High temperature silicon oxide atomic layer deposition technology

Patent metadata

Field	Value
Publication number	US-9875888-B2
Application number	US-201514872775-A
Country	US
Kind code	B2
Filing date	Oct 1, 2015
Priority date	Oct 3, 2014
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

Processes for depositing SiO 2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

First claim

What is claimed is:

1. A method of depositing a film comprising: positioning a wafer having a surface within a reaction chamber comprising a plurality of processing regions, each of the plurality of processing regions separated from adjacent processing regions by a gas curtain, and the silicon precursor and the oxygen plasma and/or oxygen source gas are flowed into separate processing regions, each of the gas curtains comprises a purge gas flow with a vacuum source on each side of the purge gas flow;
heating the wafer to a predetermined temperature within a reaction chamber; exposing at least a portion of the wafer to a silicon precursor for a predetermined period of time to form a silicon layer on the wafer, the silicon precursor comprising a compound with the general formula R 3 Si:NY 3 , wherein each R is independently selected from hydrogen, a halide selected from the group consisting of Cl, Br and I, a linear or branched C 1 -C 10 alkyl group, a linear or branched C 1 -C10 alkoxy group, and a C 6 -C 10 aryl group, and each Y is independently a linear or branched C 1 -C 10 alkylsilyl group, and/or a C 6 -C 10 aryl group;
exposing at least a portion of the wafer to an oxygen plasma and/or an oxygen source gas to react with the silicon layer on the wafer to form a silicon oxide film.

2. The method of claim 1 , wherein the predetermined temperature of the wafer is in a range of 50° C. to 1000° C.

3. The method of claim 1 , wherein a compound with the formula Me 3 Si:L, where Me is a methyl group and L is a primary or the predetermined temperature of the wafer is in a range of 400° C. to 700° C.

4. The method of claim 3 , which further comprises heating the silicon precursor to a temperature in the range of 20° C. to 200° C. to provide the continuous stream of the silicon precursor as a vapor to the reaction chamber.

5. The method of claim 1 , wherein the stream of silicon precursor passes into two or more processing regions, and the oxygen plasma and/or an oxygen source gas is provided in two or more different processing regions, wherein the silicon precursor is flowed into processing regions that alternate spatially with the processing regions in which the oxygen plasma and/or oxygen source gas flow.

6. The method of claim 1 , wherein the wafer surface comprises one or more device features with an aspect ratio in the range of about 10:1 to about 100:1, and the silicon precursor forms a conformal layer on the one or more device features.

Assignees

• Applied Materials Inc

Inventors

• Yan Wenbo
• Trinh Cong
• Li Ning
• Nguyen Victor
• Balseanu Mihaela
• Xia Li-Qun
• Saly Mark

Classifications

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6538

  by exposure to UV light · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339 Primary

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title