Etching method and apparatus
US-2020312669-A1 · Oct 1, 2020 · US
Etching method and etching device
US12538728B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-12538728-B2 |
| Application number | US-202117997155-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 15, 2021 |
| Priority date | Apr 28, 2020 |
| Publication date | Jan 27, 2026 |
| Grant date | Jan 27, 2026 |
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Abstract
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An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film.
First claim
Opening claim text (preview).
What is claimed is: 1 . An etching method of supplying etching gases to a substrate to etch a surface of the substrate, the etching method comprising: a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film; and a first etching step of supplying a first etching gas, which is one of the etching gases and is a fluorine-containing gas, and the amine gas to the substrate to etch the oxygen-containing silicon film. 2 . The etching method of claim 1 , wherein the first etching step is performed after the protection step. 3 . The etching method of claim 2 , further comprising: a second etching step of supplying a second etching gas, which is one of the etching gases, to etch a film to be etched, which is provided on the substrate, wherein the protection step is performed before the second etching step, and the protective film prevents etching by the second etching gas. 4 . The etching method of claim 3 , wherein the oxygen-containing silicon film includes a first oxygen-containing silicon film and a second oxygen-containing silicon film, wherein the protection step includes a step of forming the protective film on a surface of the first oxygen-containing silicon film, and wherein the first etching step includes a step of etching the second oxygen-containing silicon film. 5 . The etching method of claim 4 , wherein a film including a hole, which opens to each of the film to be etched and the first oxygen-containing silicon film, is interposed between the film to be etched and the first oxygen-containing silicon film in the substrate, wherein the protection step includes a step of forming the protective film in the hole to block the hole, and wherein the second etching step includes a step of supplying the second etching gas in a state the hole has been blocked with the protective film. 6 . The etching method of claim 5 , wherein the film blocking the hole is a third oxygen-containing silicon film. 7 . The etching method of claim 5 , wherein the film including the hole is a porous film. 8 . The etching method of claim 3 , wherein the second etching step includes a step of etching the film to be etched which covers a second oxygen-containing silicon film by supplying the second etching gas to the film to be etched. 9 . The etching method of claim 3 , wherein the film to be etched is a silicon film. 10 . The etching method of claim 1 , wherein the oxygen-containing silicon film is a silicon oxide film. 11 . The etching method of claim 1 , wherein the first etching gas is hydrogen fluoride gas.
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H01L21/31144Primary
Electricity · mapped topic
- H10P72/0421Primary
for drying etching · CPC title
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- What does patent US12538728B2 cover?
- An etching method of supplying etching gases to a substrate to etch a surface of the substrate, includes a protection step of supplying amine gas to the substrate having an oxygen-containing silicon film to form a protective film for preventing etching by the etching gases on a surface of the oxygen-containing silicon film, for protecting the oxygen-containing silicon film, and a first etching …
- Who is the assignee on this patent?
- Tokyo Electron Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L21/31144. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 27 2026 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).