Substrate processing method using low temperature developer and semiconductor device manufacturing apparatus using the same

Patent metadata

Field	Value
Publication number	US-12523935-B2
Application number	US-202117488456-A
Country	US
Kind code	B2
Filing date	Sep 29, 2021
Priority date	Apr 9, 2021
Publication date	Jan 13, 2026
Grant date	Jan 13, 2026

Abstract

A substrate processing method includes supplying a first developer at a first temperature onto a substrate in a development device, thereby performing a development process, supplying a process fluid at a second temperature lower than the first temperature onto the substrate, thereby replacing a residue of the first developer remaining after the development process with a second developer, transferring the substrate from the development device to a supercritical drying device, and supplying, by the supercritical drying device, at least one of a supercritical fluid and a subcritical fluid onto the substrate, thereby drying the second developer.

First claim

What is claimed is:

1 . A semiconductor device manufacturing apparatus comprising:
a development device configured to perform a development process for an exposed photoresist layer on a substrate; a supercritical drying device configured to dry the substrate using at least one of a supercritical fluid and a subcritical fluid; and a transfer robot configured to transfer the substrate from the development device to the supercritical drying device, wherein the development device comprises:
a chamber configured to receive the substrate;
a first tank configured to store at least a portion of a first developer provided from a first source storage, at a first temperature;
a second tank configured to store a second developer in which pressurized CO2 provided from a second source storage is dissolved in a portion of the first developer provided from the first source storage, at a second temperature lower than the first temperature;
a first fluid supplier interconnecting the first tank and the chamber; and
a second fluid supplier interconnecting the second tank and the chamber.

2 . The semiconductor device manufacturing apparatus according to claim 1 , further comprising:
a first low temperature device connected to the second tank.

3 . The semiconductor device manufacturing apparatus according to claim 2 , further comprising:
a second low temperature device connected to the second fluid supplier.

4 . The semiconductor device manufacturing apparatus according to claim 3 , wherein the first fluid supplier is configured to provide the first developer in the first tank onto the substrate in the chamber at the first temperature, thereby causing the development process to be performed.

5 . The semiconductor device manufacturing apparatus according to claim 4 , wherein the second fluid supplier is configured to provide the second developer in the second tank onto the substrate at the second temperature after the development process, thereby causing the first developer to be replaced with the second developer.

6 . The semiconductor device manufacturing apparatus according to claim 1 , wherein:
the first developer is n-butyl acetate; and the second developer is n-butyl acetate in which CO2 is dissolved.

7 . The semiconductor device manufacturing apparatus according to claim 1 , wherein the development device further comprises:
a first source supplier configured to supply the first developer in the first source storage to the first tank and the second tank; and a second source supplier configured to supply the pressurized CO2 in the second source storage to the second tank to thereby provide the second developer.

8 . A semiconductor device manufacturing apparatus comprising:
a development device to perform a development process for an exposed photoresist layer on a substrate; a supercritical drying device configured to dry the substrate through supply of at least one of a supercritical fluid and a subcritical fluid; and a transfer robot configured to transfer the substrate from the development device to the supercritical drying device, wherein the development device comprises:
a chamber configured to receive the substrate;
a first source storage configured to store a first developer;
a second source storage configured to store pressurized CO2;
a first tank configured to store the first developer at a first temperature;
a second tank configured to store a second developer at a second temperature;
a first source supplier interconnecting the first source storage and the first tank and supplying the first developer to the first tank;
a second source supplier interconnecting the second source storage and the second tank and supplying the pressurized CO2 to the second tank;
an intermediate supplier interconnecting the first tank and the second tank and supplying the first developer to the second tank, wherein the second developer is derived from the first developer and the pressurized CO2; and
a fluid supplier interconnecting the second tank and the chamber and supplying the second developer to the chamber.

9 . The semiconductor device manufacturing apparatus according to claim 8 , wherein the development device further comprises:
a first fluid supplier interconnecting the first source storage and the chamber and supplying the first developer to the chamber, wherein the fluid supplier interconnecting the second tank and the chamber and configured to supply the second developer to the chamber comprises a second fluid supplier.

10 . The semiconductor device manufacturing apparatus according to claim 8 , wherein the development device further comprises:
a first low temperature device connected to the first tank; and a second low temperature device connected to the second tank.

11 . The semiconductor device manufacturing apparatus according to claim 8 , wherein the second temperature is lower than the first temperature.

12 . The semiconductor device manufacturing apparatus according to claim 8 , wherein the intermediate supplier comprises a pump and an intermediate source line, and the pump is configured to pressurize the first developer flowing in the intermediate source line to the second tank.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Sangjine
• Jeong Jihoon
• Kim Younghoo
• Lee Kuntack

Classifications

• H10P72/7602

  the wafers being placed on a robot blade or gripped by a gripper for conveyance · CPC title

• H10P70/80

  Cleaning only by supercritical fluids · CPC title

• F26B5/005

  by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids (F26B3/005 takes precedence; using chemical vapours or gases F26B21/40) · CPC title

• G03F7/32

  Liquid compositions therefor, e.g. developers · CPC title

• G03F7/3021

  from a wafer supported on a rotating chuck · CPC title