Composition for depositing a silicon-containing layer and method of depositing a silicon-containing layer using the same

Patent metadata

Field	Value
Publication number	US-12546001-B2
Application number	US-202318189751-A
Country	US
Kind code	B2
Filing date	Mar 24, 2023
Priority date	Mar 25, 2022
Publication date	Feb 10, 2026
Grant date	Feb 10, 2026

Abstract

Provided is a precursor for depositing a silicon-containing layer, the silicon precursor having a heterocyclic group, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.

In Formula 1, A 1 is a heterocyclic group including one or more nitrogen, and R 1 is hydrogen or an alkyl group of 1˜6 carbon atoms. R 2 may be an alkyl group of 1˜6 carbon atoms. R 3 may be an alkyl group of 1˜6 carbon atoms.

First claim

What is claimed is:

1 . A method of depositing a silicon-containing layer, the method comprising:
feeding a silicon precursor into a process chamber in which a substrate is loaded such that the silicon precursor is adsorbed onto the substrate, the silicon precursor represented by Formula 1

wherein
the R 1 is hydrogen or an alkyl group of 1˜6 carbon atoms, and
the R 2 and the R 3 are each independently an alkyl group of 1˜6 carbon atoms, and
wherein the silicon precursor is thermally stable at 500° C. or greater under atmospheric pressures, and
wherein the A 1 is a heterocyclic group represented by Formula 3

in Formula 3, the p and the q are each independently an integer of 0 to 2, and
the A 2 is an oxygen atom (O) or NR 4 , where the R 4 is an alkyl group of 1˜6 carbon atoms.

2 . The method of claim 1 , wherein the heterocyclic group comprises 2 to 8 carbon atoms,
the R 1 is hydrogen or an alkyl group of 1˜4 carbon atoms, and the R 2 and the R 3 are each independently an alkyl group of 1˜4 carbon atoms.

3 . The method of claim 1 , wherein the silicon precursor has at least one structure among Formulae 2-1, and 2-6 to 2-9:

4 . The method of claim 1 , wherein, during the feeding of the silicon precursor, the substrate is maintained at a temperature of about 550° C.-700° C.

5 . The method of claim 1 , further comprising:
purging the process chamber to remove the silicon precursor which is not adsorbed on the substrate; feeding a reaction gas into the purged process chamber to react with the silicon precursor adsorbed on the substrate; and purging the reaction gas which is unreacted with the silicon precursor.

6 . The method of claim 5 , wherein the reaction gas is at least one of oxygen, ozone, oxygen plasma, hydrogen, or hydrogen plasma.

7 . The method of claim 5 , wherein the purging of the silicon precursor not adsorbed and the purging of the unreacted reaction gas include feeding nitrogen gas into the process chamber.

8 . The method of claim 1 , wherein the silicon-containing layer is a silicon oxide layer.

9 . A method of depositing a silicon-containing layer, the method comprising:
feeding a substrate into a process chamber; heating the substrate to a temperature of about 550° C. to about 700° C.; and repeating a deposition process cycle until the silicon-containing layer is a set thickness, wherein the deposition process cycle comprises
feeding a silicon precursor into the process chamber after the heating of the substrate such that the silicon precursor is adsorbed onto the heated substrate, the silicon precursor represented by Formula 1
purging the process chamber of the silicon precursor which is not adsorbed on the heated substrate;
feeding a reaction gas into the purged process chamber to react with the silicon precursor adsorbed on the heated substrate; and
purging the reaction gas which is unreacted with the silicon precursor,

wherein
the R 1 is hydrogen or an alkyl group of 1˜6 carbon atoms, and
the R 2 and the R 3 are each independently an alkyl group of 1˜6 carbon atoms, and
wherein the substrate is maintained at about 550° C.-700° C. during the feeding of the silicon precursor into the process chamber, and
wherein the silicon precursor is thermally stable at 500° C. or greater under atmospheric pressures, and
wherein the A 1 is a heterocyclic group represented by Formula 3

in Formula 3, the p and the q are each independently an integer of 0 to 2, and
the A 2 is an oxygen atom (O) or NR 4 , where the R 4 is an alkyl group of 1˜6 carbon atoms.

Assignees

• Samsung Electronics Co Ltd
• Dnf Co Ltd

Inventors

• Hwang Sunhye
• Kim Sung Gi
• Lee Jihyun
• Cho Yujin
• Son Seung
• Lee Gyun Sang
• Cho Younjoung
• Hwang Byungkeun

Classifications

• C23C16/401

  containing silicon · CPC title

• C23C16/4408

  by purging residual gases from the reaction chamber or gas lines · CPC title

• C23C16/45527

  characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations · CPC title

• C07F7/10

  containing nitrogen {having a Si-N linkage} · CPC title

• C07F7/1804

  Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896) · CPC title