Metal matrix composite layers having graded filler content for heat dissipation from integrated circuit devices

Patent metadata

Field	Value
Publication number	US-12532739-B2
Application number	US-202217685063-A
Country	US
Kind code	B2
Filing date	Mar 2, 2022
Priority date	Mar 2, 2022
Publication date	Jan 20, 2026
Grant date	Jan 20, 2026

Abstract

An integrated circuit assembly may be fabricated to include an integrated circuit device having a backside surface and a metal matrix composite layer on the backside surface, wherein the metal matrix composite layer has a filler material disposed therein that has a graded content to reduce the coefficient of thermal expansion at the backside surface of the integrated circuit device. The filler material may have at least two filler material particle constituents having different particle diameters, wherein a first filler material particle constituent that has the smaller average diameter is closest to the backside surface of the integrated circuit device and wherein a second filler material constituent that has the larger average diameter is farthest from the backside surface of the integrated circuit device.

First claim

What is claimed is:

1 . An apparatus, comprising:
a metal matrix composite layer having an inner surface and an opposing outer surface, wherein the metal matrix composite layer comprises:
a metal material; and
a filler material dispersed in the metal material, wherein the filler material comprises a plurality of first filler material particles having an average diameter and an average distance from the inner surface of the metal matrix composite layer and a plurality of second filler material particles having an average diameter and an average distance from the inner surface of the metal matrix composite layer, wherein the plurality of first filler material particles is the same material as the plurality of second filler material particles, wherein the average diameter of the plurality of first filler material particles is smaller than the average diameter of the plurality of second filler material particles, and wherein the average distance of the plurality of first filler material particles from the inner surface of the metal matrix composite layer is smaller than the average distance of the plurality of second filler material particles from the inner surface of the metal matrix composite layer.

2 . The apparatus of claim 1 , wherein the metal material comprises one of copper, aluminum, nickel, silver, or gold.

3 . The apparatus of claim 1 , wherein the plurality of first filler material particles and the plurality of second filler material particles comprise one of diamond, aluminum nitride, and silicon carbide.

4 . The apparatus of claim 1 , wherein the plurality of first filler material particles and the plurality of second filler material particles both comprise diamond.

5 . The apparatus of claim 4 , wherein the metal material comprises silver.

6 . The apparatus of claim 1 , further comprising a plurality of intermediate filler material particles within the metal material, wherein the plurality of intermediate filler material particles is the same material as the plurality of first filler material particles and the plurality of second filler material particles, wherein the plurality of intermediate filler material particles has an average diameter that is larger than the average diameter of the plurality of first filler material particles and that is smaller than the average diameter of the plurality of second filler material particles, and wherein the plurality of intermediate filler material particles has an average distance from the inner surface of the metal matrix composite layer that is greater than the average distance of the plurality of first filler material particles from the inner surface of the metal matrix composite layer and that is less than the average distance of the plurality of second filler material particles from the inner surface of the metal matrix composite layer.

7 . The apparatus of claim 1 , further comprising:
at least one integrated circuit device coupled to the inner surface of the metal matrix composite layer.

8 . The apparatus of claim 7 , wherein the metal matrix composite layer abuts the integrated circuit device.

9 . The apparatus of claim 7 , further comprising at least one intermediate layer between the metal matrix composite layer and the integrated circuit device.

10 . The apparatus of claim 9 , wherein the at least one intermediate layer comprises an abrasion buffer.

11 . The apparatus of claim 9 , wherein the at least one intermediate layer comprises one of titanium, nickel, vanadium, gold, or nickel.

12 . The apparatus of claim 7 , further comprising:
an electronic board; and an integrated circuit assembly attached to the electronic board, the integrated circuit assembly comprising the at least one integrated circuit device and the metal matrix composite layer.

13 . An apparatus, comprising:
at least one integrated circuit device; an intermediate layer on the at least one integrated circuit device, the intermediate layer comprising one of titanium, nickel, vanadium, gold, or nickel and having a thickness in a range of 10 to 500 nanometers; and a metal matrix composite layer on the intermediate layer, wherein the metal matrix composite layer comprises:
a metal material; and
a filler material, wherein the filler material comprises a plurality of first filler material particles having an average diameter and an average distance from the at least one integrated circuit device and a plurality of second filler material particles having an average diameter and an average distance from the at least one integrated circuit device, wherein the plurality of first filler material particles and the plurality of second filler material particles each comprise one of diamond, aluminum nitride, or silicon carbide, wherein the average diameter of the plurality of first filler material particles is smaller than the average diameter of the plurality of second filler material particles, and wherein the average distance of the plurality of first filler material particles from the at least one integrated circuit device is smaller than the average distance of the plurality of second filler material particles from the at least one integrated circuit device.

14 . The apparatus of claim 13 , wherein the metal material comprises one of copper, aluminum, nickel, silver, or gold.

15 . The apparatus of claim 13 , wherein the plurality of first filler material particles and the plurality of second filler material particles each comprise diamond.

16 . The apparatus of claim 15 , wherein the metal material comprises silver.

17 . The apparatus of claim 13 , further comprising a plurality of intermediate filler material particles within the metal material, wherein the plurality of intermediate filler material particles has an average diameter that is larger than the average diameter of the plurality of first filler material particles and that is smaller than the average diameter of the plurality of second filler material particles, and wherein the plurality of intermediate filler material particles has an average distance from the at least one integrated circuit device that is greater than the average distance of the plurality of first filler material particles the at least one integrated circuit device and that is less than the average distance of the plurality of second filler material particles from the at least one integrated circuit device.

18 . The apparatus of claim 17 , wherein the plurality of intermediate filler material particles is the same material as the plurality of first filler material particles and the plurality of second filler material particles.

19 . The apparatus of claim 13 , wherein the intermediate layer comprises an abrasion buffer.

20 . The apparatus of claim 13 , further comprising:
an electronic board; and an integrated circuit assembly attached to the electronic board, the integrated circuit assembly comprising the at least one integrated circuit device, the intermediate layer, and the metal matrix composite layer.

Assignees

• Intel Corp

Inventors

• Eid Feras
• Li Wenhao
• Tomita Yoshihiro

Classifications

• H10W40/257 Primary

  having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh or porous structures (H10W40/254, H10W40/251 take precedence) · CPC title

• H10W40/254

  Diamond · CPC title

• H10W40/25

  characterised by their materials · CPC title

• H10W40/258 Primary

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H01L23/3733 Primary

  Electricity · mapped topic