Organoaminosilane precursors and methods for depositing films comprising same

US2015087139A1 · US · A1

Patent metadata
FieldValue
Publication numberUS-2015087139-A1
Application numberUS-201414483751-A
CountryUS
Kind codeA1
Filing dateSep 11, 2014
Priority dateSep 20, 2013
Publication dateMar 26, 2015
Grant date

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  5. First independent claim

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Abstract

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Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

First claim

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1 . An organoaminosilane comprising a compound represented by one of following Formulae A through E below: wherein R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group; wherein R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group, R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic alkylene group, a C 3 to C 10 hetero-cyclic alkylene group, a C 5 to C 10 arylene group, and a C 5 to C 10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R 3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom. 2 . The organoaminosilane of claim 1 wherein the R 1 and R 2 are linked together to form a ring. 3 . The organoaminosilane of claim 1 comprising the compound having Formula A wherein R 1 and R 2 are the same and selected from the group consisting of methyl, ethyl, iso-propyl, n-propyl, and sec-butyl and wherein R 3 is selected from the group consisting of methylene and ethylene; n=1; and m=0. 4 . The organoaminosilane of claim 1 comprising the compound having Formula D wherein R 1 is not isopropyl (Pr i ) when R 3 is ethylene or propylene. 5 . The organoaminosilane of claim 1 comprising the compound having Formula A wherein the compound is at least one selected from the group consisting of: 1-dimethylamino-1,3-disilapropane, di-isopropylamino-1,3-disilapropane, 1-di-secbutylamino-1,3-disilane propane, 1-di-isobutylamino-1,3-disilapropane, 1-di-tertpentylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-di-isopropylamino-1,4-disilabutane, 1,3-bis(dimethylamino)-1,3-disilapropane, 1,3-bis(di-isopropylamino)-1,3-disilapropane, 1,3-bis(di-sec-butylamino)-1,3-disilapropane, 1,3-bis(di-isobutylamino-1,3-disilapropane, 1,3-bis(di-tert-pentylamino)-1,3-disilapropane, 1,3-bis(diethylamino)-1,3-disilapropane, 1,4-bis(dimethylamino)-1,4-disilabutane, 1,4-bis(diethylamino)-1,4-disilabutane, 1,4-bis(di-isopropylamino)-1,3-disilabutane, 1,4-bis(di-sec-butylamino)-1,4-disilabutane, 1,4-bis(di-isobutylamino)-1,4-disilabutane, 1,4-bis(iso-propyl-n-propyl-amino)-1,4-disilabutane, 1,3-bis(ethylmethylamino)-1,3-disilabutane, and 1,4-bis(ethylmethylamino)-1,4-disilabutane. 6 . The organoaminosilane of claim 1 selected from the group consisting of 1-di-isopropylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, phenylethylamino-1,4-disilabutane, 1-di-isopropylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane. 7 . A composition comprising: (a) at least one organoaminosilane comprising a compound represented by one of following Formulae A through E below: wherein R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group; wherein R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group, R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic alkylene group, a C 3 to C 10 hetero-cyclic alkylene group, a C 5 to C 10 arylene group, and a C 5 to C 10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R 3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and (b) a solvent wherein the solvent has a boiling point and wherein the difference between the boiling point of the solvent and that of the at least one organoaminosilane is 40° C. or less. 8 . The organoaminosilane precursor of claim 7 comprising at least one selected from the group consisting of 1-dimethylamino-1,4-disilabutane, 1-diethylamino-1,4-disilabutane, 1-ethylmethylamino-1,4-disilabutane, 1-di-isopropylamino-1,4-disilabutane, 1-di-sec-butylamino-1,4-disilabutane, 1-phenylmethylamino-1,4-disilabutane, 2,6-dimethylpiperidino-1,4-disilabutane, phenylethylamino-1,4-disilabutane, 1-dimethylamino-1,3-disilapropane, 1-diethylamino-1,3-disilapropane, 1-ethylmethylamino-1,3-disilapropane opylamino-1,3-disilapropane, 1-di-sec-butylamino-1,3-disilapropane, 1-phenylmethylamino-1,3-disilapropane, 2,6-dimethylpiperidino-1,3-disilapropane, and phenylethylamino-1,3-disilapropane. 9 . The solvent of claim 7 comprising at least one selected from the group consisting of ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, and tertiary aminoether. 10 . A method for forming a silicon-containing film on at least one surface of a substrate by a deposition process selected from a chemical vapor deposition process and an atomic layer deposition process, the method comprising: providing the at least one surface of the substrate in a reaction chamber; introducing at least one organoaminosilane precursor comprising a compound represented by one of following Formulae A through E below: wherein R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group; wherein R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group, R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic alkylene group, a C 3 to C 10 hetero-cyclic alkylene group, a C 5 to C 10 arylene group, and a C 5 to C 10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R 3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and introducing a nitrogen-

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Classifications

  • the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

  • the material being a silicon oxide, e.g. SiO2 · CPC title

  • the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title

  • the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

  • being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

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What does patent US2015087139A1 cover?
Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C.…
Who is the assignee on this patent?
Air Prod & Chem
What technology area does this patent fall under?
Primary CPC classification H10P14/6687. Mapped technology areas include Electricity.
When was this patent published?
Publication date Thu Mar 26 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).