn.

4 . The method of claim 1 wherein the coating composition comprises a blend of metal ions.

5 . The method of claim 1 wherein the silicon wafer is a single crystal silicon wafer.

6 . The method of claim 1 wherein the depositing comprises spin coating.

7 . The method of claim 1 wherein the depositing is sequentially performed two to five times to form the radiation patternable coating.

8 . The method of claim 1 wherein the radiation patternable coating has a thickness from about 1 nm to about 40 nm.

9 . The method of claim 1 wherein the radiation patternable coating has a thickness from about 1 nm to about 25 nm.

10 . The method of claim 1 wherein the radiation patternable coating comprises a metal suboxide.

11 . The method of claim 1 wherein the one or more structures comprise a developed patterned coating material.

12 . The method of claim 1 wherein the one or more structures comprise ions, a dielectric, a semiconductor, a dopant, or a conductor.

13 . The method of claim 1 wherein the one or more structures comprise a step.

14 . The method of claim 1 wherein the substrate comprises an etched silicon wafer.

15 . The method of claim 1 , further comprising patterning the radiation patternable coating to integrate the one or more structures.

16 . The method of claim 1 , further comprising
irradiating the radiation patternable coating along pattern to form a coating material with a latent image having irradiated coating material and un-irradiated coating material according to the pattern; developing the coating material with the latent image to remove the un-irradiated coating material to form a developed patterned coating material having openings to the substrate; and depositing a deposited material through the openings to the substrate or etching the substrate through the openings.

17 . The method of claim 16 wherein the irradiating is performed with EUV radiation at a dose of no more than about 100 mJ/cm 2 .

18 . The method of claim 16 wherein the deposited material comprises ions, a dielectric, a semiconductor, a dopant, or a conductor.

19 . The method of claim 16 wherein depositing the deposited material comprises chemical vapor deposition (CVD), sputtering, or physical vapor deposition (PVD).

20 . A method of forming a radiation patternable coating, the method comprising:
depositing a coating composition comprising metal ions with radiation sensitive ligands onto a substrate comprising a silicon wafer and one or more structures to form the radiation patternable coating, wherein the one or more structures comprise a step.

21 . The method of claim 20 wherein the step comprises an increase in height of no more than about 150 nm.

22 . The method of claim 20 wherein the step comprises sharp edges.

23 . The method of claim 20 wherein the step comprises a thin film transistor gate dielectric structure.

Assignees

• Inpria Corp

Inventors

• Stowers Jason K
• Telecky Alan J
• Keszler Douglas A
• Grenville Andrew

Classifications

• G03F7/327

  Non-aqueous alkaline compositions, e.g. anhydrous quaternary ammonium salts · CPC title

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/0042 Primary

  with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence) · CPC title

• Y10T428/24355

  Continuous and nonuniform or irregular surface on layer or component [e.g., roofing, etc.] · CPC title

• G03F7/0047

  characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing · CPC title