Composition, resist underlayer film, method of forming film, method of producing patterned substrate, and compound

Patent metadata

Field	Value
Publication number	US-12517433-B2
Application number	US-202217689193-A
Country	US
Kind code	B2
Filing date	Mar 8, 2022
Priority date	Sep 17, 2019
Publication date	Jan 6, 2026
Grant date	Jan 6, 2026

Abstract

A composition includes: a compound including an aromatic hydrocarbon ring structure, and a partial structure represented by formula (1) which bonds to the aromatic hydrocarbon ring structure; and a solvent. The aromatic hydrocarbon ring structure has no fewer than 25 carbon atoms. In the formula (1), X represents a group represented by formula (i), (ii), (iii), or (iv); and *'s denote binding sites to two adjacent carbon atoms constituting the aromatic hydrocarbon ring structure. A method of producing a patterned substrate, includes applying the composition directly or indirectly on a substrate to form a resist underlayer film; forming a resist pattern directly or indirectly on the resist underlayer film; and carrying out etching using the resist pattern as a mask.

First claim

What is claimed is:

1 . A method of producing a patterned substrate, the method comprising:
applying a resist-underlayer-film-forming composition directly or indirectly on a substrate to form a resist underlayer film; forming a resist pattern directly or indirectly on the resist underlayer film; and etching the substrate and the resist underlayer film using the resist pattern as a mask, wherein the resist-underlayer-film-forming composition comprises:
a compound represented by at least one formula selected from the group consisting of formula (A1-1), formula (A1-2), formula (A1-3), formula (A1-4), formula (A1-5), formula (A1-6), formula (A1-7), and formula (A1-8); and
a solvent, wherein

wherein, in the formulae (A1-1) to (A1-8), X represents a group represented by formula (i), (ii), (iii), or (iv),

wherein,
in the formula (i), R 1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and R 2 represents a monovalent organic group having 1 to 20 carbon atoms,
in the formula (ii), R 3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and R 4 represents a monovalent organic group having 1 to 20 carbon atoms,
in the formula (iii), R 5 represents a monovalent organic group having 1 to 20 carbon atoms,
in the formula (iv), R 6 represents a monovalent organic group having 1 to 20 carbon atoms, and
the monovalent organic group having 1 to 20 carbon atoms represented by R 1 , R 2 , R 3 , R 4 , R 5 , or R 6 is represented by at least one formula selected from the group consisting of formula (x-1), formula (x-2), formula (x-3), formula (x-4), formula (x-5), formula (x-6), formula (x-7), formula (x-8), formula (x-9), formula (x-10), formula (x-11), and formula (x-12):

wherein ** denotes a site of bonding to the carbon atom or the nitrogen atom in the formula (i), (ii), (iii), or (iv).

2 . The method according to claim 1 , further comprising, before forming the resist pattern, forming a silicon-containing film directly or indirectly on the resist underlayer film such that the silicon-containing film is positioned between the resist underlayer film and the resist pattern,
wherein etching comprises etching the substrate, the resist underlayer film, and the silicon-containing film using the resist pattern as a mask.

3 . The method according to claim 1 , wherein the compound is represented by at least one formula selected from the group consisting of formula (A1-1), formula (A1-2), and formula (A1-3).

4 . The method according to claim 1 , wherein X represents a group represented by the formula (i) or (ii).

5 . The method according to claim 1 , wherein the compound is represented by at least one formula selected from the group consisting of formula (A1-1), formula (A1-2), and formula (A1-3), and X represents a group represented by the formula (i) or (ii).

6 . A composition comprising:
a compound represented by at least one formula selected from the group consisting of formula (A1-1), formula (A1-2), formula (A1-3), formula (A1-4), formula (A1-5), formula (A1-6), formula (A1-7), and formula (A1-8); and a solvent, wherein

wherein, in the formulae (A1-1) to (A1-8), X represents a group represented by formula (i) or (ii),

wherein,
in the formula (i), R 1 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and R 2 represents a monovalent organic group having 1 to 20 carbon atoms,
in the formula (ii), R 3 represents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; and R 4 represents a monovalent organic group having 1 to 20 carbon atoms,
and
the monovalent organic group having 1 to 20 carbon atoms represented by R 1 , R 2 , R 3 , or R 4 is represented by at least one formula selected from the group consisting of formula (x-1), formula (x-2), formula (x-3), formula (x-4), formula (x-5), formula (x-6), formula (x-7), formula (x-8), formula (x-9), formula (x-10), formula (x-11), and formula (x-12):

wherein ** denotes a site of bonding to the carbon atom or the nitrogen atom in the formula (i) or (ii).

7 . The composition according to claim 6 , wherein the compound is represented by at least one formula selected from the group consisting of formula (A1-1), formula (A1-2), and formula (A1-3).

8 . The composition according to claim 6 , which is suitable for forming a resist underlayer film.

9 . A resist underlayer film formed from the composition according to claim 6 .

10 . A method of forming a film, the method comprising:
applying the composition according to claim 6 directly or indirectly on a substrate; and drying the composition.

11 . A compound represented by at least one formula selected from the group consisting of formula (A2-1), formula (A2-2), formula (A2-3), formula (A2-4), formula (A2-5), formula (A2-6), formula (A2-7), and formula (A2-8):

wherein, in the formulae (A2-1) to (A2-8), Y represents a group represented by formula (v) or,

wherein,
in the formula (v), R 7 and R 8 each independently represent a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms,
and
the monovalent organic group having 1 to 20 carbon atoms represented by R 7 or R 8 is represented by at least one formula selected from the group consisting of formula (x-1), formula (x-2), formula (x-3), formula (x-4), formula (x-5), formula (x-6), formula (x-7), formula (x-8), formula (x-9), formula (x-10), formula (x-11), and formula (x-12):

wherein ** denotes a site of bonding to the carbon atom or the nitrogen atom in the formula (v).

12 . The compound according to claim 11 , wherein the compound is represented by at least one formula selected from the group consistin

Assignees

• Jsr Corp

Inventors

• Nosaka Naoya
• Abe Tsubasa
• Dobashi Masato
• Takanashi Kazunori

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• C07D317/50

  with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to atoms of the carbocyclic ring · CPC title

• C07D209/08 Primary

  with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to carbon atoms of the hetero ring · CPC title

• C07C69/616

  polycyclic · CPC title

• C07C13/66

  the condensed ring system contains only four rings · CPC title