Intelligent integrated assembly and transfer apparatus for semiconductor light emitting device
US-2021358893-A1 · Nov 18, 2021 · US
Electrode structure of roller unit for transferring semiconductor light-emitting element and intelligent integrated assembling and transferring device comprising same
US12538736B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12538736-B2 |
| Application number | US-202118275548-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 3, 2021 |
| Priority date | Feb 3, 2021 |
| Publication date | Jan 27, 2026 |
| Grant date | Jan 27, 2026 |
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- Title
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Abstract
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Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an adhesive film disposed between the roller rotating part and the assembly substrate, penetration electrodes penetrating the assembly substrate and roller pad electrodes disposed on the roller rotating part and electrically connected to the penetration electrodes.
First claim
Opening claim text (preview).
The invention claimed is: 1 . An electrode structure of a transfer roller part of a semiconductor light emitting device comprising: a roller rotating part; an assembly substrate mounted on the roller rotating part; an adhesive film disposed between the roller rotating part and the assembly substrate; a penetration electrode penetrating the assembly substrate; and a roller pad electrode disposed on the roller rotating part and electrically connected to the penetration electrode. 2 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 1 , wherein the assembly substrate comprises a base, a plurality of assembly electrodes and assembly pad electrodes disposed on the base, and a dielectric layer on the base, and wherein the penetration electrode penetrates the base and the adhesive film and is electrically connected to the assembly pad electrodes. 3 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 2 , wherein the roller pad electrode comprises a first pad electrode disposed on a first surface of the roller rotating part, a second pad electrode disposed on a side surface of the roller rotating part, and a third pad electrode disposed on a second surface of the roller rotating part. 4 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 1 , wherein the roller pad electrode comprises a first pad electrode disposed on a first surface of the roller rotating part, a second pad electrode disposed on a side surface of the roller rotating prat, and a third pad electrode disposed on a second surface of the roller rotating part. 5 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 1 , wherein the assembly substrate comprises a base, a plurality of assembly electrodes and assembly pad electrodes disposed on the base, and a dielectric layer on the base, and wherein the dielectric layer is disposed to cover the plurality of assembly electrodes. 6 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 5 , wherein the dielectric layer is disposed to cover the plurality of assembly electrodes and the assembly pad electrodes. 7 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 4 , wherein the roller pad electrode comprises a second-first pad electrode disposed on a first surface of the roller rotating part; a second-third pad electrode disposed on a second surface of the roller rotating part, and a second-second pad electrode disposed between the second-first pad electrode and the second-third pad electrode. 8 . The electrode structure of the transfer roller part of the semiconductor light emitting device according to claim 7 , wherein the second-second pad electrode is configured to pass through the roller rotating part. 9 . An intelligent assembly-transfer integration device comprising: a fluid chamber accommodating semiconductor light emitting devices; an assembly substrate on which the semiconductor light emitting devices are assembled; a roller part on which the assembly substrate is mounted and rotated; and an assembly inspection part for inspecting the semiconductor light emitting devices assembled on the assembly substrate, wherein the roller part comprises an electrode structure of a transfer roller part of a semiconductor light emitting device according to claim 1 .
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Pressing using at least one press band · CPC title
characterised by the partial melting of at least one layer · CPC title
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Frequently asked questions
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- What does patent US12538736B2 cover?
- Embodiments relate to an electrode structure of a transfer roller part of a semiconductor light emitting device and an intelligent assembly-transfer integration device including the same. Electrode structure of transfer roller part of semiconductor light emitting device according to an embodiment can include a roller rotating part, an assembly substrate mounted on the roller rotating part, an a…
- Who is the assignee on this patent?
- Lg Electronics Inc
- What technology area does this patent fall under?
- Primary CPC classification H01L21/67144. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).