Oxidants and strained-ring precursors

Patent metadata

Field	Value
Publication number	US-12550643-B2
Application number	US-202117355154-A
Country	US
Kind code	B2
Filing date	Jun 22, 2021
Priority date	Jun 22, 2021
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

First claim

What is claimed is:

1 . A method of depositing a silicon-containing material on a semiconductor substrate, the method comprising exposing the semiconductor substrate to a cyclic silicon precursor and a reactant, the cyclic silicon precursor includes a 3- or 4-membered ring containing silicon,
wherein the cyclic silicon precursor has a general formula of:

where X and Y are independently selected from SiH2, NH, S, or Se, wherein at least one of X or Y is S, and R1, R2, R3, and R4 are independently selected from an alkyl group.

2 . The method of claim 1 , wherein the silicon-containing material comprises silicon nitride and the reactant is selected from the group consisting of hydrazine, alkyl hydrazine, allyl hydrazine, hydrogen (H2), ammonia (NH 3 ), R′NH 2 , R′ 2 NH, R′ 3 N, R′ 2 SINH 2 , (R′sSi) 2 NH, and (R′ 3 Si) 3 N, where each R′ is independently H or an alkyl group having 1-12 carbon atoms.

3 . The method of claim 1 , wherein the silicon-containing material comprises silicon nitride comprising a nitrogen containing content in a range of from 1% to 40% on an atomic basis.

4 . The method of claim 1 , wherein the cyclic silicon precursor comprises

5 . The method of claim 1 , wherein the silicon-containing material comprises silicon oxide, and the reactant is selected from the group consisting of an oxaziridine and a P/S/N oxide.

6 . The method of claim 5 , wherein the reactant is an oxaziridine.

7 . The method of claim 6 , wherein the silicon oxide film comprises greater than 98 atomic % of silicon and oxygen atoms.

8 . The method of claim 6 , wherein the oxaziridine comprises a compound with a general formula of:

where R 1 , R 2 and R 3 are independently selected from H, SO 2 NO 2 , CN, C1-C8 alkyl, C1-C8 perfluoroalkyl, pyridine, aryl, substituted aryl, perfluoroaryl, SO 2 -NO 2 substituted aryl, or R 2 and R 3 are combined to form a carbonyl.

9 . The method of claim 6 , wherein the oxaziridine comprises one or more of:

10 . The method of claim 6 , wherein the oxaziridine is bicyclic.

11 . The method of claim 10 , wherein the oxaziridine comprises one or more of:

12 . The method of claim 5 , wherein the P/S/N oxide comprises a compound with a general formula of:

where R 4 , R 5 and R 6 are independently selected from H, alkyl, or aryl, and R 4 and R 5 may join to form a three to six membered ring including at least one P, S or N heteroatom.

13 . The method of claim 12 , wherein

comprises one or more of H 3 PO, (CH 3 ) 3 PO, (C 2 H 5 ) 3 PO, MPPO (3-methyl-1-phenyl-2-phospholene 1-oxide), 3-methyl-1-phenyl-2-phospholene 1-oxide, neopentylene phosphite (5,5-Dimethyl-1,3,2-dioxaphosphinane 2-oxide), HASPO-1 (4,4,5,5-Tetramethyl-1,3,2-dioxaphospholane 2-oxide), 2-Methyl-4,4,5,5-tetramethyl-1,3,2-dioxaphospholan-2-one, or diphenylphosphine oxide.

14 . The method of claim 12 , wherein

comprises one or more of H 2 SO, or MPSO (methyl phenyl sulfoxide).

15 . The method of claim 12 , wherein

comprises one or more of H 3 N→O, trimethylamine n-oxide, pyridine-n-oxide, TEMPO ((2,2,6,6-Tetramethylpiperidin-1-yl)oxyl), N-hydroxyphthalimide, or 4-methylmorpholine n-oxide.

16 . A method of depositing a silicon-containing material on a semiconductor substrate, the method comprising exposing the semiconductor substrate to a cyclic silicon precursor and a reactant, the cyclic silicon precursor includes a 3- or 4-membered ring containing silicon,
wherein the cyclic silicon precursor has a general formula of:

where X and Y are independently selected from SiH 2 , NH, S, or Se, and R 1 , R 2 , R 3 , and R 4 are independently selected from an alkyl group, and wherein the silicon-containing material comprises silicon oxide, and the reactant is a P/S/N oxide.

17 . The method of claim 16 , wherein X is S and Y is NH.

18 . The method of claim 17 , wherein the P/S/N oxide comprises a compound with a general formula of:

where R 4 , R 5 and R 6 are independently selected from H, alkyl, or aryl, and R 4 and R 5 may join to form a three to six membered ring including at least one P, S or N heteroatom.

19 . The method of claim 18 , wherein

comprises one or more of H 3 PO, (CH 3 ) 3 PO, (C 2 H 5 ) 3 PO, MPPO (3-methyl-1-phenyl-2-phospholene 1-oxide), 3-methyl-1-phenyl-2-phospholene 1-oxide, neopentylene phosphite (5,5-Dimethyl-1,3,2-dioxaphosphinane 2-oxide), HASPO-1 (4,4,5,5-Tetramethyl-1,3,2-dioxaphospholane 2-oxide), 2-Methyl-4,4,5,5-tetramethyl-1,3,2-dioxaphospholan-2-one, or diphenylphosphine oxide,
wherein

comprises one or more of H 2 SO, or MPSO (methyl phenyl sulfoxide), and
wherein

comprises one or more of H 3 N→O, trimethylamine n-oxide, pyridine-n-oxide, TEMPO ((2,2,6,6-Tetramethylpiperidin-1-yl)oxyl), N-hydroxyphthalimide, or 4-methylmorpholine n-oxide.

Assignees

• Applied Materials Inc
• Nat Univ Singapore

Inventors

• Barik Chandan Kr
• Yong Doreen Wei Ying
• Sudijono John
• Trinh Cong
• Bhuyan Bhaskar Jyoti
• Haverty Michael
• Kaliappan Muthukumar
• Chen Yingqian
• Tummanapelli Anil Kumar
• Wong Richard Ming Wah

Classifications

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/69215 Primary

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6681 Primary

  the precursor containing a compound comprising Si · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title